• Title/Summary/Keyword: resistive mixer

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Design of 900MHz CMOS RF Front-End IC for Digital TV Tuner (디지털 TV 튜너용 900MHz CMOS RF Front-End IC의 설계 및 구현)

  • 김성도;유현규;이상국
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.104-107
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    • 2000
  • We designed and implemented the RFIC(RF front-end IC) for DTV(Digital TV) tuner. The DTV tuner RF front-end consists of low noise IF amplifier fur the amplification of 900 MHz RF signal and down conversion mixer for the RF signal to 44MHz IF conversion. The RFIC is implemented on ETRI 0.8u high resistive (2㎘ -cm) and evaluated by on wafer, packaged chip test. The gain and IIP3 of IF amplifier are 15㏈ and -6.6㏈m respectively. For the down conversion mixer gain and IIP3 are 13㏈ and -6.5㏈m. Operating voltage of the IF amplifier and the down mixer is 5V, current consumption are 13㎃ and 26㎃ respectively.

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Estimation of DOA Measurement System using DBF Receiver (DBF 수신기를 이용한 DOA 측정시스템의 평가)

  • Min, Kyeong-Sik;Park, Chul-Keun;Ko, Jee-Won
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.219-223
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    • 2003
  • This paper describes an estimation of DOA(Direction Of Arrival) measurement system using DBF receiver with linear array antenna. This DBF receiver is composed of resistive FET mixer using low IF mettled. A radio frequency(RF), a local oscillator(LO) and ail intermediate frequency(IF) considered in this research are 2.09 GHz, 2.08 GHz and 10 MHz, respectively. This receiver is composed of a band-pass filter, a low-pass filter, a DC bias circuit. DOA measurement system is consist of linear array antenna, DBF receiver, AD control box and computer in the anechoic chamber. Receiving antenna is 4-array monopole antenna and DBF receiver is 4-Ch resistive FET mixer without amplifier. DOA algorithm is implemented using MUSIC algorithm with high resolution. We show that the results of DOA is $-30^{\circ},\;0^{\circ}$ and $60^{\circ}$, respectively. And we know that DOA estimation error occur by antenna radiation pattern and fabrication error of antenna array.

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Low Conversion Loss and High Isolation W-band MMIC Mixer Module (낮은 변환 손실 및 높은 격리 특성의 W-band MMIC 믹서 모듈)

  • An, Dan;Rhee, Jin-Koo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.2
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    • pp.50-54
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    • 2015
  • In this paper, we report on a high performance 94 GHz MMIC mixer module using 0.1-um metamorphic high electron mobility transistors (MHEMTs). A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO-RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW-waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 dB and 9.5 dB, and LO-RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W-band (75-110 GHz) MMIC mixers.

Design of a 2-Port Frequency Mixer for the Retrodirective Active Array Antenna (역지향성 능동배열 안테나용 2-Port 주파수 혼합기의 설계)

  • 전중창;김태수;김현덕
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05b
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    • pp.59-63
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    • 2004
  • In this paper, we have developed a 2-port resistive frequency mixer for the retrodirective active array. The circuit topology is consisted of 2-port to avoid the complexity of LO and RF signal combination, using a pseudomorphic HEMT device. The operating frequencies are 4.0 GHz, 2.01 GHz, and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -1㏈ and 1-㏈ compression point -15 ㏈m at the LO power of -10 ㏈m.

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60 GHz CMOS SoC for Millimeter Wave WPAN Applications (차세대 밀리미터파 대역 WPAN용 60 GHz CMOS SoC)

  • Lee, Jae-Jin;Jung, Dong-Yun;Oh, Inn-Yeal;Park, Chul-Soon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.670-680
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    • 2010
  • A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

W-band Single-chip Receiver MMIC for FMCW Radar (FMCW 레이더용 W-대역 단일칩 수신기 MMIC)

  • Lee, Seokchul;Kim, Youngmin;Lee, Sangho;Lee, Kihong;Kim, Wansik;Jeong, Jinho;Kwon, Youngwoo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.10
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    • pp.159-168
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    • 2012
  • In this paper, a W-band single-chip receiver MMIC for FMCW(Frequency-modulated continuous-wave) radar is presented using $0.15{\mu}m$ GaAs pHEMT technology. The receiver MMIC consists of a 4-stage low noise amplifier(LNA), a down-converting mixer and a 3-stage LO buffer amplifier. The LNA is designed to exhibit a low noise figure and high linearity. A resistive mixer is adopted as a down-converting mixer in order to obtain high linearity and low noise performance at low IF. An additional LO buffer amplifier is also demonstrated to reduce the required LO power of the W-band mixer. The fabricated W-band single-chip receiver MMIC shows an excellent performance such as a conversion gain of 6.2 dB, a noise figure of 5.0 dB and input 1-dB compression point($P_{1dB,in}$) of -12.8 dBm, at the RF frequency of $f_0$ GHz, LO input power of -1 dBm and IF frequency of 100 MHz.

MIMIC 94 GHz high isolation single balanced cascode mixer (94 GHz 대역의 높은 격리 특성의 MIMIC single balanced cascode 믹서)

  • Lee, Sang-Jin;An, Dan;Lee, Mun-Kyo;Moon, Sung-Woon;Bang, Suk-Ho;Baek, Tae-Jong;Kwon, Hyuk-Ja;Jun, Byoung-Chul;Yoon, Jin-Seob;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.25-33
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    • 2007
  • In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

A Wideband Down-Converter for the Ultra-Wideband System (초광대역 무선통신시스템을 위한 광대역 하향 주파수 변환기 개발에 관한 연구)

  • Kim Chang-Wan;Lee Seung-Sik;Park Bong-Hyuk;Kim Jae-Young;Choi Sang-Sung;Lee Sang-Gug
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.189-193
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    • 2005
  • In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.