• 제목/요약/키워드: semiconductor packaging

검색결과 268건 처리시간 0.02초

A Multi-Level Knowledge-Based Design System for Semiconductor Chip Encapsulation

  • Huh, Y.J.
    • 마이크로전자및패키징학회지
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    • 제9권1호
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    • pp.43-48
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    • 2002
  • Semiconductor chip encapsulation process is employed to protect the chip and to achieve optimal performance of the chip. Expert decision-making to obtain the appropriate package design or process conditions with high yields and high productivity is quite difficult. In this paper, an expert system for semiconductor chip encapsulation has been constructed which combines a knowledge-based system with CAE software.

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Current semiconductor Packaging in Japan

  • Nishi, Kunihiko
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 1999년도 1st Korea-Japan Advanced Semiconductor Packaging Technology Seminar
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    • pp.45-61
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    • 1999
  • General trend in electronics industry towards multimedia in the 21 century is presented here. All equipments require fast graphic processing together with thin and lightweight assembly technology. In Japan, CSP was developed and applied to mobile equipments for several years, and recently stacked die assembly technology is being developed. In addition, so-called flip chip technology is also being developed and which is applied to MCP and MCM little by little these days. Here current packaging technology in Japan is presented including above.

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Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술 (High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure)

  • 최진석;안성진
    • 마이크로전자및패키징학회지
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    • 제27권1호
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    • pp.1-7
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    • 2020
  • The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

A Case-based Decision Support Model for The Semiconductor Packaging Tasks

  • Shin, Kyung-shik;Yang, Yoon-ok;Kang, Hyeon-seok
    • 한국지능정보시스템학회:학술대회논문집
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    • 한국지능정보시스템학회 2001년도 The Pacific Aisan Confrence On Intelligent Systems 2001
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    • pp.224-229
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    • 2001
  • When a semiconductor package is assembled, various materials such as die attach adhesive, lead frame, EMC (Epoxy Molding Compound), and gold wire are used. For better preconditioning performance, the combination between the packaging materials by studying the compatibility of their properties as well as superior packaging material selection is important. But it is not an easy task to find proper packaging material sets, since a variety of factors like package design, substrate design, substrate size, substrate treatment, die size, die thickness, die passivation, and customer requirements should be considered. This research applies case-based reasoning(CBR) technique to solve this problem, utilizing prior cases that have been experienced. Our particular interests lie in building decision support model to aid the selection of proper die attach adhesive. The preliminary results show that this approach is promising.

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Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

  • Kang, Chae-Dong;Shin, Kye-Soo
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.178-181
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    • 2010
  • An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.