Estimation of Temperature Distribution on Wafer Surface in Rapid Thermal Processing Systems

고속 열처리공정 시스템에서의 웨이퍼 상의 온도분포 추정

  • 이석주 (연세대학교 기계전자공학부) ;
  • 심영태 (연세대학교 기계전자공학부) ;
  • 고택범 (경주대학교 컴퓨터전자공학부) ;
  • 우광방 (연세대학교 기계전자공학부)
  • Published : 1999.05.01

Abstract

A thermal model based on the chamber geometry of the industry-standard AST SHS200MA rapid thermal processing system has been developed for the study of thermal uniformity and process repeatability thermal model combines radiation energy transfer directly from the tungsten-halogen lamps and the steady-state thermal conducting equations. Because of the difficulties of solving partial differential equation, calculation of wafer temperature was performed by using finite-difference approximation. The proposed thermal model was verified via titanium silicidation experiments. As a result, we can conclude that the thermal model show good estimation of wafer surface temperature distribution.

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