• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.4
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• pp.538-542
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• 2018

In order to generate a clock source with low cost and high performance in system on chip(SoC), a relaxation oscillator with stable output characteristics according to PVT(process, voltage and temperature) fluctuation require a low area and a low power. In this paper, we propose a solution to reduce the current loss caused by parasitic components in the conventional relaxation oscillator. Since the slew rate of the bias current and the capacitor are adjusted to be the same through the proposed solution, a relaxation oscillator with low area characteristics is designed for the same clock source frequency implementation. The proposed circuit is designed using the TSMC CMOS 0.18um process. The Simulation results show that the relaxation oscillator using the proposed solution can prevent the current loss of about $279{\mu}A$ and reduce the total chip area by 20.8% compared with the conventional oscillator in the clock source frequency of 96 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.470-473
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• 2001

In this study, 70/30 mol% P(VDF-TrFE) copolymer thin films were prepared by physical vapor deposition, and dielectric properties with frequency were investigated. From results of TA(Thermal Analysis), the Curie transition temperature and melting temperature were observed at 118.8$^{\circ}C$ and 146$^{\circ}C$, respectively. Therefore, while thin films were prepared, the substrate temperature was varied from 30$^{\circ}C$ to 90$^{\circ}C$. The dielectric constant decreased with increasing frequency. At measuring frequency of 1kHz, the relative dielectric constant increased from 3.643 to 23.998 with increasing substrate temperature from 30$^{\circ}C$ to 90$^{\circ}C$. As a result of dielectric loss factor, ${\alpha}$-relaxation and ${\beta}$-relaxation were observed near at 100Hz and 1MHz, respectively. And the magnitude of ${\alpha}$-relaxation decreased and that of ${\beta}$-relaxation increased with increasing substrate temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.728-735
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• 2016

A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.227-232
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• 2023

In this study, complex admittance as a function of temperature and frequency was measured to analyze the important relaxation properties of lead scandium niobate, which is physically important, although it is not an environmentally friendly electrical and electronic material, including lead. Lead scandium niobate was synthesized by heat treating the solid oxide, and the conductance, susceptance and capacitance were measured as a function of temperature and frequency from the temperature dependence of the RLC circuit. The relaxation characteristics of lead scandium niobate were found to be affected by contributions such as grain size, grain boundary characteristics, space charge, and dipole arrangement. As the temperature rises, the maximum admittance and susceptance increase in one direction, but the resonance frequency decreases below the transition temperature but increases after the phase transition.

• Korean Journal of Veterinary Research
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• v.35 no.3
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• pp.447-458
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• 1995

This study was carried out to characterize nonadrenergic, noncholinergic(NANC) relaxation of porcine retractor penis(PRP) muscle induced by electrical field stimulation(EFS) and to investigate the actions of niric oxide(NO) and vasoactive intestinal polypeptide(VIP) as candidates for NANC neurotransmitters. Biphasic relaxations of PRP muscle were induced by EFS to NANC nerve. Rapid-phase relaxation was observed at low frequency(0.5-16Hz) and slow-phase relaxation followed during high frequency(8-60Hz). Both relaxations were frequency-dependent and TTX($1{\times}10^{-6}M$)-sensitive. L-NAME($2{\times}10^{-5}M$) inhibited the rapid-phase relaxation, but not the slow-phase relaxation. The inhibition of the rapid-phase relaxation with L-NAME was reversed by L-arginine ($1{\times}10^{-3}M$) but not by D-arginine($1{\times}10^{-3}M$). Methylene blue($4{\times}10^{-5}M$) reduced the rapid-phase relaxation. Exogenous No(ExoNO, $1{\times}10^{-5}-1{\times}10^{-4}M$) induced dose-dependent relaxations of PRP muscle. Oxyhemoglobin($5{\times}1^{-5}M$) blocked the relaxation induced by ExoNO and inhibited EFS-induced relaxation. Hydroquinone($1{\times}10^{-4}M$) also abolished the relaxation induced by ExoNO, but did not affect EFS-induced relaxation. L-NAME resistant slow-phase relaxation to EFS was inhibited by ${\alpha}$-chymotrypsin(2.5 U/ml). Both methylene blue($4{\times}10^{-5}M$) and Nethylmaleimide($1{\times}10^{-4}M$) reduced the slow-phase relaxation by EFS. [4-Cl-D-$Phe^6$, $Leu^{17}$]-VIP($3{\times}10^{-6}M$) inhibited the slow-phase relaxation by EFS. External applications of VIP ($1{\times}10^{-7}M$) caused relaxations that were simillar to the L-NAME resistant slow-phase relaxations induced by EFS, and relaxant effects of exogenous VIP were blocked by ${\alpha}$-chymotrypsin(2.5 U/ml).

• Macromolecular Research
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• v.12 no.6
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• pp.559-563
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• 2004

Both the ultrasonic velocity at 3 MHz and the absorption coefficient in the frequency range from 0.2 to 2 MHz were measured for aqueous solutions of poly(sodium 4-styrenesulfonate) over the concentration range from 5 to $25\%$ (by weight). The pulse echo overlap method was employed to measure the ultrasonic velocity over the temperature range from 10 to $90^{\circ}C;$ the high-Q ultrasonic resonator method was used for the measurement of the absorption coefficient at $20^{\circ}C.$ The velocities exhibited their maximum values at ca. 55, 59, 63, 67, and $71^{\circ}C.$ for the 25, 20, 15, 10, and $5\%$ solutions, respectively. The velocity increased with respect to the poly(sodium 4-styrene-sulfonate) concentration at a given temperature. A study of the concentration dependence of the both the relaxation frequency and amplitude indicated that the relaxation at ca. 200 kHz is related to structural fluctuations of the polymer molecules, such as the segmental motions of the polymer chains and that the relaxation at ca. 1 MHz resulted from the proton transfer reactions of the oxygen sites of $SO_3.$ Both the absorption and the shear viscosity increase upon increasing the polymer concentration, but they decrease upon increasing the temperature.

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.57-61
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• 1998

The complex magnetic susceptibility of as-quenched and proton irradiated amorphous ribons of $FE_{81}B_{13.5}Si_{3.5}C_2$ was measured in the frequency range 10 KHz~ 10 MHz. The frequency spectra of real and imaginary parts of susceptibility showed a typical Debye-type relaxation. Relatively high relaxtion frequency, ~3 MHz observed in the present work suggented that domain rotation is involved in the relaxation process. The susceptibility at the low frequency decreased with the irradiation, while that at high frequency increased due to the increasing defect density. The relaxation frequency of domain roation shifted toward higher frequency, due to the increasing pinning force against domain motion by the irradiation.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.377-383
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• 2011

Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.413-416
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• 2002

The dielectric responses of 10 and 40 wt% siloxane-epoxy copolymers were investigated in temperature range near the glass transition of polydimethylsiloxane at which the dielectric transitions were also observed. On the other hand, the pure epoxy did not show any dielectric transition in measurement temperature range -90 to 150 $^{\circ}C.$ The experimental data showed that for the copolymer investigated, the temperature-frequency super-position principle could be applied to the dielectric response. From the Cole-Cole equation, the dielectric relaxation of the 10 wt% siloxane near the glass transition temperature resulted in a broad distribution with ${\beta}=$ 0.19 and the relaxation time at -70 $^{\circ}C$ was 5.3 ${\times}$ $10^{-2}$s. The glass transition temperature, 188 K, was estimated by using WLF relation, which was consistent with the data presented in experiment.