• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.287-294
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• 1996

An optical phase modulator is fabricated in GaAs/AlGaAs doble heterostructure wafer grown by MOCVD. A self-aligned process, in which the same photoresist pattern is used for both the waveguide etching and the insulation layer formation, is developed and is found to be very useful, Fabry-Perot interference technique is applied to the measurement and the phase modulation efficiency is measured to be 22.5$^{\circ}$/Vmm at 1.31 ${\mu}{\textrm}{m}$ for TE polarization.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.655-658
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• 1989

The characteristics of proton-diffused $LiNbO_3$ optical waveguides with self-aligned $SiO_2$-cladding are reported. When the proton diffusion occurs, the $SiO_2$-cladding limits the lateral diffusion of protons by out-diffusion of protons in unclad region. Proton indiffusion in depth direction is promoted by inhibition of out-diffusion in clad region. Consequently, the mode profile in depth direction can be nealy symmetric. The extent of the proton exchange was observed by measuring the infrared absorption peak at about $3500cm^{-1}$. It is confirmed that proton diffusion with $SiO_2$-cladding has structural excellency.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.38-48
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• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• ETRI Journal
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• v.10 no.1
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• pp.64-75
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• 1988

GaAs 등 화합물 반도체는 그 표면구조가 아직 확립되어 있지 않고, 표면조건이 소자특성에 큰 영향을 미친다. 소자공정중 이온주입 공정은 self-aligned MESFET(Metal Semiconductor Field Effect Transistor) 제작에 필수적인 기술이나, 이온 주입시 수 $\AA$ 크기의 vacancy 등 격자결함이 발생하며 이들 결함을 제어할 수 있는 기술이 필요하다. 에너지 가변 양전자 소멸기술은 표면에서 $1\mum$정도내에 존재하는 vacancy 형태의 격자결함을 감지해 낼 수 있으며 이들 격자결함의 depth profiling을 할 수 있는 기술이다. 본 고에서는 에너지 가변 양전자 소멸기술의 원리 및 최근 연구결과에 대해서 살펴보기로 한다.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.264-268
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• 1990

A guided-wave electro-optic Mach-Zehnder interferometric modulator was fabricated on X-cut LiNbO3 . The channel waveguides were formed by proton diffusion with self-aligned SiO2-cladding. A mach-Zehnder interferometric modulator with arm lengths of 7mm has been fabricated and tested at 0.6328${\mu}{\textrm}{m}$. Its modulation depth with V$\pi$ of only 3.5V was 85% and the 3dB bandwidth was 1.6KHz. For high speed operation, the electrode dimension should be reduced to have smaller R, L, and C.

• Journal of the Institute of Convergence Signal Processing
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• v.22 no.3
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• pp.104-109
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• 2021

In this paper, we experimentally demonstrate a self-seeding FP-LD (Fabry Perot Laser Diode) to verify the possibility of a new tunable light source that can be used in WDM-PON (Wavelength Division Multiplexing - Passive Optical Network) system. The conventional implementation of WDM-PON using a tunable light source has a disadvantage that the center wavelength of the AWG (Arrayed Waveguide Grating) device and the tunable light source must be precisely aligned. However, the proposed tunable light source has the advantage that the tunable wavelength is automatically aligned with the center wavelength of the AWG as well as simple structure. The implemented tunable light source had a tunable band of about 14 nm or more, and the maximum RIN (Relative Intensity Noise) of about -124 dB/Hz, which showed the possibility of modulating 10 Gb/s signal by an external modulator.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.50-54
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• 2007

Nickel nano and microstructures are fabricated with simple process. The fabrication process consists of nickel deposition, lithography, nickel ion etching and plasma ashing. Well-aligned nickel nanowalls and nickel self-encapsulated microchannels were fabricated. We found that the ion etching condition as a key fabrication process of nickel nanowalls and self-encapsulated microchannels, i.e., 40 sccm Ar flow, 550 W RF power, 15 mTorr working pressure, and $20^{\circ}C$ water cooled platen without using He backside cooling unit and with using it, respectively. We present the experimental results and discuss the formational conditions and the effect of nickel redeposition on the fabrication of nickel nano and microstructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.536-540
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• 2004

A novel nematic liquid crystal (LC) cell with splay structure exhibiting wide viewing angle, fast response time and high transmittance at the same time has been developed. With rubbed homeotropic alignment in parallel directions, the device shows bend alignment in the absence of vertical electric field. However, with applied high voltage in a pulse form, the LC shows a optically compensated splay (OCS) orientation such that the mid-director is parallel to a substrate and at both surfaces the LCs are aligned vertically in parallel direction. In the device, the birefringence of the cell becomes tunable with applying voltage, i.e., the amount of light passed through the cell can be controlled by controlling the orientation of the LC. Since the OCS cell has a self-compensation structure such that the LC has a mirror symmetry along the mid-director, the device shows a wide viewing angle with only a single domain and a fast response time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.46-54
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• 2007

We have fabricated and characterized MMI (Multimode Interference) coupled ring resonator with the total internal reflection mirrors and the semiconductor optical amplifier for the integration of the WDM (Wavelength Division Multiplexing) system. The TIR (Total Internal Reflection) mirrors were fabricated by self-aligned process and had losses of about 0.71 dB per mirror. Coupling in and out of a resonator was achieved using the extremely small MMI couplers. The MMI length and width used in the experiment were $119{\mu}m$ and $9{\mu}m$, respectively. The resulting FSR (Free Spectral Range) and on-off ratio were approximately 1.333 nm (162 GHz) and 13 dB, respectively.