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http://dx.doi.org/10.5573/ieie.2015.52.10.064

Dynamic Self-Heating Effects of Bulk and SOI FinFET with Realistic Device Structure  

Ryu, Heesang (Department of Electronics and Information Engineering, Korea University)
Chung, Hayun Cecillia (Department of Electronics and Information Engineering, Korea University)
Yang, Ji-Woon (Department of Electronics and Information Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.10, 2015 , pp. 64-69 More about this Journal
Abstract
Self-heating effects of bulk and SOI FinFETs on device structure are examined with TCAD simulation. The degradation of drive current in SOI FinFET is severer than that of bulk one in steady-state condition as expected. However, it is shown that the dynamic self-heating effects of SOI FinFETs are comparable to those of bulk FinFETs for high speed logic operation, especially in realistic device structure.
Keywords
TCAD simulation; SOI; FinFET; dynamic; self-heating effects;
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1 L. T. Su, J. E. Chung, D. A. Antoniadis, K. E. Goodson, and M. I. Flik, "Measurement and modeling of self-heating in SOI nMOSFET's," IEEE Trans. Electron Devices, vol. 41, no. 1, pp. 69-75, Jan. 1994.   DOI   ScienceOn
2 S. Cho, J. S. Lee, K. R. Kim, B. G. Park, J. S. Harris, and I. M. Kang, "Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4164-4171, Dec. 2011.   DOI   ScienceOn
3 Makovejev, Sergej, Sarah Olsen, and J. Raskin. "RF extraction of self-heating effects in FinFETs." IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3335-3341, Oct. 2011.   DOI   ScienceOn
4 M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, and C. Fiegna, "Simulation of self-heating effects in different SOI MOS architectures," Solid State Electron., vol. 53, no. 4, pp. 445-451, Apr. 2009.   DOI   ScienceOn
5 C. Fiegna, Y. Yang, E. Sangiorgi, and A. G. O'Neill, "Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation," IEEE Trans. Electron Devices, vol. 55, no.1, pp. 233-244, Jan. 2008.   DOI   ScienceOn
6 M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, and C. Fiegna, "Simulation of self-heating effects in 30nm gate length FinFET," in Proc. Int. Conf. ULIS, pp. 71-74, 2008.
7 Shrivastava, Mayank, et al. "Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architectures." IEEE Trans. Electron Devices, vol. 59, no. 5, pp.1353-1363, May 2012   DOI   ScienceOn
8 Sentaurus Device User Guide, Ver. C-2009.06, Synopsis.
9 S. Makovejev, S. H. Olsen, V. Kilchytska, and J.-P. Raskin, "Time and Frequency Domain Characterization of Transistor Self-Heating," IEEE Trans. Electron Devices, vol. 60, no. 6, pp. 1844-1851, 2013.   DOI   ScienceOn
10 A. J. Scholten, G. D. J. Smit, R. M. T. Pijper, L. F. Tiemeijer, H. P. Tuinhout, J.-L. P. J. van der Steen, A. Mercha, M. Braccioli, and D. B. M. Klaassen, "Experimental assessment of self-heating in SOI FinFETs," in IEDM Tech. Dig., 2009, pp. 305-308.
11 T. Takahashi, N. Beppu, K. Chen, S. Oda, and K. Uchida, "Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability," Tech. Dig. IEDM, pp. 177-180, 2011.
12 Pop, Eric, Sanjiv Sinha, and Kenneth E. Goodson, "Heat Generation and Transport in Nanometer - Scale Transistors," Proceedings of the IEEE, vol. 94, no. 8, pp. 1587-1601, Aug. 2006.   DOI   ScienceOn