DOI QR코드

DOI QR Code

Application of Potential-pH Diagram and Potentiodynamic Polarization of Tungsten

  • Seo, Yong-Jin (Department of Electrical Engineering, Daebul University) ;
  • Park, Sung-Woo (Department of Electrical Engineering, Daebul University) ;
  • Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
  • Published : 2006.06.01

Abstract

The oxidizer-induced corrosion state and microstructure of surface passive metal-oxide layer greatly influenced on the removal rate of tungsten film according to the slurry chemical composition of different mixed oxidizers. In this paper, the actual polishing mechanism and pH-potential equilibrium diagram obtained from potentiodynamic polarization curve were electrochemically compared. An electrochemical corrosion effect implies that slurries with the highest removal rate (RR) have the high dissolution rate.

Keywords

References

  1. F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A Jaso, W. L. Gutherie, D. J. Pearson, and M. B. Small, 'Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects', J. Electrochem. Soc., Vol. 138, No. 11, p. 3460, 1991 https://doi.org/10.1149/1.2085434
  2. M. Bielmann, U. Mahajan, and R. K. Singh, 'Effect of particle size during tungsten chemical mechanical polishing', Electrochem. Solid St., Vol. 2, No. 8, p. 401, 1999 https://doi.org/10.1149/1.1390851
  3. M. Bielmann, U. Mahajan, R. K. Singh, D. O. Shah, and B. J. Palla, 'Enhanced tungsten chemical mechanical polishing using stable alumina slurries', Electrochem. Solid St., Vol. 2, No. 3, p. 148, 1999 https://doi.org/10.1149/1.1390765
  4. T. Hara, T. Tomisawa, T. Kurosu, and T. K. Doy, 'Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry', J. Electrochem. Soc., Vol. 146, No. 6, p. 2333, 1999 https://doi.org/10.1149/1.1391936
  5. Y. J. Seo and W. S. Lee, 'Effects of oxidant additives for exact selectivity control of W- and Ti-CMP process', Microelectron. Eng., Vol. 77, No. 2, p. 132, 2005 https://doi.org/10.1016/j.mee.2004.10.003
  6. J. Hernandez, P. Wrschka, and G. S. Oehrlein, 'Surface chemistry studies of copper chemical mechanical planarization', J. Electrochem. Soc., Vol. 148, No. 7, p. G389, 2001 https://doi.org/10.1149/1.1377595
  7. M. Pourbaix, 'Atlas of Electrochemical Equilibrium in Aqueous Solutions', NACE, Houston, TX, 1974
  8. J. M. Steigerwald, S. P. Murarka, and R. J. Gutmann, 'Chemical mechanical planarization of microelectronic materials', John Wiley & Sons, New York p. 194, 1997

Cited by

  1. Slurry components in metal chemical mechanical planarization (CMP) process: A review vol.17, pp.12, 2016, https://doi.org/10.1007/s12541-016-0201-y
  2. High-performance aqueous asymmetric supercapacitor based on K 0.3 WO 3 nanorods and nitrogen-doped porous carbon vol.330, 2016, https://doi.org/10.1016/j.jpowsour.2016.09.022