• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.27-34
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• 1992

Tantalum silicide films are prepared from a composite $TaSi_{28}$ target source and subjected to rapid thermal annealing($500-1100^{\circ}C$, 20sec) in Ar ambient. The formation and the properties of tantalum silicides have been investigated by using 4-point probe, x-ray diffraction, scanning electron microscope(SEM), Auger electron spectroscope(AES), and ${\alpha}$-step. It has been found that the sample annealed above $700^{\circ}C$ forms a polycrystalline $TaSi_2$ phase, and grains grow in granular form regardless of the kind of substrates. The mechanism of the formation of tantalum silicide is the nucleation and growth by Ta-Si short range reaction. The tantalum silicide film has the relatively low resistivity($70-72.5{\mu}{\Omega}-cm$) and smooth surface roughness.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1268_1269
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• 2009

This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and $500^{\circ}C$ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about $400^{\circ}C$. For the IZO film treated at $500^{\circ}C$ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately $10^2{\Omega}cm$, $10^{15}cm^{-3}$, $10cm^2/V{\cdot}s$, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.508-512
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• 2002

$2000{\AA}-SiO_2/Si(100)$ and $560{\AA}-Si_3N_4/Si(100)$ wafers, which are 10 cm in diameter, were directly bonded using a rapid thermal annealing method. We fixed the anneal time of 30 second and varied the anneal temperatures from 600 to $1200^{\circ}C$. The bond strength of bonded wafer pairs at given anneal temperature were evaluated by a razor blade crack opening method and a four-point bonding method, respectively. The results clearly slow that the four-point bending method is more suitable for evaluating the small bond strength of 80~430 mJ/$\m^2$ compared to the razor blade crack opening method, which shows no anneal temperature dependence in small bond strength.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.29-33
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• 2000

The amorphous tungsten nitrides, WNx, film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40at%. The amorphous $W_{67}N_{33}$ film was crystallized into low resistivity $\alpha$-tungsten phase with equiaxed grains and excess nitrogen after the rapid thermal annealing for 1min at 1273K, which was similar to the resistivity of the sputtered pure tungsten film. The excess nitrogen was depleted from $\alpha$-tungsten crystals and then segregated at $\alpha$-tungsten/poly-Si interface. The segregated nitrogen has favored the formation of the homogeneous diffusion barrier layer comprised of silicon nitride, $Si_3N_4$, nano-crystals, which undertaken the inhibition of the high resistivity tungsten silicide reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.106-110
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• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.49-50
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• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.