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http://dx.doi.org/10.12989/aas.2020.7.1.041

Photo-thermo-elastic interaction in a semiconductor material with two relaxation times by a focused laser beam  

Jahangir, A. (Department of Mathematics, COMSATS University Islamabad)
Tanvir, F. (Department of Mathematics, COMSATS University Islamabad)
Zenkour, A.M. (Department of Mathematics, Faculty of Science, King Abdulaziz University)
Publication Information
Advances in aircraft and spacecraft science / v.7, no.1, 2020 , pp. 41-52 More about this Journal
Abstract
The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.
Keywords
semiconductor material; eigen value approach; elastic waves; focused laser beam; generalized thermoelastic theories;
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