• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.62-68
• /
• 2019

The optoelectronic display units such as TFT-LCD or OLED require many thin optical plastic films and their mass manufacturing processes employ CO2 laser cutting of those thin films in a large quantity. However, laser film cutting could generate fume particles through melt shearing, vaporization, and chemical degradation and those particles could be of great concern for film surface contamination. In order to appreciate the fume particle dispersion behaviors in laser film cutting, this study relies on random particle simulations by probabilistic distributions of particle size, ejection velocity and angles coupled with Basset-Boussinesq-Oseen model of particle trajectory in low Reynolds number flows. Here, up to one million particles of random sampling have been tested to effectively show fume particles dispersed on the film surface. The computational results could show that particular range of fume particle size could easily disperse into the pixel region of processed optical films.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.4
• /
• pp.51-58
• /
• 2020

Many types of optical plastic films are essential in optoelectronics display unit fabrication and it is important to develop high precision laser cutting methods of optical films with extremely low level of film surface contamination by fume particles. This study investigates the effects of suction and blowing air motions with air flow misalignment in removing fume particles from laser cut line by employing random particle trajectory simulation and probabilistic particle generation model. The computational results show fume particle dispersion behaviors on optical film under suction and blowing air flow conditions. It is found that suction air flow motion is more advantageous to blowing air motion in reducing film surface contamination outside designated target margin from laser cut line. While air flow misalignment adversely affects particle dispersion in blowing air flows, its effects become much more complicated in suction air flows by showing different particle dispersion patterns around laser cut line. It is required to have more careful air flow alignment in fume particle removal under suction air flow conditions.

• Electronics and Telecommunications Trends
• /
• v.36 no.3
• /
• pp.23-33
• /
• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.4
• /
• pp.131-138
• /
• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.9
• /
• pp.36-45
• /
• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• Advances in aircraft and spacecraft science
• /
• v.7 no.1
• /
• pp.41-52
• /
• 2020

The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.217-221
• /
• 2004

[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2007.06a
• /
• pp.94-98
• /
• 2007

AC PDP에 사용되는 ITO 전극의 공정시간을 단축시키고 생산성을 향상시키기 위해서 $Nd:YVO_4$ laser(${\lambda}=1064\;nm$)를 사용하여 ITO 전극 패턴을 형성하였다. ITO etchant를 사용하여 ITO 전극 패턴을 형성한 샘플과 비교해서 laser를 사용하여 제작한 샘플은 ITO 라인 가장자리에 shoulder와 물결무늬를 형성했다. Q스위치 $Nd:YVO_4$ laser와 갈바노메트릭 스캐닝 시스템을 사용하여 500 mm/s의 스캔속도와 40 kHz의 펄스 반복 율을 기본조건으로 결정했다. PDP 테스트 샘플을 제작하여 방전 테스트를 진행하였다. 사진식각공정을 이용하여 만든 PDP 샘플과 비교해서 laser를 이용하여 제작한 PDP 샘플의 최소 방전유지전압은 더 높게 측정됐다. 이것은 ITO 라인의 shoulder와 물결무늬의 형성과 관련이 있다고 판단된다. 본 실험을 통해 레이저를 이용한 PDP용 ITO 전극막의 직접 패터닝 가능성을 확인할 수 있었다.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2003.11a
• /
• pp.841-844
• /
• 2003

In the semiconductor and the optical industry a new transport system which can replace the conventional sliding system is required. These systems are driven by magnetic field and conveyer belt. The magnetic field damages semiconductor and contact force scratches the optical lens. The ultrasonic wave driven system can solve these problem. In this paper, the vibration behavior of flexural beam in the ultrasonic transport system is verified using Laser Scanning Vibrometer. The experiments for verifying vibration are performed in three conditions such as in the maximum transport speed, in the zero speed, and in the change of transport direction.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.1
• /
• pp.7-11
• /
• 2012

One dimensional and two dimensional nano patterns were fabricated on a 4-inch substrate by Laser Interference Lithography (LIL). Mach-Zehnder interferometer was setup to obtain the interference patterns and adjusted the pattern sizes with change of incident angle. We could obtain a periodic structure with a period of 440 nm using 266 nm laser, and demonstrated a pattern size with $293{\pm}25nm$ over a 4-inch substrate.