Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05c
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- Pages.45-48
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- 2003
Polishing Characteristics of passivation layer by abrasive particles and slurry chemical in the Metal CMP process
금속 CMP 공정에서 연마제와 슬러리 케미컬에 의한 passivation layer의 연마특성
- Park, Chang-Jun (Daebul Uni.) ;
- Seo, Yong-Jin (Daebul Uni.) ;
- Lee, Kyoung-Jin (Daebul Uni.) ;
- Jeong, So-Young (Daebul Uni.) ;
- Kim, Sang-Yong (Dongbu Anam Fab) ;
- Lee, Woo-Sun (Chosun Uni.)
- 박창준 (대불대학교 전기공학과) ;
- 서용진 (대불대학교 전기공학과) ;
- 이경진 (대불대학교 전기공학과) ;
- 정소영 (대불대학교 전기공학과) ;
- 김상용 (동부아남 Fab) ;
- 이우선 (조선대학교 전기공학과)
- Published : 2003.05.16
Abstract
The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as
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