• Title/Summary/Keyword: rapid thermal processing

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Control of Wafer Temperature Uniformity in Rapid Thermal Processing using an Optimal Iterative teaming Control Technique (최적 반복 학습 제어기법을 이용한 RTP의 웨이퍼 온도균일제어)

  • 이진호;진인식;이광순;최진훈
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.358-358
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    • 2000
  • An iterative learning control technique based on a linear quadratic optimal criterion is proposed for temperature uniformity control of a silicon wafer in rapid thermal processing.

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Electrical Properties of Thin $SiO_2$ Film by Rapid Thermal Process (Rapid Thermal Process에 의해 형성시킨 얇은 산화막의 전기적 특성)

  • Lee, Cheol-Jin;Sung, Man-Young;Sung, Young-Kwon
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.246-248
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    • 1994
  • The Electrical properties of thin $SiO_2$ film by rapid thermal processing have been investigated and this film has been compared with thermal $SiO_2$ film by furnace. The RTO(rapid thermal oxide) film annealed in Ar ambient represent more superior properties than thermal $SiO_2$ film by furnace at breakdown field and leakage current. The RTO(rapid thermal oxide) film annealed in $NH_3$ ambient represent more inferior properties than thermal $SiO_2$ film by furnace at electrical properties, but the capacitance was improved 15-25% than the conventional oxide film.

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Improvement of Thermoelectric Properties of Bismuth Telluride Thin Films using Rapid Thermal Processing (Bismuth Telluride 박막의 열전특성 개선을 위한 급속 열처리효과)

  • Kim, Dong-Ho;Lee, Gun-Hwan
    • Korean Journal of Materials Research
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    • v.16 no.5
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    • pp.292-296
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    • 2006
  • Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of $300{\sim}400^{\circ}C$ were carried out during 10 minutes under the reducing atmosphere (Ar with 10% $H_2$). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of $Bi_2Te_3$ films. Recrystallization of $Bi_2Te_3$ phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at $400^{\circ}C$ (about $-128{\mu}V/K$ and $9{\times}10^{-4}\;W/K^2m$, respectively). With further higher temperature ($500^{\circ}C$), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.

N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation (Rapid Thermal Oxidation 기반의 표면 보호막을 이용한 n-type 실리콘 태양전지의 제작과 전기적 특성 분석)

  • Ryu, Kyungsun;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.18-21
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    • 2013
  • $SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

A robust controller design for rapid thermal processing in semiconductor manufacturing

  • Choi, Byung-Wook;Choi, Seong-Gyu;Kim, Dong-Sung;Park, Jae-Hong
    • 제어로봇시스템학회:학술대회논문집
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    • 1995.10a
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    • pp.79-82
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    • 1995
  • The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.

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Fabrication and characteristics of PZT ferroelectric thin films by Sol-Gel processing and rapid thermal annealing (Sol-gel법과 급속 열처리에 의한 PZT 강유전 박막의 제작과 그 특성)

  • 백동수;최형욱;김준한;신현용;김규수;박창엽
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.369-375
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    • 1994
  • In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

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Estimation of Temperature Distribution on Wafer Surface in Rapid Thermal Processing Systems (고속 열처리공정 시스템에서의 웨이퍼 상의 온도분포 추정)

  • Yi, Seok-Joo;Sim, Young-Tae;Koh, Taek-Beom;Woo, Kwang-Bang
    • Journal of Institute of Control, Robotics and Systems
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    • v.5 no.4
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    • pp.481-488
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    • 1999
  • A thermal model based on the chamber geometry of the industry-standard AST SHS200MA rapid thermal processing system has been developed for the study of thermal uniformity and process repeatability thermal model combines radiation energy transfer directly from the tungsten-halogen lamps and the steady-state thermal conducting equations. Because of the difficulties of solving partial differential equation, calculation of wafer temperature was performed by using finite-difference approximation. The proposed thermal model was verified via titanium silicidation experiments. As a result, we can conclude that the thermal model show good estimation of wafer surface temperature distribution.

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Low temperature UV-assisted rapid thermal processing of (Ba,Sr)$TiO_3$ thin films (저온에서 (Ba,Sr)$TiO_3$ 박막의 UV를 이용한 RTP에 관한 연구)

  • Cho, Kwang-Hwan;Kang, Chong-Yun;Yoon, Seok-Jin;Lee, Young-Pak
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.234-234
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    • 2008
  • Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

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Recent Trends in Rapid Thermal Processing Technology (반도체 공정용 급속 열처리 장치의 최근 기술 동향)

  • Kim, Y,K.;Lee, H.M.;Jung, T.J.
    • Electronics and Telecommunications Trends
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    • v.13 no.3 s.51
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    • pp.71-83
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    • 1998
  • 반도체 제조용 웨이퍼의 온도를 측정하고 제어하는 기술의 진보로 열처리 장비 시장에서 점점 더 각광을 받고 있는 급속 열처리(rapid thermal process: RTP) 장치의 최근 기술 동향을 전반적으로 조사 분석하였다. RTP의 장점, 온도 제어 모델링 기술(model-based control), 최근에 개발된 여러 종류의 RTP 시스템 설계 및 이들 각각의 기술적인 문제들이 기술된다. 새롭게 개발된 단일 wafer furnace와 광자 효과를 이용한 rapid photothermal process (RPP)에 관해서도 기술하였다. 아울러 최근 열처리 장비 업체들의 현황과 열처리 장비 시장의 향후 전망에 관해서도 검토하였다.

Characteristics of CIGS Thin Film Photovoltaic Cells with a Change of Rising-Temperature Time in Rapid Thermal Processing (급속열처리장치 승온 조건에 따른 CIGS 박막 태양전지 특성 연구)

  • Jeong, Yong-Min;Park, Chan-Il;Cho, Geum-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.3
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    • pp.107-112
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    • 2013
  • Cu(In,Ga)$Se_2$ (CIGS) thin films were annealed on molybdenium/sodalime glass substrates of $300{\times}300mm^2$ by rapid thermal processing (RTP) with 2-step rising-temperature times in $N_2$ ambient. Morphological property, structural characteristics and chemical composition of the precursor of CIGS thin films were influenced directly with a change of $1^{st}$-step rising-temperature time in RTP whereas there is no significant difference with the different $2^{nd}$-step rising-temperature time (final crystallization temperature). The shorter $1^{st}$-step rising-temperature time in RTP obtained the higher photovoltaic cell efficiency from 7.469% to 8.479% even though the ideal composition in CIGS thin films could not be accoplished in this study.