• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.419-422
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• 2004

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.4
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• pp.310-318
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• 2015

In this paper, dual-port eFuse OTP (one-time programmable) memory cells with smaller cell sizes are used, a single VREF (reference voltage) is used in the designed eFuse OTP IP (intellectual property), and a BL (bit-line) sensing circuit using a S/A (sense amplifier) based D F/F is proposed. With this proposed sensing technique, the read current can be reduced to 3.887mA from 6.399mA. In addition, the sensing resistances of a programmed eFuse cell in the program-verify-read and read mode are also reduced to $9k{\Omega}$ and $5k{\Omega}$ due to the analog sensing. The layout size of the designed 32-bit eFuse OTP memory is $187.845{\mu}m{\times}113.180{\mu}m$ ($=0.0213{\mu}m2$), which is confirmed to be a small-area implementation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.687-691
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• 2011

In this paper, we design an 8-bit eSuse OTP (one-time programmable) memory in consideration of EM (electro-migration) and eFuse resistance variation based on a $0.18{\mu}m$ generic process, which is used for an analog trimming application. First, we use an external program voltage to increase the program power applied an eFuse. Secondly, we apply a scheme of precharging BL to VSS prior to RWL (read word line) activation and optimize read NMOS transistors to reduce the read current flowing through a non-programmed cell. Thirdly, we design a sensing margin test circuit with a variable pull-up load out of consideration for the eFuse resistance variation of a programmed eFuse. Finally, we increase program yield of eFuse OTP memory by splitting the length of an eFuse link.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.16 no.1
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• pp.43-47
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• 1980

The author designed and tested the high sensitive three-phase power factor meter and relay circuit, and dealt with the circuit to detect the phase of the current and the voltage. An operational amplifier comparator circuit and two single-phase transformers are used to control and detect the phase angle between the current and the voltage. The results obtained are as follows: 1. Converting the sine wave input current into the constant amplitude rectangular wave form by using a transistor chopper circuit, the power factor can be measured precisely over the load current of 0.08 A. 2. Using the moving coil type current meter, the power factor meter can be read in uniform . scale all over the range. 3. Using the three-phase power factor meter, the power factor relay which works at any power factor can be made.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.176-181
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• 2001

As the data rate between chip-to-chip gets high, the skin effect and load of pins deteriorate noise margin. With these, noise disturbances on the bus channel make it difficult for receiver circuits to read the data signal. This paper has proposed a new pre-emphasis driver circuit which achieves wide noise margin by enlarging the signal voltage range during data transition. When data is transferred from a memory chip to a controller, the output boltage of the driver circuit reaches the final values through the intermediate voltage level. The proposed driver supplies more currents applicable to a packet-based memory system, because it needs no additional control signal and realizes very small area. The circuit has been designed in a 0.18 ${\mu}m$ CMOS process, and HSPICE simulation results have shown that the data rate of 1.32 Gbps be achieved. Due to its result, the proposed driver can achieved higher speed than conventional driver by 10%.

• Journal of the Korea Computer Industry Society
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• v.7 no.3
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• pp.205-215
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• 2006

In this paper, a method how to make Programmable Logic Array (PLA) design and inspection of circuit relative to recent 64bit microprocessor simple and easy was discussed. A design method using Random Access Memory (RAM), Read Only Memory (ROM) and PLA has been settled down in Very Large Scale Integrated Circuit (VLSI) and logical design, modifying circuit and inspection are easy in PLA so it holds fairly good advantages in the aspect of performance and cost. It is expected PLA will also occupy an important position as a basic factor in designing VLSI in the future.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.7A
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• pp.1090-1098
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• 1999

In this paper ERP-4 viterbi decoder for magnetic disk read channel is designed. The viterbi decoder consists of ACS circuit, path memory circuit, minimum detection circuit, and output selection circuit. In the viterbi decoder the number of state is reduced from 8 to 6 using (1,7) RLL codes and modulo comparison based on 2's complement arithmetic is applied to handle overflow problem of ACS module. Also to determine the correct symbol values in nonconvergent condition of path memory, pipelined minimum detector which determines path with minimum state metric is used. The EPR-4 viterbi decoder is designed using 0.35${\mu}{\textrm}{m}$ CMOS technology and consists of about 15,300 transistors and has 250 Mbps data rates under 3.3 volts.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.1
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• pp.46-56
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• 1991

In this paper, 16word X 8bit Content Addressable and Reentrant Memory(CARM) is described. This device has 4 operation modes(read, write, match, reentrant). The read and write operation of CARM is like that of static RAM, CARM has the reentrant mode operation where the on chip garbage collection is accomplished conditionally. Thus function can be used for high speed matching unit of dynamic data flow computer. And CARM also can encode matching address sequentially according to therir priority. CARM consists of 8 blocks(CAM cell, Sequential Address Encoder(S.A.E). Reentrant operation. Read/Write control circuit, Data/Mask Register, Sense Amplifier, Encoder. Decoder). Designed DARM can be used in data flow computer, pattern, inspection, table look-up, image processing. The simulation is performed using the QUICKSIM logic simulator and Pspice circuit simulator. Having hierarchical structure, the layout was done using the 3{\;}\mu\textrm{m} n well CMOS technology of the ETRI design rule.

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.115-119
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• 2022

A readout circuit for a mercury-cadmium-telluride (MCT)-amplified mid-wave infrared (IR) photodetector was realized and applied to noncontact chemical agent detectors based on a quantum cascade laser (QCL). The QCL emitted 250 times for each wavelength in 0.2-㎛ steps from 8 to 12 ㎛ with a frequency of 100 kHz and duty ratio of 10%. Because of the nonconstant QCL emission power during on-duty, averaging the photodetector signals is essential. Averaging can be performed in digital back-end processing through a high-speed analog-to-digital converter (ADC) or in analog front-end processing through an integrator circuit. In addition, it should be considered that the 250 IR data points should be completely transferred to a PC during each wavelength tuning period of the QCL. To average and minimize the IR data, we designed a readout circuit using the analog front-end processing method. The proposed readout circuit consisted of a switched-capacitor integrator, voltage level shifter, relatively low-speed analog-to-digital converter, and micro-control unit. We confirmed that the MCT photodetector signal according to the QCL source can be accurately read and transferred to the PC without omissions.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.