• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.44-48
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• 2009

The effect of temperature gradient between the substrate and ambient gas on the structural characteristics of GaN nanorods grown on r-plane sapphire substrates by hydride vapor phase epitaxy was investigated. The density, diameter, and length strongly depended on the tempearture gradient. In addition, the cross-sectional shape of the nanorrods at the end of growth was found to be more dependedent on the temperature of a substrate itself than the temperature gradient.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.70-73
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• 2015

Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.36-39
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• 2018

Transparent olivine $LiNiPO_4$ thin films on sapphire substrates were fabricated by radio frequency (RF) magnetron sputtering. The X-ray diffraction patterns show these thin films have the phase of $LiNiPO_4$ with an ordered olivine structure indexed to the orthorhombic Pmna space group. $LiNiPO_4$ thin films deposited on sapphire substrates exhibit transmittance of about 83 %. It was confirmed that the $LiNiPO_4$ thin film exhibits a high potential of 5 V-class.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.37-39
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• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.57-57
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• 2005

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.72-73
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.101-102
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• 1998

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.