• Pediatric Infection and Vaccine
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• 제24권3호
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• pp.134-140
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• 2017

목적: 중증복합면역결핍증(severe combined immunodeficiency [SCID])은 일차면역결핍증 중 가장 심각한 형태의 질병이다. 국내에서 SCID 선별검사를 확립하기 위하여, 신생아에게 T-cell receptor excision circle (TREC)/${\kappa}$-deleting recombination excision circle (KREC) 선별검사를 시행하고, 부모에게 인식도를 조사하였다. 방법: 혈액 검체에서 TREC/KREC을 multiplex 실시간중합효소연쇄반응으로 분석하였다. 부모에게 설문조사를 실시하였다. 결과: 141명의 신생아가 선별검사에 참여하였고, 140명(99.3%)이 첫 검사에서 TREC/KREC 양성이었으며, 한 명(0.7%)은 처음에 음성이었으나, 추후 양성으로 확인되었다. 인식도 조사에는 84% (141/168)는 SCID 선별검사가 국내에서도 시행되어야 한다고 답변했다. 결론: 본 연구에서는 국내에서 처음으로 신생아 SCID 선별검사와 인식도 시행되었으며, SCID 선별검사가 국내 임상에 적용될 수 있을 것으로 보인다.

• 상하수도학회지
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• 제27권1호
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• pp.49-58
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• 2013

A selected halogenated organic contaminant, monochlorophenol was successfully degraded by photocatalytic reaction in a circulating batch system. The photocatalytic degradation in most cases follows first-order kinetics. The photocatalytic reaction rate increased in the $TiO_2$ dosage range of 0.1 g/L to 0.4 g/L, then decreased with further increase of the dosage. Also the degradation rate increased over the range of the retention time from 0.49 min. to 0.94 min., then decreased with further increase of the retention time in the circulating batch reactor. The photocatalytic activity was enhanced by addition of metal impurities, platinum(Pt) and palladium(Pd) onto the photocatalysts. The photocatalytic degradation rate increased with the increase of Pt and Pd in the content range of 0 to 2wt %, then decreased with further increase of the metal contents. Therefore the metal loading to $TiO_2$ influence the degradation rate of a halogenated organic compound by acting as electron traps, consequently reducing the electron/positive hole pair recombination rate.

• 공업화학
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• 제10권1호
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• pp.35-40
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• 1999

Hard segment 함량이 35%와 53%로 서로 다른 두 개의 열가소성 폴리우레탄 시료 (각각 TPU-35와 TPU-35)와 이들을 70/30, 50/50, 30/70 wt%로 용융 블렌딩한 조성들이 annealing 온도와 시간에 따라 변화할 수 있는 유리전이온도와 용융피이크, 분자량 및 분자량 분포도의 변화를 관찰하였다. TPU의 $T_g$는 hard segment 함량이 많을수록 높은 값을 보였으며 annealing 온도와 시간에 따라 hard microdomain 구조의 미약한 관계에 의한 용융피이크의 크기와 온도 등이 변하였다. 이는 annealing에 의한 열이 long-range 혹은 short-range segmental motion의 거동, 비결정 microphase 구조의 order-disorder 전이, domain의 크기 및 결정구조의 질서도 등 여러 가지 복합적인 영향을 끼친 결과로 사료된다. 미세 결정의 용융 결과로 나타나는 $T_3$단일 피이크만이 존재하는 annealing 온도는 TPU-35, TPU-44와 TPU-53에 대해 각각 130, 170 및 $180^{\circ}C$이었다. Annealing 온도와 시간에 따른 분자량 및 분자량 분포도 변화 측정에서 TPU-35는 $135^{\circ}C$에서, TPU-44(TPU-35/TPU-53=50/50 블랜드)는 $170^{\circ}C$, 그리고 TPU-53은 $180^{\circ}C$에서 수평균 및 중량평균 분자량의 증가와 더불어 polydispersity(PI)는 감소를 보였다. 이 변화는 같은 조건의 annealing 온도에 따른 용융피이크 변화에서 $T_3$단일 피이크만 남게 되는 annealing온도와 일관성을 보이고 있는데, 이는 이들 시료가 특정한 annealing 온도에서 chain dissociation과 recombination이 동시에 일어나므로써 빚어진 결과로 추측된다.

• 한국진공학회지
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• 제15권3호
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• pp.301-307
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• 2006

P-modulation doping된 In(Ga)As/InGaAsP 양자점에서의 decay time 특성을 undoped 양자점 시료와의 비교를 통해 살펴보았다. 10 K 에서의 photoluminescence (PL) 세기는 doping 된 양자점이 doping되지 않은 양자점에 비해 약 10배 정도 약하게 나왔다. 또한 Time resolved PL (TR-PL) 실험을 통해 얻은 양자점 시료의 기저상태 PL peak 에서의 decay time은 doping된 양자점이 doping 되지 않은 양자점에 비해 매우 짧게 나왔다. 이러한 PL 세기와 decay time 특성을 통해서 본 연구에서 측정한 doping 된 양자점의 경우에는 doping에 의해 결함이 증가하게 되고, 그로 인해 운반자의 비발광 경로가 증가하게 되어 doping 된 양자점의 경우에 decay time이 짧게 나타나는 것으로 분석하였다.

• 전자공학회논문지A
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• 제32A권11호
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• pp.52-62
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• 1995

We developed a two-dimensional numerical simulator which can analyze the electrical as well as optical characteristics and evaluate the detection performances of self-signal processing infrared detectors. It solves the poisson equation and the electron, hole current continuity equations including the optical generation and recombination models. To speed up convergency rate. the Newton algorithm is used. Automatic triangular grid generator make it easy to simulate the devices with the various read-out geometries. This simulator can show the variation of spatial resolution which is caused by the transit velocity and transit time dispersion in bifurcate and horn geometries respectively. Also, we calculated the responsivity, noise, and detectivity in respect of the applied electric field and background field-of-view. The results obtained from simulation correspond to those of experiments, and it is verified that horn read-out geometry has the superior spatial resolution and detection performance to bifurcate geometry.

• 전기학회논문지
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• 제59권12호
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• pp.2230-2234
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• 2010

This paper deals with the change of surface potential decay, surface resistivity, contact angle and XPS of ultraviolet-treated PET films. From the experimental results on the surface potential decay of UV degraded-samples, it was found that the accumulation of charge is decreased and the surface potential decay time is shortened. Also, from the result of XPS, it was found that the changes affected by the surface degradation of PET film were caused by the generation of carboxyl groups through the chain decomposition and recombination with oxygen molecules in the air.

• 한국안전학회지
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• 제13권4호
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• pp.172-179
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• 1998

The effects of $^{60}Co\;{\gamma}-Ray$ irradiation on TSC characteristics of TFE type polytetrafluoroethylene(PTFE) were investigated. The $\alpha$ peak on TSC curve of PTFE was decreased, while the $\beta$ peak was reversely increased by the increasing of $\gamma$-irradiation doses up to 80 krad(0.8 kGy). Moreover, $\alpha$ and $\beta$ peaks on TSC curve of the irradiated PTFE are changed with the increasing of the forming temperature and forming electric field. In annealing the irradiated PTFE specimens at room temperature in air, it was shown a continuous recovery of TSC characteristics with time, which is assumed the traped charge carriers are liberated from the shallow traps and undergoes a recombination process during room temperature decay.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2011

Reliability and degradation mechanism of conventional phosphor-converted white GaN-based light-emitting diodes (LEDs) were investigated. Under electro-thermal stress condition, the optical output degraded rapidly at the initial stress time accompanied by the change of chromatic properties. This could be attributed to the optical degradation of packaged materials, in particular, the browning of encapsulants and the darkening of reflective packages. At longer stress times, the optical output gradually decreased according to the degree of the reverse leakage currents, namely, the generation ofnonradiative recombination defects. This indicates that the optical degradation of white LEDs are dominated by the darkening of packaged materials and the generation of defects depending on the injection current and ambient temperatures. Using analyses of electroluminescence spectra, optical microscopy, electrical, optical, and thermal properties, optical degradations of white LEDs are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1457-1459
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• 2001

This paper deals with the change of surface Potential decay, surface resistivity, contact an91e and XPS of ultraviolet-treated PET films. From the experimental results on the surface Potential decay of UV degraded-samples, it was found that the accumulation of charge is decreased and the surface potential decay time is shortened. Also, from the result of XPS, it was found that the changes affected by the surface degradation of PET film were caused by the generation of carboxyl groups through the chain decomposition and recombination with oxygen molecules in the air.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.195-197
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• 2002

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. Photoluminescence(PL) spectra of the synthesized CdTe QDs revealed the intensity of PL peaks was stronger as the condensation time was longer. This result was thought because annealing effect by thermal energy transferred during condensation eliminated defects which act as traps and recombination centers in CdTe particle. PL intensity has stron dependence of Te precursor concentration. It confirmed the ratio of Te ion to Cd ion added during synthesis affected the particle size and size distribution of the CdTe QDs. Finally, the synthesized CdTe QDs were identified to be cubic structured CdTe quantum dots by X-ray diffraction(XRD).