• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.281-285
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• 2011

We investigated the effects of tunneling current on scanning tunneling microscopy (STM) images of 1-octanethiol (OT) and 1-decanethiol (DT) self-assembled monolayers (SAMs). At a low tunneling current, the domain boundaries and ordered alkanethiol molecules were clearly resolved. As the tunneling current was increased at a constant bias voltage, however, the STM images showed disordered structures of the OT and DT SAMs. As the tunneling current was reduced back to low values, the ordered structures of the alkanethiol molecules reappeared. The reversibility of the process suggests that the sulfur head groups did not rearrange under any of the tunneling current conditions. On the basis of our observations, which are inconsistent with the standard model for STM imaging of molecules on metal surfaces, we consider the STM imaging mechanism in terms of a two-region tunneling junction model.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.1
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• pp.24-28
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• 2009

In this study, we investigated whether the anhysteretic demagnetization process would be applicable to remove a complicated magnetization of a steel tube as a part of the experimental earlier study for a deperming of naval vessel. The magnetic tube used in this study was a 10cm-long and 1cm-diameter steel tube, and magnetized with a E-shape ferrite core to form a nonuniform magnetization in it. In the anhysteretic demagnetization process, a dc magnetic field applied along the longitudinal direction of the tube decreased from ${\pm}$3kA/m to zero-field with the step of ${\pm}$300A/m. At the same time, an ac bias magnetic field with the frequency of 60Hz and the field intensity of 300A/m was excited along the circumstantial direction of the tube. It was found that the anhysteretic process was useful to demagnetize a small-object like a steel tube from the experimental results showing the residual magnetization reduced over 90%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.8B
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• pp.677-686
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• 2012

In the presence of a high power cellular network, picocells are added to a Macro-cell layout aiming to enhance total system throughput from cell-splitting. While because of the different transmission power between macrocell and picocell, and co-channel interference challenges between the existing macrocell and the new low power node-picocell, these problems result in no substantive improvement to total system effective throughput. Some works have investigated on these problems. Pico Cell Range Expansion (CRE) technique tries to employ some methods (such as adding a bias for Pico cell RSRP) to drive to offload some UEs to camp on picocells. In this work, we propose two solution schemes (including cell selection method, channel allocation and serving process) and combine new adaptive frequency partitioning reuse scheme to improve the total system throughput. In the simulation, we evaluate the performances of heterogeneous networks for downlink transmission in terms of channel utilization per cell (pico and macro), call blocking probability, outage probability and effective throughput. The simulation results show that the call blocking probability and outage probability are reduced remarkably and the throughput is increased effectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.458-467
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• 1994

It has been well known that the assumption of full state availability is one of the most important restrictions to the practical realization of VSCS. And several attempts to alleviate the assumption had been made. however, it is not easy to find a positive scheme among them. Recently, an output feedback variable structure control system(OFVSCS) was proposed and the effectiveness of the scheme was validated for the disturbance free systems. The purpose of this study is to propose a robust OFVSCS that have the robust properties against process parameter variations and external disturbances by extending the basic OFVSCS and to evaluate its control performances. The ROFVSES is composed of dynamic switching function and output feedback switching control inputs that are constructed by the use of the unknown vector modeling technique. With the proposed schems, existence of sliding mode is guaranteed and any nonzero bias can be suppressed in the face of disturbances and process parameter variations as far as well-known matching condition is satisfied. Due to the fact that the ROFVSCS is driven by small number of measured informations, the practical application of VSCS for the systems with unmeasurable states and for high order systems, the conventional schemes cannot be applied, is possible with the proposed scheme. It is noticeable that the implementation cast of VSCS can be considerably reduced without sacrifice of control performances by adopting ROFVSCS since there is no need to measure the states with high measurement cost.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.127-130
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• 2003

An RSFQ (Rapid Single Flux Quantum) counter can be used as a frequency divider that was an essential part of a programmable voltage standard chip. The voltage standard chip is composed of two circuit parts, a counter and an antenna Analog signal of tens to hundreds ㎓ may be applied to a finline antenna part. This analog signal can be converted to the stream of SFQ voltage pulses by a DC/SFQ circuit. The number of voltage pulses can be reduced by 2n times when they pass through a counter that is composed of n T Flip-Flops (Toggle Flip-Flop). Such a counter can be used not only as a frequency divider, but also to build a programmable voltage standard chip. So, its application range can be telecommunication, high speed RAM, microprocessor, etc. In this work, we have used Xic, WRspice, and L-meter to design an RSFQ counter. After circuit optimization, we could obtain the bias current margins of the T Flip-Flop circuit to be above 31％ Our RSFQ counter circuit designs were based on the 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology.

• Journal of Sasang Constitutional Medicine
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• v.14 no.3
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• pp.7-16
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• 2002

Purpose The goal of this study tried to provide aging and life span in Sasang Constitutional Medicine. Methods It was researched Master Dong-Mu's documentary records about aging and the life span represented by ${\ulcorner}$Dongyi Soose Bowon Sasang Chobongyun${\lrcorner}$ and ${\ulcorner}$Dongyi Soose Bowon${\lrcorner}$ published in 1901. Results & conclusion 1. A principal of regimen according to Sasang Constitutional Medicine isn't medicational method but non-medicational method. There are control mind and upright oneself. 2. Dong-Mu's the views of the span of life represented by 'Inherent vitality' that a term means health promoting and forecasting length of the life. He also emphasizied a natural power of recovery from damaged vitality. 3. Greed is reduced one's lifetime. It is originated by bias for 'joy-anger -sorrow-pleasure'. The other example is 'Liquor-Sex-Property- Authority'. 4. The way of prolonging lifetime what managed small visceral intestines through constitutional upright oneself. This is found on pathology, care of health and constitutional 'Knowledge and Deed'.

• Journal of electromagnetic engineering and science
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• v.4 no.2
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• pp.87-92
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• 2004

A millimeter-wave distributed frequency doubler has been designed with distributed block and frequency tunable output reflectors. The simulated conversion loss of 9.5 ㏈ to 7.7 ㏈ from 54.6 ㎓ to 62.4 ㎓ output frequencies is achieved with fundamental and third harmonic signal rejections of more than 10 ㏈c. The fabricated chip has the size of 1.2 mm${\times}$1.0 mm. Some measured results of frequency and bias dependent characteristics are presented for the fabricated PHEMT MMIC frequency doubler. The designed doubler has two transistors, and if one of the transistors fails the doubler unit still operates with reduced gain. The failure effect of the PHEMT has been simulated, and compared to the measured data of which one PHEMT is not operating properly.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.315-318
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• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.433-435
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• 1993

The purpose of this study is to propose a robust OFVSCS that have the robust properties against process parameter variations and external disturbances by extending the basic OFVSCS and to evaluate its control performances. The ROFVSCS is composed of dynamic switching surfaces and output feedback switching control inputs that are constructed by the use of the unknown vector modeling technique. With the proposed scheme. existence of sliding mode is guaranteed and any nonzero bias can be suppressed in the face of disturbances and process parameter variations as far as well-known matching condition is satisfied. Due to the fact that the ROFVSCS is driven by small number of measured information, the practical application of VSCS for the systems with unmeasurable states and for high order systems. that conventional schemes cannot be applied, is possible with the proposed scheme. It is noticeable that implementation cost or VSCS can be considerably reduced without sacrifice of control performances by adopting ROFVSCS since there is no need to measure the states with high measurement cost.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.