• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.108-110
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• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.147-151
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• 2002

We fabricated and characterized a millimeter-wave ceramic package in a frequency range from 6 to 40㎓ using the LTCC(Low Temperature Cofired Ceramic) Technology and TRL(Thru-Reflect-Line) calibration method. From these measurement results, the fabricated feed-through structure achieved 0.5 dB, 14 dB of the insertion loss and the return loss at 30 GHz respectively. This ceramic package will be useful for MMIC(Monolithic Microwave Integrated Circuit) modules.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.259-263
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• 2002

We design and characterize a millimeter-wave ceramic package in a frequency range from DC to 300Hz using the FEM(Finite Element Method) calculation. From these calculation results, the designed feed-through structure achieved 0.32 dB, 16.8 dB of the insertion loss and the return loss at 30 GHz respectively. This ceramic package will be useful for MMIC(Monolithic Microwave Integrated Circuit) modules.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.621-624
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• 1998

This paper presents a new configuration of dielectric bandpass filter using the comb-line filter design theory. This filter is composed of a homogeneous dielectric monoblock $(\varepsilonr=35.5)$ with two metal post and a dielectric sheet $(\varepsilonr=9.8).$ In this structure, the RF leakage is suppressed without other shield housing. For the fabricated filter, insertion loss value in the passband region was 0.9dB(Max.) and return loss value was 19dB(Min). Also, this filter has a attenuation pole in the stopband.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.107-114
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• 2009

In this paper, high efficiency amplifier configuration is proposed using the reconfigurable power divider. In order to enhance average efficiency of linear power amplifiers for wireless communication, it is required to increase efficiency in low output power region. The proposed power divider operates in two modes, high power mode and low power mode, according to output power. In each mode, it allows impedance matches and low loss, which is made possible by employing two $\lambda/4$ coupled lines and two switches. The fabricated power divider shows the return loss ($S_{11}$) and insertion loss ($S_{21}$) of -16.49 dB and -0.83 dB, respectively, in low power mode. In high power mode, the measured return loss ($S_{11}$) and insertion loss ($S_{31}$) are -16.28 dB and -0.73 dB, respectively. This result successfully demonstrates the reconfigurability of the proposed power divider.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.12
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• pp.1423-1431
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• 2010

In this paper, the dual-band compact broad bandpass filter using parallel coupled line is proposed. The proposed filter has reduced size and can be controlled bandwidth. And it is also possible to operate in the dual-band purpose. Futhermore, the inserted bandstop fiilter with T-type configuration is also possible to operate in the same purpose. The dual-band bandpass filter has the first operating frequencies and its bandwidth which are 5.8 GHz and 60 % respectively and the second operating frequency and the bandwidth are 16.2 GHz and 60 % respectively. The insertion loss and the return loss of the first frequency has 0.4 dB and 17.4 dB and the insertion loss and the return loss of the second frequency has 0.62 dB and 19.8 dB, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.95-103
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• 2019

In this paper, we present a microstrip-to-substrate integrated waveguide(SIW) transition and microstrip-to-hollow SIW(HSIW) transition for Ku-band satellite communication systems. For the complete utilization of the HSIW, a structure filled with air instead of a dielectric material, a microstrip-to-HSIW transition is designed, fabricated, and compared with a microstrip-to-SIW transition. A back-to-back microstrip-to-SIW transition is measured in the range 12~18 GHz; it exhibits a return loss ${\geq}20dB$ and an insertion loss of $1.5{\pm}0.2dB$. In contrast, a back-to-back microstrip-to-HSIW transition exhibits a return loss of at least 15 dB and an insertion loss of $0.55{\pm}0.2dB$ in the same frequency range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.165-171
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• 2004

In this paper, the modeling and design of high-Q multilayer passives have been investigated, and multilayer diplexer for GSM/DCS applications has been designed and fabricated using the passives. Modeling of a multilayer inductor was performed by the subsystems of distributed components, and using the modeling the optimal structures of the high-Q multilayer inductor could be designed by analyzing parasitics and couplings which affect their frequency characteristics. Multilayer diplexers for GSM/DCS applications have been designed and fabricated using LTCC technology. LPF for GSM band had the passband insertion loss of less than 0.55 dB, the return loss of more than 12 dB, and the isolation level of more than 26 dB. HPF for DCS band had the passband insertion loss of less than 0.82 dB, the return loss of more than 11 dB, and the isolation level of more than 38 dB.