• 한국해양학회지:바다
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• 제18권1호
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• pp.47-52
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• 2013

생태계 질소 순환 연구에서 동위원소 추적자를 이용한 실험은 그 유용성에도 불구하고, 무기 질소의 안정동위원소 측정이 어려워 자료의 생산이 활발하지 못한 형편이다. Gardner et al. (1996)은 HPLC (high performance liquid chromatography)를 이용하여 비교적 간편하고 정밀하게 암모늄의 동위원소 비를 측정하는 방법을 개발해 질소순환 연구에 활발하게 활용하였다. 그러나 일반적이지 않은 syringe 펌프가 필요해 다른 실험실에 이 시스템이 도입되지는 못하였다. 본 연구에서는 최신 HPLC 펌프 기술을 활용하여 Dr. Gardner 그룹 이후 최초로 암모늄 동위원소비 측정 시스템을 구축하였다. 표준시료 측정 결과 RTS (retention time shift)는 안정동위원소 비와 좋은 상관관계를 보였다. 이 시스템은 측정 자료를 디지털 형태로 변환하는 장치까지 갖추어 컴퓨터 프로그램을 이용한 다양한 자료처리가 가능하다. 특히 Matlab$^{(R)}$ 이용하여 retention time 계산에 peak 면적을 이용함으로써 측정의 정확성을 높이고, 직선성을 향상할 수 있었다. 영산강 하구 해수를 가지고 실시한 $^{15}N$-암모늄 첨가 실험에서 $^{15}N/^{14}N$ 비율 변화를 HPLC-RTS법을 통해 측정하였으며, 식물성 플랑크톤에 의한 암모늄 섭취와 재광물화 과정을 각각 독립적으로 측정하는 것이 가능했다.

• Journal of Preventive Medicine and Public Health
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• 제30권1호
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• pp.171-179
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• 1997

본 연구는 유기용제 만성 폭로 근로자들에게서 급성 폭로후 폭로 중지 시간에 따른 신경행동검사의 변화 양상을 보기 위하여 시행되었다. 대상군은 1개 피혁운동화 제조업체에서 5년이상 근무한 여성 근로자 34명이었으며 NCTB증 4가지 항목-숫자 암기, Santa Ana Dexterity, Benton Visual Retention, 숫자 부호 짝짓기-을 1인당 3회 반복 시행하였다. 검사 시점은 각각 월요일 작업 시작 전, 평일 작업 시작 전, 평일 작업 중이었다. 시행 시점에 따라 유의한 수행 능력의 차이를 보인 항목은 숫자 암기 정순, Benton Visual Retention, Santa Ana Dexterity 우수와 열수, 그리고 숫자 부호 짝짓기였으며 특히 평일 작업 중의 수행 능이 월요일 작업시작 전, 평일 작업 시작 전에 비하여 통계적으로 유의하게 감소하였다. 또한 Santa Ana Dexterity 우수, 숫자 부호 짝짓기에서는 평일 작업 시작 전의 수행능력도 월요일 작업 시작 전에 비하여 유의하게 감소하였다. 전반적으로 고 폭로군, 50세 이상, 6년 미만의 교육수준에서 평일 작업 중의 수행능 감소가 뚜렷하게 나타났다. 이상에서 만성 유기용제 폭로의 중추 신경계 장애를 보기 위한 신경행동검사는 휴일 후 작업 시작 전에 시행하는 것이 바람직하며 단기 기억력과 관련된 검사 항목은 평일 작업 시작전에 시행하는 것도 고려해 볼 수 있을 것으로 보인다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• 자원리싸이클링
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• 제30권6호
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• pp.12-18
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• 2021

수성가스 전환 반응은 가스화로 생성된 합성 가스에 수소 생산 증가와 H₂/CO 비율 제어를 위해 수증기를 첨가하는 가스화 후속 공정이다. 본 연구에서는 RPF(Refuse plastic fuel) 가스화 시스템의 합성가스를 대상으로 수성가스 전환 반응을 연구하였다. 수성가스 전환 반응은 촉매를 이용하여 high temperature shift(HTS) 와 low temperature shift(LTS) 반응에 대하여 lab scale 관형 반응기를 이용하여 반응 온도, steam/carbon ratio, 유량의 변화가 H₂ 생성과 CO 전환율에 미치는 영향을 조사하였다. 운전 온도는 HTS 시스템이 250-400℃, LTS 시스템이 190-220℃이며 steam/carbon ratio는 1.5-3.5로 변화시켰다. 반응 모의 가스의 농도는 RPF 합성가스의 농도를 기준으로 CO, 40vol%, H₂, 25vol%, CO₂, 25vol%이다. 반응 온도와 steam/carbon ratio가 증가함에 따라 CO 전환율 및 H₂ 생성량이 증가하고, 유량이 증가하면 촉매층의 체류시간 단축으로 CO 전환율과 H₂ 생성량이 감소하였다.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 2008년도 제33회 펄프종이기술 국제세미나
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• pp.47-70
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• 2008

Cost efficiency is today the primary requirement in the paper and board industry. This has led therefore, to a greater preponderance of products with specifically designed functionality to take account of current industry needs. Continually increasing machine coating speeds together with these new coating colour components have put more emphasis on the importance of the correct rheology and water retention of the coating colours to achieve good runnability and end product quality. In the coating process, some penetration of the aqueous phase, to the base paper or board must occur to anchor the pre-coating to the base or the topcoat to the pre-coat. The aqueous phase acts as a vehicle not only for the binder, but also for the other components. If this water or material penetration is not controlled, there will be excessive material shift from the coating colour to the base, before immobilization of the coating colour will stop this migration. This can result in poor machine runnability, unstable system and uneven coating layer, impacting print quality. The performance of rheology modifiers or thickeners on the coating color have tended to be evaluated by the term, "water retention". This simple term is not sufficient to explain their performance changes during coating. In this paper we are introducing a new concept of "material retention", which takes note of the total composition of the coating colour material and therefore goes beyond the concept of only water retention. Controlled material retention leads to a more uniform z-directional distribution of coating colour components. The changes that can be made to z-directional uniformity will have positive effects on print quality as measured by surface strength, ink setting properties, print gloss, mottling tendency. Optical properties, such as light scattering, whiteness and light fastness delivery should also be improved. Additionally, controlled material retention minimizes changes to the coating colour with time in re-circulation giving less fluctuation in quality in the machine direction since it more closely resembles fresh coating for longer periods. Use of the material retention concept enables paper and board producers to have more stable runnability (i.e. lower process costs), improved end product quality (i.e. better performance of used chemicals) and/or optimized use of coating colour components (i.e. lower total formulation cost)

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.727-736
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• 1995

This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

• Biotechnology and Bioprocess Engineering:BBE
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• 제10권3호
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• pp.270-274
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• 2005

A reactor-scale hydrogen (H2) production via the water-gas shift reaction of carbon monoxide (CO) and water was studied using the purple nonsulfur bacterium, Rhodopseudomonas palustris P4. The experiment was conducted in a two-step process: an aerobic/chemoheterotrophic cell growth step and a subsequent anaerobic $H_2$ production step. Important parameters investigated included the agitation speed. inlet CO concentration and gas retention time. P4 showed a stable $H_2$ production capability with a maximum activity of 41 mmol $H_2$ g $cell^{-1}h^{-1}$ during the continuous reactor operation of 400 h. The maximal volumetric H2 production rate was estimated to be 41 mmol $H_2 L^{-1}h^{-1}$, which was about nine-fold and fifteen-fold higher than the rates reported for the photosynthetic bacteria Rhodospirillum rubrum and Rubrivivax gelatinosus, respectively. This is mainly attributed to the ability of P4 to grow to a high cell density with a high specific $H_2$ production activity. This study indicates that P4 has an outstanding potential for a continuous H2 production via the water-gas shift reaction once a proper bioreactor system that provides a high rate of gas-liquid mass transfer is developed.

• Journal of Forest and Environmental Science
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• 제24권1호
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• pp.1-14
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• 2008

Clearcutting has been the dominant harvesting method in British Columbia (representing 95% of the total area harvested annually). However forest managers are increasingly recommending the use of alternative silvicultural systems and harvest methods, including various types of partial cutting, to meet ecological and social objectives. In this study we compared harvesting productivity and harvesting costs between treatments through detailed and shift level time studies in 300-350 year-old Interior Cedar-Hemlock stands in British Columbia, Canada. Recommendations for improving operational planning/layout and the implementation of clearcut and partial cutting silvicultural systems were made. Harvesting costs varied in the ground-based clearcut treatments from $10.95/$m^3$ - $15.96/$m^3$ and $16.09/$m^3$ - $16.93/$m^3$ in the group selection treatments. The ground-based group retention treatment had a cost of $13.39/$m^3$, while the cable clearcut had a cost of $15.70/$m^3$. An understanding of the traditional and alternative wood products that could be derived from the harvested timber was imperative to increasing the amount of merchantable volume and reducing the corresponding harvesting costs. Stand damage was greatest in the group selection treatments; however, mechanized felling showed an increase in stand damage over manual felling while grapple skidding showed a decrease in skidding damage compared to line skidding.

• Journal of the Korean Wood Science and Technology
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• 제16권2호
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• pp.79-89
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• 1988

본(本) 실험(實驗)은 리기다소나무(Pinus rigida Mill)를 petroleum ether로 추출(抽出)한 추출액(抽出被)과 흑액(黑液)으로부터 얻은 tall oil과의 조성(組成)의 변화(變化)를 조사(調査)하기 위하여 실시(實施)하였다. 생재(生材)의 유기용매(有機溶媒) 추출액(抽出液)과 tall oil 을 DEAE-Sephadex 칼럼과 aluminum oxide 칼럼을 사용하여 수지산(樹脂酸)과 지방산(脂肪酸)으로 분리(分離)한 후 이를 개스크로마토 그래프로 분석(分析)하였다. 본(本) 실험(實驗)에서 얻는 결과(結果)는 다음과 같다. 생재(生材)의 유기용매(有機溶媒) 추출액(抽出液힘)과 tail oil은 주로 수지산(樹脂酸)으로 구성(構成)되어 있고 특히 abietic-type acide의 함량(含量)이 매우 높게 나타났으며, tall oil의 조성(組成)은 생재(生材)의 유기용매(有機溶媒) 추출물(抽出物)에 비(比)해 지방산(脂肪酸)의 함량(含量)이 증가(增加)한 반면 수지산(樹脂酸)은 감소(減少)하였고, 증해시(蒸解時) 고온(高溫)과 증해약품(蒸解藥品)에 의하여 불포화(不飽和) 지방산(脂肪酸)의 이중결합(二重結合) 위치(位置)의 변화(變化) 및 이성질화(異性質化)에 의하여 미확인(未確認) 물질(物質)의 양(量)이 증가(增加)하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.