• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.45-50
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• 2021

As the difficulty of flip chip products increases, there is a growing interest in the material of flux, which is safe from the solder wetting and reliability. In the case of no clean flux, there is merit in terms of process efficiency because there is no cleaning process. But Cu migration and delamination can be occurred if the residue remains after the reflow process. In this study, major element materials, solvent and activator, are changed and confirmed effect of non-wet and reliability in the package environment. Stability of materials were secured through storage stability evaluation, and we found out non-wet zero materials through the application of two types of solvent and activator with different boiling point and the increase of activator content. After reliability test, no delamination was found in the plane analysis, which secured the final composition of low residue flux.

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.237-242
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• 2011

The effect of shearing speed on the shear force and energy of Sn-0Ag-0.5Cu solder ball was investigated. Various UBM (under bump metallurgy)'s on Cu pads were used such as ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold; Ni/Pd/Au), ENIG (Electroless Nickel, Immersion Gold; Ni/Au), OSP (Organic Solderability Preservative). To fabricate a shear test specimen, a solder ball, $300{\mu}m$ in diameter, was soldered on a pad of FR4 PCB (printed circuit board) by a reflow soldering machine at $245^{\circ}C$. The solder bump on the PCB was shear tested by changing the shearing speed from 0.01 m/s to 3.0 m/s. As experimental results, the shear force increased with a shearing speed of up to 0.6 m/s for the ENIG and the OSP pads, and up to 0 m/s for the ENEPIG pad. The shear energy increased with a shearing speed up to 0.3 m/s for the ENIG and the OSP pads, and up to 0.6 m/s for the ENEPIG pad. With a high shear speed of over 0 m/s, the ENEPIG showed a higher shear force and energy than those of the ENIG and OSP. The fracture surfaces of the shear tested specimens were analyzed, and the fracture modes were found to have closer relationship with the shear energy than the shear force.

• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.842-851
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• 2009

The long-term reliability of Sn-0.3wt%Ag-0.7wt%Cu solder joints was evaluated and compared with Sn-3.0wt%Ag-0.5wt%Cu under thermal shock conditions. Test vehicles were prepared to use Sn-0.3Ag-0.7Cu and Sn-3.0Ag-0.5Cu solder alloys. To compare the shear strength of the solder joints, 0603, 1005, 1608, 2012, 3216 and 4232 multi-layer ceramic chip capacitors were used. A reflow soldering process was utilized in the preparation of the test vehicles involving a FR-4 material-based printed circuit board (PCB). To compare the shear strength degradation following the thermal shock cycles, a thermal shock test was conducted up to 2,000 cycles at temperatures ranging from $-40^{\circ}C$ to $85^{\circ}C$, with a dwell time of 30 min at each temperature. The shear strength of the solder joints of the chip capacitors was measured at every 500 cycles in each case. The intermetallic compounds (IMCs) of the solder joint interfaces werealso analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the reliability of Sn-0.3Ag-0.7Cu solder joints was very close to that of Sn-3.0Ag-0.5Cu. Consequently, it was confirmed that Sn-0.3Ag-0.7Cu solder alloy with a low silver content can be replaced with Sn-3.0Ag-0.5Cu.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.31-35
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• 2022

Recently, with the 4th industrial revolution, the demand for high-density semiconductors for large-capacity data processing is increasing. Researchers are interested in researching the reliability of surface mount technology (SMT). In this study, the effect of PCB pad design on assembly and adhesion reliability of passive component was analyzed using design of experiment (DOE). The DOE method was established using the pad length, width, and distance between pads of the PCB as variables. The assembly defect rate of the passive element after the reflow process was derived according to the misplacement direction of the chip resistor. The shear force between the passive element and the PCB was measured using shear tests. In addition, the shape of the solder according to the pad design was analyzed through cross-sectional analysis.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.35-42
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• 2024

Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.35-39
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• 2018

In order to improve the coupling efficiency, a collimator lens that collects the light emitted from the laser diode at a wide angle to the core of the optical fiber is essential. Glass mold method using a mold is widely used as a collimator lens currently used. Although this method is inexpensive to produce, it is difficult to form precisely and quality problems such as spherical aberration. In this study, the precision of surface processing was improved by replacing the existing glass mold method with the semiconductor process, and the material of the lens was changed to silicon suitable for the semiconductor process. The semiconductor process consists of a photolithography process using PR and a dry etching process using plasma. The optical coupling efficiency was measured using an ultra-precision alignment system for the evaluation of the optical characteristics of the silicon lens. As a result, the optical coupling efficiency was 50% when the lens diameter was $220{\mu}m$, and the optical coupling property was 5% or less with respect to the maximum optical coupling efficiency in the lens diameter range of $210-240{\mu}m$.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.289-299
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• 2005

The ball shear force was investigated in terms of test parameters, i.e. displacement rate and probe height, with an experimental and non-linear finite element analysis for evaluation of the solder joint integrity in area array packages. The increase in the displacement rate and the decrease in the probe height led to the increase in the shear force. Excessive probe height could cause some detrimental effects on the test results such as unexpected high standard deviation and probe sliding from the solder ball surface. The low shear height conditions were favorable for assessing the mechanical integrity of the solder joints. The mechanical and electrical properties of the Sn-37Pb/Cu and Sn-3.5Ag/Cu BGA solder joints were also investigated with the number of reflows. The total thickness of the intermetallic compound (IMC) layers, consisting of Cu6Sn5 and Cu3Sn, was increased as a function of cubic root of reflow time. The shear force was increased up to 3 or 4 reflows, and then was decreased with the number of reflows. The fracture occurred along the bulk solder, in irrespective of the number of reflows. The electrical resistivity was increased with increasing the number of reflows.