• 전자공학회논문지
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• 제52권10호
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• pp.64-69
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• 2015

본 연구에서는 실제적 구조를 가지는 bulk와 SOI FinFET에서의 self-heating 효과를 3차원 TCAD 전산모사를 통하여 분석하였다. 기존 연구들에서와 마찬가지로 self-heating 효과에 의해 나타나는 정적인 구동전류의 감소는 SOI FinFET에서 bulk FinFET보다 더 심각함을 보여주고 있다.. 그러나 고속의 logic 동작 및 실제적 구조를 감안하면 SOI FinFET에서의 동적 self-heating 효과는 bulk FinFET과 큰 차이가 없음을 강조한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.204-209
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• 2016

The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.255-258
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• 2009

Leading developed countries have studied energy self-sufficient houses such as zero or low energy buildings to reduce energy consumption for buildings since the early 1990s. Moreover, some developed countries have actually constructed self-sufficient houses and operated them for demonstration, expanding use of such houses. Korea has also established Zero Energy Solar House(ZeSH) and studied energy independence. Therefore, this study analyzed research result regarding ZeSH, self-sufficient energy house hold of Korea, found out technologies used for heating energy independence, used building interpretation program(ESP_r) to evaluate performance of each factors and analyzed energy reduction quantitatively. Results from the research are as follows: Reduction rate of actual detached house's heating load was also analyzed quantitatively depending on application of each technology. When each factor was applied step-by-step, annual reduction rate of heating load depending on increase in insulation thickness reached 6.6~22.2 %. Annual reduction rate of heating load depending on increase insulation thickness, and change in window heating performance and area ratio reached 31.5 %. Annual reduction rate of heating load through high-sealing and high-insulation depending on change in leakage rate reached 40.0~88.9 %. Annual reduction of heating load, when Mass Wall and attached sun space was applied were applied reached 28.5~39.2 %, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1065-1070
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• 2007

The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.505-508
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• 2006

Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.

• 반도체디스플레이기술학회지
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• 제3권4호
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• pp.29-32
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• 2004

Fully depleted Silicon-on-Insulator (FD-SOI) devices lead to better electrical characteristics than bulk CMOS devices. However, the presence of a thin top silicon layer and a buried SiO2 layer causes self-heating due to the low thermal conductivity of the buried oxide. The electrical characteristics of FDSOI devices strongly depend on the path of heat dissipation. In this paper, we present a new three-dimensional (3-D) analysis technique for the self-heating effect of the finger-type and bar-type transistors. The 3-D analysis results show that the drain current of the finger-type transistor is 14.7% smaller than that of the bar-type transistor due to the 3-D self-heating effect. We have learned that the rate of current degradation increases significantly when the width of a transistor is smaller that a critical value in a finger-type layout. The current degradation fro the 3-D structures of the finger-type and bar-type transistors is investigated and the design issues are also discussed.

• 센서학회지
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• 제29권4호
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• pp.220-226
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• 2020

Graphene has been widely considered a promising candidate for high-quality chemical sensors, owing to its outstanding characteristics, such as sensitive gas adsorption at room temperature, high conductivity, high flexibility, and high transparency. However, the main drawback of a graphene-based gas sensor is the necessity for external heaters due to its slow response, incomplete recovery, and low selectivity at room temperature. Conventional heating devices have limitations such as large volume, thermal safety issues, and high power consumption. Moreover, metal-based heating systems cannot be applied to transparent and flexible devices. Thus, to solve this problem, a method of supplying the thermal energy necessary for gas sensing via the self-heating of graphene by utilizing its high carrier mobility has been studied. Herein, we provide a brief review of recent studies on self-activated graphene-based gas sensors. This review also describes various strategies for the self-activation of graphene sensors and the enhancement of their sensing properties.

• 한국화재소방학회논문지
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• 제30권4호
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• pp.73-81
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• 2016

정온전선은 평형 도체 사이에 반도전성 폴리머를 연속 압출 방식으로 충전시킨 후 양 도체 사이에 전기를 흐르게 함으로써 고분자에 의한 전열을 이용한 전기 발열체이다. 정온전선은 가격이 저렴하고 시공이 편리하기 때문에 겨울철 수배관의 동파방지용 열선으로 주로 사용되고 있다. 하지만 이러한 유용함에도 불구하고 구조적인 문제로 인하여 두 평형 도체의 절연이 파괴되는 경우에는 화재로 이어질 수도 있는 위험성이 존재하고 있다. 본 논문은 정온전선에 의한 화재현장을 조사하여 원인을 도출하는 방식으로 직접적인 원인을 추론하고자 하였으며, 결함수 분석을 통해 근본적인 문제를 파악해 보고자 하였다. 실제 냉동창고 화재현장을 조사하여 정온전선에 의한 화재원인을 추론한 결과 전선 말단 절연처리 결함에 의한 절연파괴인 것으로 판단되었다. 향후 이 결과는 안전활동 및 유사 화재원인조사 시에도 활용될 수 있을 것이다

• Progress in Superconductivity
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• 제9권1호
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• pp.18-22
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• 2007

For interlayer tunneling spectroscopy using a small stack of $Bi_2Sr_2CaCu_2O_{8+x}$ (Bi-2212) intrinsic junctions in a high-bias range, large self-heating takes place due to the poor thermal conductivity of Bi-2212. In this study, we numerically estimate the self-heating around a Bi-2212 sample stack for I-V or dI/dV-V measurements. Our results show that the temperature discrepancy between the Bi-2212 sample stack and top Au electrodes due to bias-induced self-heating is small enough along the c-axis direction of Bi-2212. On the other hand, the lateral temperature discrepancy between the sample stack and the Bi-2212 on-chip thermometer stack can be as large as ${\sim}20\;K$ for the highest bias required to observe the pseudogap hump structure. We thus suggest a new in-situ ac thermometry, employing the Au current-bias electrode itself deposited on top of the sample stack as the resistive thermometer layer, which is supposed to allow safe temperature measurements for the interlayer tunneling spectroscopy.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2016년도 추계 학술논문 발표대회
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• pp.152-153
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• 2016

In this research, we evaluate the performance for preventing frost damage at early age of mortar using variable cement and self-heating binder. Purpose of final research is preventing freezing and thawing by making the compressive strength 5MPa in 3days below zero temperature without heat curing. We compare the compressive strength of mortar and concrete using variable cements and self-heating binder in low temperature.