• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.2 s.245
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• pp.179-186
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• 2006

Dielectrophoresis has received considerable attention for separating nanotubes according to electronic types. Here we examine the effects of surface conductivity of semiconducting single-walled carbon nanotubes (SWNT), induced by ionic surfactants, on the sign of dielectrophoretic force. The crossover frequency of semiconducting SWNT increases rapidly as the conductivity ratio between the particle and medium increases, leading to an incomplete separation of ionic surfactant suspended SWNT at an electric field frequency of 10 MHz. The surface charge of SWNT is neutralized by an equimolar mixture of anionic surfactant sodium dodecyl sulfate (SDS) and cationic surfactant cetyltrimenthylammonium bromide (CTAB), resulting in negative dielectrophoresis of semiconducting species at 10 MHz. A comparative Raman spectroscopy study shows a nearly complete separation of metallic SWNT.

• 전기의세계
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• v.26 no.1
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• pp.82-86
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• 1977

Semiconducting Barium Titanate shows resistivity anomaly near the transition temperature 120.deg. C. Its transition temperature decreases about 6-7.deg. C per 1 mole % SnO$_{2}$, which is likely to compose (BaSb) (TiSn) $O_{3}$ structure by making Sn$^{+4}$ ions occupy Ti$^{+4}$ ion sites. Grain boundories, whose existance is the cause of having high resistivity in Semiconducting BaTiO$_{3}$ disappear due to the spontaneous polarization below the transition temperature, and it is believed that the phase transition makes semiconducting BaTiO$_{3}$ have resistivity anomaly at certain temperature. Temperature and frequency dependencies of resistivity are also investigated for practical application.ion.

• Korea-Australia Rheology Journal
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• v.13 no.4
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• pp.197-203
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• 2001

We reported on the eletrorheological (ER) properties of several semiconducting polymers including poly (p-phenylene) (PPP), poly (acene quinone) radicals (PAQRs), microencapsulated polyaniline (MPANI) and polyaniline (PANI) those we synthesized. The yield stress dependence on electric field strength for the ER fluids using these semiconducting polymers was mainly examined. The yield stress, which is an important design parameter for ER fluids, was observed to satisfy a universal scaling function, allowing that yield stress data for all the ER fluids examined in this study collapse onto a single curve for a broad range of electric field strengths. The proposed scaling function incorporates both the polarization and conductivity models.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.1-20
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• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• Carbon letters
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• v.9 no.1
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• pp.17-22
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• 2008

A carbon nanotube (CNT) of diameter ~20 nm has been synthesized by spray pyrolysis of turpentine oil using Ni/Fe catalyst. Pellet of CNTs has been used as a target to produce semiconducting carbon thin film of band gap 1.4 eV. Presence of oxygen pressure in the pulse laser deposition (PLD) chamber helped to control the $sp^3/sp^2$ ratio to achieve the desired band gap. Results are discussed with the help of Raman spectra, SEM TEM micrographs and optical measurements suggest that semiconducting carbon thin film deposited by PLD technique has retained its nanotubes structure except that its diameter has increased from 20 nm to 150 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.441-444
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• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.249-256
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• 2020

As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.218-219
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• 2006

To Smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black and Carbon Nanotube. Then they were produced as sheets after pressing for 20 minutes at $180^[{\circ}C]$ with a pressure of $200[kg/cm^2]$. The content of conductive carbon black and Carbon Nanotube was the variable, and their contents were 20-40[wt%] and 2-6[wt%] respectively. The smoothness was measured by JSM-6400.