• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.37-41
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• 2017

Cuprous oxide ($Cu_2O$) is one of the potential candidates as an absorber layer in ultra-low-cost solar cells. $Cu_2O$ is highly desirable semiconducting oxide material for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and high absorption coefficient that absorbs visible light of wavelength up to 650 nm. In addition, $Cu_2O$ has other several advantages such as non-toxicity, low cost and also can be prepared with simple and cheap methods on large scale. In this work, we deposited the $Cu_2O$ thin films by electrodeposition on gold coated $SiO_2/Si$ wafers. We changed the process conditions such as pH of the solution, applied potential on working electrode, and solution temperature. Finally, we confirmed the structural properties of the thin films by XRD and SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.642-647
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• 2015

The perovskite solid solutions of the $Sr_{1-x}Mg_xFe{^{3+}}_{1-{\tau}}Fe{^{4+}}_{\tau}O_{3-y}$ system (x=0.0, 0.1, 0.2, and 0.3) were synthesized in $N_2$ at $1,150^{\circ}C$. X-ray powder diffraction study assured that all the four samples had cubic symmetries(SM-0: $3.865{\AA}$, SM-1: $3.849{\AA}$, SM-2: $3.833{\AA}$, and SM-3: $3.820{\AA}$) and that the lattice volumes decreased steadily from $57.7{\AA}^3$ to $55.7{\AA}^3$ with x values. The nonstoichiometric chemical formulas were determined by Mohr salt analysis and with the increase of x values the amounts of $Fe^{4+}$ ion and oxygen were decreased simultaneously. Thermal analysis showed that SM-0 started to lose its oxygen at $450^{\circ}C$ and SM-1, Sm-2, and SM-3 began to lose their oxygen at around $350{\sim}400^{\circ}C$. SM-0 showed almost reversible weight change in the cooling process. All the samples exhibited semiconducting behaviors in the temperature range of $10{\sim}400^{\circ}C$. Conductivities of the 4 samples were decreased in the order of SM-0, SM-1, SM-2, and SM-3 at constant temperature. The activation energies of the conductions were in the range of 0.176 eV~0.244 eV.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.693-696
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• 2006

In this study, we made the system to measure variation of blood flow using bio-electrical impedance analysis method. The system, which could measure variation of impedance according to pressure change by artificial pressure, consists of pressure measurement and impedance measurement by 4-electrode method. Pressure measurement splits into semiconducting pressure sensor and electronic circuit for processing output signal. In addition, impedance measurement splits into constant current source circuit and lock-in amplifier for detection impedance signal. We experimented feature of impedance measurement using standard resistance to evaluate the system characteristic. As well as, we experimented to estimate variation of blood flow by measuring impedance and blood flow resistance ratio using mean arterial pressure and variation of blood flow with experimental group. As result of this study, blood flow resistance ratio and variation of blood flow were definitely in inverse proportion and were -0.96776 as correlation coefficient by correlation analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.198-203
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• 2013

Dye-sensitized solar cells (DSSCs) based on titanium dioxide ($TiO_2$) have been extensively studied because of their promising low-cost alternatives to conventional semiconductor based solar cells. DSSCs consist of molecular dye at the interface between a liquid electrolyte and a mesoporous wide-bandgap semiconductor oxide. Most efforts for high conversion efficiencies have focused on dye and liquid electrolytes. However, interface engineering between dye and electrode is also important to reduce recombination and improve efficiency. In this work, for interface engineering, we deposited semiconducting ferroelectric $BiFeO_3$ with bandgap of 2.8 eV on $TiO_2$ nanoparticles and nanotubes. Photovoltaic properties of DSSCs were characterized as a function of thickness of $BiFeO_3$. We showed that ferroelectric $BiFeO_3$-coated $TiO_2$ electrodes enable to increase overall efficiency of DSSCs, which was associated with efficient electron transport due to internal electric field originating from electric polarization. It was suggested that engineering the dye-$TiO_2$ interface using ferroelectric materials as inorganic modifiers can be key parameter for enhanced photovoltaic performance of the cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.297.2-297.2
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• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.132-136
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• 2001

Iron- silicide has been produced by mechanical alloying process and consolidated by hot pressing. As-consolidated iron silicides were consisted of $\beta$-FeSi$_2$ phase, and untransformed mixture of $\alpha$-$Fe_2Si_5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting $\beta$-$FeSi_2$ phase. The condition for $\beta$-FeSi$_2$ transformation was investigated by utilizing DTA, SEM, TEM and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at $830^{\circ}C$ for 24 hours. The mechanical and thermoelectric properties of $\beta$-FeSi$_2$ materials before and after isothermal annealing were characterized in this study.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.137-141
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• 2010

The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.399-405
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• 2018

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.