• Journal of Surface Science and Engineering
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• v.41 no.1
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• pp.38-42
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• 2008

316L stainless steel welding tube was electrolytically polished and the inner surface characteristics of the tube were tested. Electro-polishing variables such as current, voltage, concentration of electrolyte and electropolishing time were changed to seek for optimum condition. These makes a optimum conditions for the electro-polishing as 4000 A, 9 V, 1.7 specific gravity of electrolyte, and 30 minute of electro-polishing time. It makes the surface roughness as Ra < $0.25{\mu}m$. XPS test resulted as the ratio of CrO/FeO equals or more to 3/1. AES test resulted as the thickness of CrO film of $38{\AA}$. DTA test resulted as the tube did not react with $N_2,\;H_2\;and\;O_2$ gas below 1073K. As summarize above results, the electro- polished 316L stainless steel welding tube satisfied the conditions to apply as a pipeline for semi- conductor production facility and clean room.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.3
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• pp.573-580
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• 2024

Recently, the special alloy, for instance, such as Monel and Inconel, is used for valves, bolt/nuts, and fittings in semiconductor facility, FCEV(fuel cell electric vehicle) and hydrogen gas station, to reduce the hydrogen embrittlement. Even though the Monel material has high cost, it is recommended to use for the cases of ultra high pressure, ultra high leak-proof and so on. The purpose of this study is to investigate the characteristics of Monel material within elastic limit through the comparative analysis when Monel material is extruded or drawn. As the results, the deformation of Monel material was increased as the number of pass was increased, further, the deformation of Monel material by drawing was larger than that by extrusion. In the safety factor, the case that load is less than 420kN, the plastic deformation due to drawing could be happened faster than that due to extrusion. However, the case of more than 420kN, it showed that the plastic deformation for extrusion and drawing was almost similar.

• Journal of Practical Engineering Education
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• v.15 no.1
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• pp.209-221
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• 2023

In the external inspection and packaging stages of products used in the semiconductor manufacturing process, there is a problem in which particles are adsorbed to the product itself or a carrying tool due to electrostatic discharge. This study presents a methodology that can improve the problem of adsorption of particles to a product by using a practical TRIZ technique. By applying the proposed practical TRIZ-based methodology, the problem was defined, and contradictions caused by product waiting time were derived. Among the derived contradictions, physical contradictions were set and the concept of 'space separation' was applied to derive solutions such as 'installation of Ionizer' and 'improvement of the layout of the workroom'. As a result of the experiment by applying 'Ionizer Installation' and 'Workroom Layout Improvement' derived through the application of practical TRIZ, it was confirmed that the particle adsorption problem that occurs during the waiting time of the product can be solved.Through this study, it is expected that workers, facility engineers, and technical engineers working at manufacturing processes will be able to effectively solve the problems they face through creative thinking and change of ideas by using practical TRIZ techniques, and contribute to innovative technology development and productivity improvement.

• Journal of Space Technology and Applications
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• v.3 no.4
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• pp.333-341
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• 2023

This study aims to develop technology for testing and verifying the space radiation environment of miniature space components using the facilities of the domestic 100 MeV proton accelerator and the Space Component Test Facility at the Space Testing Center. As advancements in space development progress, high-performance satellites increasingly rely on densely integrated circuits, particularly in core components components like memory. The application of semiconductor components in essential devices such as solar panels, optical sensors, and opto-electronics is also on the rise. To apply these technologies in space, it is imperative to undergo space environment testing, with the most critical aspect being the evaluation and testing of space components in high-energy radiation environments. Therefore, the Space Testing Center at the Korea testing laboratory has developed a radiation testing device for memory components and conducted radiation impact assessment tests using it. The investigation was carried out using 100 MeV protons at a low flux level achievable at the Gyeongju Proton Accelerator. Through these tests, single event upsets observed in memory semiconductor components were confirmed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.650-656
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• 2018

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Journal of Korean Society of Environmental Engineers
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• v.32 no.1
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• pp.17-22
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• 2010

The aim of this study is to research applicable possibility of DSI (Dry Sorbent Injection) technique in $SO_2$ removal process using lab-scale facility based on 500MW in capacity coal-fired thermal power plant operated by South Korea N. Power Co., Ltd. To increase the $SO_2$ removal efficiency, it is considered the mixing enhancement as different shapes called lobed-plate and stepplate tested ultimately for optimum shape. Also it tested to analysis $SO_2$ removal efficiency by numbers of injection holes. At experimental it showed the $SO_2$ removal efficiency is higher using mixing enhancement than not installed mixing enhancement and case on the step-plate was shown the most $SO_2$ removal efficiency. Also, $SO_2$ removal efficiency was higher recording which will increase the injection holes case on not installed mixing enhancement. But, the $SO_2$ removal efficiency was higher 4 injection holes case on installed mixing enhancement.

• Journal of Korea Spatial Information System Society
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• v.11 no.3
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• pp.31-39
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• 2009

Requirement level regarding processing and managing real-time datastream in an ubiquitous environment is increased. Especially, due to the unbounded, high frequency and real-time characteristics of datastream, development of specialized stroge manager for DSMS is necessary to process such datastream. Existing DSMS, e.g. Coral8, can support datastream processing but it is not scalable and cannot perform well when handling large-volume real-time datastream, e.g. 100 thousand over per second. In the case of Oracle10g, which is generally used in related field, it supports storing and management processing. However, it does not support real-time datastream processing. In this paper, we propose specialized storage manager of DSMS for real-time compressed storing on semiconductor or LCD production facility of Samsung electronics, Hynix and HP. Hynix and HP. This paper describes the proposed system architecture and major components and show better performance of the proposed system compared with similar systems in the experiment section.