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Carrier Dynamics of P-modulation Doped In(Ga)A/InGaAsP Quantum Dots  

Jang, Y.D. (Department of Physics, Chungnam National University)
Park, J. (Department of Physics, Chungnam National University)
Lee, D. (Department of Physics, Chungnam National University)
Hong, S.U. (Electronics and Telecommunication Research Institute)
Oh, D.K. (Electronics and Telecommunication Research Institute)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.3, 2006 , pp. 301-307 More about this Journal
Abstract
We have investigated optical properties of p-modulation doped In(Ga)As quantum dots (QDs) on InP substrate with a comparison with the undoped QDs. Photoluminscence (PL) intensity of doped QDs at 10 K was about 10 times weaker than that of undoped QD sample. The decay time of doped QD sample at its PL peak, obtained from the time-resolved PL (TR-PL) experiment at 10 K, was very fast compared to that of undoped sample. We interpret that this fast decay time of the doped QD sample comes from the addition of non-radiative recombination paths, which are originated from the doping-related defects.
Keywords
Quantum dots; Modulation doping; Decay time;
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