• The Journal of the Acoustical Society of Korea
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• v.26 no.5
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• pp.214-219
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• 2007

This paper proposes a new IFFT(Inverse Fast Fourier Transform) algorithm, which is proper for IMDCT(Inverse Modified Discrete Cosine Transform) of MPEG-2 AAC(Advanced Audio Coding) decoder. The $2^n$(N-point) type IMDCT is the most powerful among many IMDCT algorithms, however it includes IFFT that requires many calculation cycles. The IFFT used in $2^n$(N-point) type IMDCT employ the bit-reverse data arrangement of inputs and N/4-point complex IFFT to reduce the calculation cycles. We devised a new data arrangement method of IFFT input and $N/4^{n+1}$-type IFFT and thus we can reduce multiplication cycles, addition cycles, and ROM size.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.1
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• pp.229-234
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• 1999

We analyzed the reliability characteristics in platinum schottky diodes with variations of n-type silicon substrates concentrations and temperature variations of measurements. The parameters of reliability measurement analysis are saturation current. turn-on voltage and ideality factor in the forward bias, the breakdown voltage in the reverse bias with device shapes. The shape of devices are square type and long rectangular type for edge effect. As a result, we analyzed that the forward turn-on voltage, barrier height, dynamic resistance and reverse breakdown voltage were decreased but ideality factor and saturation current were increased by increased concentration in platinum and n-silicon junction parts. In measurement temperature(RT, $50^{\circ}C$, $75^{\circ}C$), the extracted electrical parameter values of reliability characteristics were increased at the higher temperature under the forward and reverse bias. The long rectangular type devices were more decreased than the square type in reverse breakdown voltage by tunneling effects of edge part.

• Bulletin of the Korean Mathematical Society
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• v.59 no.5
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• pp.1255-1268
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• 2022

We consider the Schrödinger type operator 𝓛 = (-𝚫_ℍⁿ)² + V² on the Heisenberg group ℍⁿ, where 𝚫_ℍⁿ is the sub-Laplacian and the non-negative potential V belongs to the reverse Hölder class RH_s for s ≥ Q/2 and Q ≥ 6. We shall establish the (L^p, L^q) estimates for the Riesz transforms T_𝛼,𝛽,j = V^2𝛼𝛁^j_ℍⁿ𝓛^-𝛽, j = 0, 1, 2, 3, where 𝛁_ℍⁿ is the gradient operator on ℍⁿ, 0 < α ≤ 1-j/4, j/4 < 𝛽 ≤ 1, and 𝛽 - 𝛼 ≥ j/4.

• Membrane Journal
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• v.10 no.4
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• pp.220-229
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• 2000

Deionized water and wastewater flux were discussed using module set 1-7 composed of ultrafiltration hollow fiber type modules and reverse osmosis spiral wound type modules. The separation characteristics of ultrafiltration and reverse osmosis membranes were discussed with the variation of applied pressure and temperature. Turbidity and SS were removed effectively from ultrafiltration mem¬brane, and removal efficiency of COD, T-N, and TDS using reverse osmosis membrane was very efficient. Permeate flux increased linearly with the increase of applied pressures and temperature. It was shown that ultrafiltration and reverse osmosis membranes were suitable Lo the advanced treatment and reuse of oil refinery process effluent.

• Journal of the Korean Mathematical Society
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• v.47 no.2
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• pp.425-443
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• 2010

We investigate the Schr$\ddot{o}$dinger type operator $H_2\;=\;(-\Delta_{\mathbb{H}^n})^2+V^2$ on the Heisenberg group $\mathbb{H}^n$, where $\Delta_{\mathbb{H}^n}$ is the sublaplacian and the nonnegative potential V belongs to the reverse H$\ddot{o}$lder class $B_q$ for $q\geq\frac{Q}{2}$, where Q is the homogeneous dimension of $\mathbb{H}^n$. We shall establish the estimates of the fundamental solution for the operator $H_2$ and obtain the $L^p$ estimates for the operator $\nabla^4_{\mathbb{H}^n}H^{-1}_2$, where $\nabla_{\mathbb{H}^n}$ is the gradient operator on $\mathbb{H}^n$.

• Communications of the Korean Mathematical Society
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• v.34 no.2
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• pp.573-583
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• 2019

This article studies the monotonicity, log-convexity of the modified Lommel functions by using its power series and infinite product representation. Some properties for the ratio of the modified Lommel functions with the Lommel function, sinh and cosh are also discussed. As a consequence, $Tur{\acute{a}}n$ type and reverse $Tur{\acute{a}}n$ type inequalities are given. A Rayleigh type function for the Lommel functions are derived and as an application, we obtain the Redheffer-type inequality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• Bulletin of the Korean Mathematical Society
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• v.56 no.5
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• pp.1117-1127
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• 2019

Let ${\mathcal{L}}_2=(-{\Delta})^2+V^2$ be the $Schr{\ddot{o}}dinger$ type operator, where nonnegative potential V belongs to the reverse $H{\ddot{o}}lder$ class $RH_s$, s > n/2. In this paper, we consider the operator $T_{{\alpha},{\beta}}=V^{2{\alpha}}{\mathcal{L}}^{-{\beta}}_2$ and its conjugate $T^*_{{\alpha},{\beta}}$, where $0<{\alpha}{\leq}{\beta}{\leq}1$. We establish the $(L^p,\;L^q)$-boundedness of operator $T_{{\alpha},{\beta}}$ and $T^*_{{\alpha},{\beta}}$, respectively, we also show that $T_{{\alpha},{\beta}}$ is bounded from Hardy type space $H^1_{L_2}({\mathbb{R}}^n)$ into $L^{p_2}({\mathbb{R}}^n)$ and $T^*_{{\alpha},{\beta}}$ is bounded from $L^{p_1}({\mathbb{R}}^n)$ into BMO type space $BMO_{{\mathcal{L}}1}({\mathbb{R}}^n)$, where $p_1={\frac{n}{4({\beta}-{\alpha})}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})}}$.

• Bulletin of the Korean Mathematical Society
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• v.58 no.1
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• pp.235-251
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• 2021

We consider the Schrödinger type operator ��k = (-∆)k+Vk on ℝn(n ≥ 2k + 1), where k = 1, 2 and the nonnegative potential V belongs to the reverse Hölder class RHs with n/2 < s < n. In this paper, we establish the (Lp, Lq)-boundedness of the higher order Riesz transform T��,�� = V2��∇2��-��2 (0 ≤ �� ≤ 1/2 < �� ≤ 1, �� - �� ≥ 1/2) and its adjoint operator T∗��,�� respectively. We show that T��,�� is bounded from Hardy type space $H^1_{\mathcal{L}_2}({\mathbb{R}}_n)$ into Lp2 (ℝn) and T∗��,�� is bounded from ��p1 (ℝn) into BMO type space $BMO_{\mathcal{L}_1}$ (ℝn) when �� - �� > 1/2, where $p_1={\frac{n}{4({\beta}-{\alpha})-2}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})+2}}$. Moreover, we prove that T��,�� is bounded from $BMO_{\mathcal{L}_1}({\mathbb{R}}_n)$ to itself when �� - �� = 1/2.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.