• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.31-38
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• 2015

In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.

• Corrosion Science and Technology
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• v.22 no.4
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• pp.257-264
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• 2023

Ti-6Al-4V alloys are mainly used as dental materials due to their excellent biocompatibility, corrosion resistance, and chemical stability. However, they have a low bioactivity with bioinertness in the body. Therefore, they could not directly bond with human bone. To improve their applications, their bone bonding ability and bone formation capacity should be improved. Thus, the objective of this study was to improve the bioinert surface of titanium alloy substrate to show bioactive characteristics by performing surface modification using wollastonite powder. Commercial bioactive wollastonite powder was successfully deposited onto Ti-6Al-4V alloy using a room temperature spray process. It was found that wollastonite-coated layer showed homogeneous microstructure and uniform thickness. Corrosion resistance of Ti-6Al-4V alloy was also improved by plasma electrolytic oxidation treatment. Its wettability and bioactivity were also greatly increased by wollastonite coating. Results of this study indicate that both plasma electrolytic oxidation treatment and wollastonite coating by room temperature spray process could be used to improve surface bioactivity of Ti-6Al-4V alloy substrate.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.665-670
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• 2000

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si$\mid$$\mid$Si and Si$\mid$$\mid$$SiO_2/Si$ bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was ap­pplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuous­tly with the increase of annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.202.2-202.2
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• 2014

We have studied the bonding structures of five membered aromatic ring heterocyclic molecules, such as furan, thiophene, and selenophene, adsorbed on the Si(100) surface at room temperature with density functional theory. Additionally, we have investigated the evolution upon annealing of thiophene and selenophene molecules on the Si(100) surface by the core-level photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS). The core-level-spectra measured at different temperatures are consistently interpreted in terms of various adsorption structures suggested by theoretical calculations. In this study, we found the most suitable structures by theoretical and experimental results considering room temperature and mild thermal annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.63-69
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• 2013

The warpage of a bottom package of Package on Package(PoP) where a chip was mounted to a substrate by flip chip process was compared to that of a bottom package for which a chip was bonded to a substrate using die attach film(DAF). At the solder reflow temperature of $260^{\circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpages of $57{\mu}m$ and $-102{\mu}m$, respectively. At the temperature range between room temperature and $260^{\circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpage values ranging from $-27{\mu}m$ to $60{\mu}m$ and from $-50{\mu}m$ to $-15{\mu}m$, respectively.

• ETRI Journal
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• v.46 no.2
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• pp.347-359
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• 2024

A simultaneous transfer and bonding (SITRAB) process using areal laser irradiation is introduced for high-yield and cost-effective production of mini- or micro-light-emitting diode (LED) display panels. SITRAB materials are special epoxy-based solvent-free pastes. Three types of pot life are studied to obtain a convenient SITRAB process: Room temperature pot life (RPL), stage pot life (SPL), and laser pot life (LPL). In this study, the RPL was found to be 1.2 times the starting viscosity at 25℃, and the SPL was defined as the time the solder can be wetted by the SITRAB paste at given stage temperatures of 80℃, 90℃, and 100℃. The LPL, on the other hand, was referred to as the number of areal laser irradiations for the tiling process for red, green, and blue LEDs at the given stage temperatures. The process windows of SPL and LPL were identified based on their critical time and conversion requirements for good solder wetting. The measured RPL and SPL at the stage temperature of 80℃ were 6 days and 8 h, respectively, and the LPL was more than six at these stage temperatures.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.35-39
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• 2018

This paper deals with the relaxation of singular stresses developed in an epoxy adhesive at high temperature. The interface stresses are analyzed using BEM. The adhesive employed in this study is an epoxy which can be cured at room temperature. The adhesive is assumed to be linearly viscoelastic. First, the distribution of the interface stresses developed in the adhesive layer under the uniform tensile stress has been calculated. The singular stress has been observed near the interface corner. Such singular stresses near the interface corner may cause epoxy layer separated from adherent. Second, the interfacial thermal stress has been investigated. The uniform temperature rise can relieve the stress level developed in the adhesive layer under the external loading, which can be viewed as an advantage of thermal loading. It is also obvious that temperature rise reduces the bonding strength of the adhesive layer. Experimental evaluation is required to assess a trade-off between the advantageous and deleterious effects of temperature.

• The Journal of Korean Academy of Prosthodontics
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• v.34 no.4
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• pp.833-849
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• 1996

The material of choice for functional and esthetic reconstruction of maxillofacial defects is silicone. Silicone has appropriate physical properties for maxillofacial prosthesis but it has weak edge strength. Therefore, a proper combination of silicone and polyurethane sheet is recommended to improve this weakness. Various primers are also used to enhance the adhesive strength between silicone and polyurethane sheet. The purpose of this study was to determine the adhesive strength of silicone and polyurethane sheet. Silicone elastomer mixture was made by admixing MDX4-4210 elastomer (40%) and Silastic Medical Adhesive Type A(60%). This silicone elastomer mixture was attached to polyurethane sheet, using one of three different primers(1205, S-2260, or A-304), treated for 1, 2, 4, 6, and 8 hours. These were then polymerized in room temperature, dry-heat oven or microwave oven. Six specimens per each group, a total of 270 specimens were prepared for final test. The differences of T-peel bonding strengths were then determined by a test. The differences of T-peel bonding strengths were then determined by a test method that was recommended by American Society for Testing and Materials C794-80. The results were statistically analyzed using the ANOVA and Mutiple Range Tests(Tukey' HSD). The reults were as follow. 1. Type of primer, primer reaction time, and methods of polymerization showed significant correlation on the T-peel bonding strengths in adhesiveness between silicone and polyurethane sheet. 2. A-304 primer showed statistically higher in T-peel bonding strength than otehr type of primers except for the polymerization in microwave oven with reaction times of 2, 6 hours(p<0.05). 3. No significant differences in T-peel bonding strength were observed among the polymerization methods. 4. The effect of reaction time by the primer type and polymerization method showed statistically significant differences in bonding strength among different reaction times. And in most cases, reaction time of 1 or 2 hours showed higher T-peel bonding strength.