• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.950-958
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• 1988

We have implemented a RTA system using W-halogen lamps and tried to recrystallize the phosphorus ion implanted amorphous silicon on insultor (SOI) taking advantages of seeding window. The purpose of this study is to investigate the possibility of a typical crystalline orientation occurred during the solidifying process of molten amorphous silicon layer. Experimental results show that several twin boundaries are found on the seeding window region after annealing for 15 sec at 1040\ulcorner. These twin boundaries represent that the recrystallization is partialy possible and when the annealing is done at 1150\ulcorner, (100) etch pits with <110> facets are found on the solidified amorphous silicon layer. Consequently, Hall mobility of recrystallized silicon film is measured and the thermal behavior of grain boundary is also observed by SEM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.46-55
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• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1136-1139
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• 2009

Recently, various Ni doping systems and thermal annealing systems have been developed for fabrication of polycrystalline silicon film using SGS (super grain silicon) for medium and largesize AMOLED panels. In this study, we compare the potential of Ni doping systems including ALD (atomic layer deposition), AMD (atmospheric metal deposition), in-line sputter, and crystallization annealing systems including batch type furnace, inline furnace, and RTA (rapid thermal annealing) developed for the SGS method. Additional requirements for those systems to be used for mass production of large AMOLED TVs are suggested based on evaluation results for both poly-Si films and TFT backplanes.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.218-223
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• 2004

P-type $\beta$-FeSi$_2$ with a nominal composition of $Fe_{0.92}Mn_{0.08}Si_2$ powders has been produced by mechanical alloying process. As-milled powders were spray dried and consolidated by atmospheric plasma thermal spraying as a rapid sintering process. As-milled powders were of metastable state and fully transformed to $\beta$-$FeSi_2$ phase by subsequent isothermal annealing. However, as-thermal sprayed $Fe_{0.92}Mn_{0.08}Si_2$ consisted of untransformed mixture of $\alpha$-$Fe_2Si_{5}$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce transformation to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase. Isothermal annealing at $845^{\circ}C$ in vacuum gradually led to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties of $\beta$-$FeSi_2$ materials before and after isothermal annealing were evaluated. Seebeck coefficient increased and electric conductivity decreased with increasing annealing time due to the phase transition from metallic phases to semiconducting phases. Thermoelectric properties showed gradual increment, but overall properties appeared to be inferior to those of vacuum hot pressed specimens.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.