• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1181-1186
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• 2003

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

• Journal of Veterinary Science
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• v.23 no.6
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• pp.68.1-68.8
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• 2022

Background: Studies on anesthetized dogs regarding pulse pressure variation (PPV) are increasing. The influence of respiratory rate (RR) on PPV, in mechanically ventilated dogs, has not been clearly identified. Objectives: This study evaluated the influence of RR on PPV in mechanically ventilated healthy dogs after hemorrhage. Methods: Five healthy adult Beagle dogs were premedicated with intravenous (IV) acepromazine (0.01 mg/kg). Anesthesia was induced with alfaxalone (3 mg/kg IV) and maintained with isoflurane in 100% oxygen. The right dorsal pedal artery was cannulated with a 22-gauge catheter for blood removal, and the left dorsal pedal artery was cannulated and connected to a transducer system for arterial blood pressure monitoring. The PPV was automatically calculated using a multi-parameter monitor and recorded. Hemorrhage was induced by withdrawing 30% of blood (24 mL/kg) over 30 min. Mechanical ventilation was provided with a tidal volume of 10 mL/kg and a 1:2 inspiration-to-expiration ratio at an initial RR of 15 breaths/min (baseline). Thereafter, RR was changed to 20, 30, and 40 breaths/min according to the casting lots, and the PPV was recorded at each RR. After data collection, the blood was transfused at a rate of 10 mL/kg/h, and the PPV was recorded at the baseline ventilator setting. Results: The data of PPV were analyzed using the Friedman test followed by the Wilcoxon signed-rank test (p < 0.05). Hemorrhage significantly increased PPV from 11% to 25% at 15 breaths/min. An increase in RR significantly decreased PPV from 25 (baseline) to 17%, 10%, and 10% at 20, 30, and 40 breaths/min, respectively (all p < 0.05). Conclusions: The PPV is a dynamic parameter that can predict a dog's hemorrhagic condition, but PPV can be decreased in dogs under high RR. Therefore, careful interpretation may be required when using the PPV parameter particularly in the dogs with hyperventilation.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.359-361
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• 2006

As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.26-31
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• 2007

The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.108-111
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• 2006

The oxidizer-induced corrosion state and microstructure of surface passive metal-oxide layer greatly influenced on the removal rate of tungsten film according to the slurry chemical composition of different mixed oxidizers. In this paper, the actual polishing mechanism and pH-potential equilibrium diagram obtained from potentiodynamic polarization curve were electrochemically compared. An electrochemical corrosion effect implies that slurries with the highest removal rate (RR) have the high dissolution rate.

• Journal of Korean Society of Water and Wastewater
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• v.37 no.5
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• pp.281-288
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• 2023

This study was performed to evaluate the pollutants removal characteristics of two types of RBFs(Riverbank filtration, Riverbed filtration) intake facilities installed in Nakdong River and in Hwang River respectively. The capacity of each RBF is 45,000 m³/d for riverbank filtration intake facility and 3,500 m³/d for riverbed filtration intake facility. According to data collected in the riverbank filtration site, removal rate of each pollutant was about BOD(Biochemical Oxygen Demand) 52%, TOC(Total Organic Carbon) 57%, SS(Suspended Solids) 44%, Total coliforms 99% correspondingly. Furthermore, Microcystins(-LR,-YR,-RR) were not found in riverbank filtered water compared to surface water in Nakdong River. DOC(Dissolved Organic Carbon) and Humics which are precursors of disinfection byproduct were also reported to be removed about 59% for DOC, 65% for Humics. Based on data analysis in riverbed filtration site in Hwang River, removal rate of each contaminant reaches to BOD 33.3%, TOC 38.5%, SS 38.9%, DOC 22.2%, UV254 21.2%, Total coliforms 73.8% respectively. Additionally, microplastics were also inspected that there was no obvious removal rate in riverbed filtered water compared to surface water in Hwang River.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.567-568
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• 2006

To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.