• 생태와환경
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• 제49권1호
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• pp.1-10
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• 2016

산업 및 기술의 발달과 인간 활동의 증가로 인해 자연적인 질소 순환의 균형이 무너지고 다량의 질소가 대기, 토양 및 물 환경 생태계에 과잉으로 존재하게 되었다. 이로 인한 과잉의 반응성 질소화합물이 토양과 물 환경생태계에 영향을 미치고 있는 것을 국내외 문헌과 사례 조사를 통해 확인하고 유역생태계에서 질소화합물로 인한 토양 및 물 환경 생태계의 산성화 영향 감소방안을 제시하였다. 반응성 질소는 대기, 토양 및 물의 여러 매체를 이동하면서 다른 유형으로 전환될 수 있으며 유형 간 상호작용이 일어나기도 한다. 효과적인 질소관리 방안으로 반응성질소 배출원의 다양성 및 유형에 따른 배출량을 규제하는 정책과, 반응성 질소화합물로 인한 토양 및 물 환경생태계의 환경적 피해 (산성화)를 조사 및 평가 (모니터링 및 안전성 지표 적용)하고 복원하는 전략 (예, 화학적 복원 연구 및 개발)이 필요하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 전기학회논문지P
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• 제52권3호
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Bulletin of the Korean Chemical Society
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• 제26권9호
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• pp.1339-1343
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• 2005

The N-inversion energies and nucleophilic ring-opening reactions of N-substituted aziridine compounds are investigated using B3LYP/6-31+$G^*$ methods, where substituents (R) on the nitrogen atom has been H (1), Me (2), Ph (3), Bn (4), CHMePh (5), $CO_2Me$ (6), COPh (7) and $SO_2Ph$ (8). The N-inversion energy with X group are decreased as the following order: R = CHMePh (17.06 kcal/mol) $\gt$ Me (16.97) $\gt$ Bn (16.70) $\gt$ H (16.64) $\gt$ $SO_2Ph$ (12.18) $\gt$ Ph (8.91) $\gt$ COPh (5.75) $\gt$ $CO_2Me$ (5.48). For reactivity of the ring opening toward cyanide ion, the aziridine 6 (R=$CO_2Me$) is shown to be the most reactive one. During the ring opening of aziridine 6 by CN$^{\ominus}$, the torsional OCNC angle becomes near to $180^{\circ}$, where the geometry allows for the effective incorporation of electrons of the nitrogen atom to the C=O bond. It would be a possible driving force for nucleophilic ring opening reaction as well as decreasing the N-inversion energy barrier. Regarding to the regioselectivity, the orientation of nucleophile in ring opening reaction appears to be different in the case of 9 and 10. The results are discussed in terms of steric/electronic effect of the $C_2$-substituents.

• 전자공학회논문지
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• 제51권8호
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• pp.172-177
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• 2014

두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

• Journal of Microbiology and Biotechnology
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• 제16권2호
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• pp.226-231
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• 2006

Several white-rot fungi are able to produce extracellular lignin-degrading enzymes such as manganese peroxidase (MnP), lignin peroxidase (LiP), and laccase. In order to enhance the production of laccase and MnP using Trametes versicolor KCTC 16781 in suspension culture, the effects of major medium ingredients, such as carbon and nitrogen sources, on the production of the enzymes were investigated. The decolorization mechanism in terms of biodegradation and biosorption was also investigated. Among the carbon sources used, glucose showed the highest potential for the production of laccase and MnP. Ammonium tartrate was a good nitrogen source for the enzyme production. No significant difference in the laccase production was observed, when glucose concentration was varied between 5 g/l and 30 g/l. As the concentration of nitrogen source increased, a lower MnP activity was observed. The optimal C/N ratio was 25 for the production of laccase and MnP. When the concentrations of glucose and ammonium tartrate were simultaneously increased, the laccase and MnP activities increased dramatically. The maximum laccase and MnP activities were 33.7 U/ml at 72 h and 475 U/ml at 96 h, respectively, in the optimal condition. In this condition, over 90% decolorization efficiency was observed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• Journal of Korean Society for Atmospheric Environment
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• 제10권E호
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• pp.311-324
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• 1994

The quantitative knowledge of N $O_{\gamma}$ (＝N $O_{x}$ ＋HN $O_3$＋/PAN＋N $O_3$ ＋$N_2$ $O_{5}$ ＋HN $O_2$＋N $O_3$$^{-10}$ ＋organic nitrates＋......)distribution is essential in tropospheric chemistry, especially, especially that related to understanding the processes leading to ozone production. Ambient concentrations of NO, N $O_2$, HN $O_3$ and PAN as well as total N $O_{\gamma}$ were measured during June and early July 1992 at a rural site(Candor, NC), in the central Piedmont region of NC. The measurements of N $O_{\gamma}$ species were made in an effort to provide a comprehensive understanding of nitrogen chemistry and to investigate the total nitrogen budget at the site. N $O_{\gamma}$, N $O_2$, and NO showed diurnal variations with maxima in the morning. The maximum N $O_{\gamma}$ concentration reached was 14.5 ppbv, and the maximum concentrations of NO and N $O_2$ were 5.4 and 7.8 PPbv, respectively. The mean N $O_{\gamma}$ concentration as found to be 2.88$\pm$1.58 ppbv(n=743). The mean concentrations of NO and N $O_2$, were found to be 0.15 $\pm$ 0.29 ppbv(n＝785) and 1.31 $\pm$ 0.99 ppbv(n＝769). Products of photochemical oxidants, (N <$O_{\gamma}$-N $O_{x}$ ), such as HN $O_3$ and PAN, as well as ozone showed diurnal variation with maxima in the afternoon and minima at night The fractions of individual reactive nitrogen species to total N $O_{\gamma}$ were investigated and contrasted to the results from remote marine site and rural continental sites. N $O_{x}$ was the major species to total N $O_{\gamma}$(45%). NO concentrations appeared to be nearly constant whether the Prevailing winds were from continental areas or from oceanic areas. Linear regression of $O_3$ with (N $O_{\gamma}$- N $O_{x}$ )/N $O_{\gamma}$ (i.e. percent N $O_{x}$ converted to the photochemical products of N $O_{\gamma}$) yielded ( $O_3$) ＝25.8 〔 N $O_{\gamma}$-N $O_{x}$ 〕/(N $O_{\gamma}$) ＋27, ( $r^{2}$＝0.58). The regression intercept is interpreted as the ozone back ground (intercept=27ppbv) and the slope suggests that 8.6 molecules of ozone are formed per molecule of N $O_{x}$ oxidized products (when the average N $O_{\gamma}$ concentration, about 3 ppbv at the site, is used). The N $O_{x}$ N $O_{\gamma}$ ratio was used as an indicator of the chemical age of airmasses and the ratio showed strong positive correlations with HN $O_3$( $r^{2}$=0.58), PAN ( $r^{2}$=0.46) and $O_3$( $r^{2}$=0.62). Larger N $O_{\gamma}$ and N $O_{x}$ N $O_{\gamma}$ ratio were found when winds came from continental sides. It may suggest that synoptic meteorological conditions and transport of N $O_{x}$ are important in the distribution of N $O_{\gamma}$ and its relationship with photochemical oxidants at the site.

• 한국표면공학회지
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• 제34권5호
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.