• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.77-84
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• 2005

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.206-211
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• 2015

We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

• The Korean Journal of Zoology
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• v.37 no.2
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• pp.232-239
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• 1994

RecA protein plans a central role in homologous recombination and DNA repair in Escherichia cofi (E. colD. The function 8nd structure of this protein are universal in prokarvotes and also conserved in eukaryotes such as yeast. The RecA-like protein with 74 lInDa in size has already been identified and purified from a fission yeast Schizosaccharomyces pombe (5. pommel (Lee, 19911. From this study it was revealed that the RecA-like protein of 5. pombe was highly inducible to various DNA damaging agents and inhibitors of nucleotide pool svnthesizins enzymes. The cellular level of the 5. pombe RecA-like protein wi,u markedly increased, upto 5- to 10-fold, by treatment with various DNA-damains agents including ultraviolet (UV) light, methyl methanesulfonate WS),4-nitroquinoline-1-oxide (4-NQO), and mitomycin-C (MMC), similar to E. cofi RecA protein. Interestingly, the protein level was also increased by inhibitors of nucleotide pool forming enzlwnes such as methotrexate (MTX) and hvdroxvurea (HU). The most effective doses for the inducibility of 4-NQO, MMS, W, MMC, MTX, and HU were 0.2 Ug/ml, 30 mM, 200 J/ma, 0.4 $\mus/ml,$ 1 Ug/ml, and 100 mM, respectively. The range of effective duration time for the inducibilitv of RecA-like protein was from 270 to 450 mins. These results suggest that the 5. pombe RecA-like protein also platys an imortant role in cellular responses to DNA damage as in E. coli system.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.463-466
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• 2008

We report a method to increase the surface area of the titania films used as the anodes of dye-sensitized solar cells (DSSCs) by applying additional titania-coating. The modification was achieved by spin-coating a coating solution that contained a surfactant with a titania source onto the titania electrodes, followed by calcination. Previous similar attempts without a surfactant all reported decreased surface areas. We fabricated DSSCs by using the modified titania films as the anode and measured their performances. The increased surface area increased the amount of adsorbed dyes, which resulted in increased current densities. At the same time, the titania-coating increased both the open-circuit voltage and the current density by reducing the charge-recombination rates of the injected electrons, similar to the results of literatures. Therefore, our method shows an additional mechanism to increase the current density of DSSCs in addition to the other mechanisms of surface modifications with titania-coatings.

• STI Policy Review
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• v.1 no.1
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• pp.93-109
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• 2010

Over the last decade, some Korean enterprises have emerged to become global players in their specialized products. How have they achieved such tremendous technological progress in a short period of time? This paper explores that question by examining the characteristics of technological innovation activities at major Korean enterprises. The paper begins with a brief review of the stages of economic growth and science and technology development in Korea. Then, the existing literature, explaining the Korean innovation model, is analyzed in order to establish a new framework for the Korean innovation model. Specifically, Korean firms have experienced three sequential phases, and thus, the Korean model, at the firm level, can be coined as "path-following," "path-revealing," and "path-creating." Then, the stylized facts in the first phase (path-following) and the second phase (path-revealing) are discussed, in the context of empirical evidence from the areas of memory chips, automobiles, shipbuilding, and steel. In terms of technology development, the Korean model has evolved as "collective learning" in the first phase, "collective recombination" of existing knowledge and technology in the second phase, and is assumed as "collective creativity" in the third phase. Ultimately, all three can be classified as "collective creation". Korean firms now face a transition in the modes of technological innovation in order to efficiently implement the third phase. To achieve remarkable progress again, as they did in the past, and to sustain the growth momentum, Korean firms should challenge new dimensions such as creative technological ideas, distinctive technological capabilities, and unique innovation systems -- all of which connote 'uniqueness'. Finally, some lessons from the Korean technological innovation experience are addressed.

• Molecules and Cells
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• v.19 no.3
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• pp.445-451
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• 2005

Activation-induced cytidine deaminase (AID) is needed for Ig class switch recombination (CSR). We explored the effect of LPS on the expression of AID during B cell differentiation, and the role of AID in IgA isotype expression. In normal spleen B cells, LPS increased AID transcription up to 48 h post-stimulation, i.e. around the time of Ig CSR. TGF-${\beta}1$ and AID were required for IgA expression, and LPS contributed to $TGF{\beta}1$-induced IgA production largely by inducing AID. Interestingly, LPS repressed AID transcription in $sIgA^+$ B cells but still stimulated IgA production mainly by increasing the rate of IgA secretion. Our data indicate that LPS contributes to $TGF{\beta}1$-induced IgA isotype expression in at least two ways: by stimulating AID transcription before CSR and by enhancing the IgA secretion rate after CSR.

• Bulletin of the Korean Chemical Society
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• v.23 no.12
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• pp.1737-1743
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• 2002

We have studied the dynamics of energy-rich hydrogen molecules produced on a graphite surface through H(g) + H(ad)/C(gr) → $H_2$ + C(gr) at thermal conditions mimicking the interstellar medium using a classical trajectory procedure. The recombination reaction of gaseous H atom at 100 K and the adsorbed H atom on the interstellar graphite grains at 10 K efficiently takes place on a subpicosecond time scale with most of the reaction exothermicity depositing in the product vibration, which leads to a strong vibrational population inversion. The molecules produced in nearly end-on geometry where H(g) is positioned below H(ad) rotate clockwise and are more highly rotationally excited. but in low-lying vibrational levels. The rotational axis of most of the molecule rotating clockwise is tilted from the surface normal by more than 30°, the intensity peaking at 35°. The molecules produced when H(ad) is close to the surface rotate counter-clockwise and are weakly rotationally excited, but highly vibrationally excited. These molecules tend to align their rotational axes parallel to the surface. The number of molecules rotating clockwise is eight times larger than that rotating counter-clockwise.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.142-145
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• 2018

In this paper, we present a design technique for the suppression of common-mode(CM) noise in switched-mode power supply boards using the segmentation method. By applying the segmentation method, the example structure is decomposed into two segments with decoupling capacitors and a recombination matrix is extracted for the segments. The effects of the decoupling capacitor on CM noise suppression are examined. The simulation time is significantly reduced on using the segmentation method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.