• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.5
• /
• pp.511-515
• /
• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• Korean Journal of Oriental Medicine
• /
• v.14 no.3
• /
• pp.49-56
• /
• 2008

Glehnia littoralis Fr. Schmidt et Miquel is an important medicinal plants in East Asian countries. This plant species naturally distributed in Korea, Japan, China, and Taiwan, but it is a rare plants living in the coastal dune in Korea. To investigate the genetic variation, genetic diversity and genetic evolutionary relationships of 14 different geographical G. littoralis, ITS sequence and random amplified polymorphic DNA (RAPD) were analyzed. On the basis of ITS sequences, it was clearly showed that the ITS1 and ITS2 sequences among 14 populations are identical regardless of geographical origin excepting 2 bp in pair-wise comparison of ITS1. Furthermore, RAPD results also showed that 14 different geographical G. littoralis produce various polymorphic patterns without critical relationship among neighboring regions. These combined results suggest that the geographical variation and genetic evolution of G. littoralis is stable and provide important information on genetic diversity, and conservation of this rare plant species in situ and ex situ.

• Geomechanics and Engineering
• /
• v.36 no.6
• /
• pp.631-640
• /
• 2024

In the traditional slope stability analysis, ignoring the spatial variability of slope soil will lead to inaccurate analysis. In this paper, the K-L series expansion method is adopted to simulate random field of soil strength parameters. Based on Random Limit Equilibrium Method (RLEM), the influence of variation coefficient and fluctuation range on reliability of soil slope supported by micro-pile is investigated. The results show that the fluctuation ranges and the variation coefficients significantly influence the failure probability of soil slope supported by micro-pile. With the increase of fluctuation range of soil strength parameters, the mean safety factor of the slope increases slightly. The failure probability of the soil slope increases with the increase of fluctuation range when the mean safety factor of the slope is greater than 1. The failure probability of the slope increases by nearly 8.5% when the fluctuation range is increased from δ_v=2 m to δ_v =8 m. With the increase of the variation coefficient of soil strength parameters, the mean safety factor of the slope decreases slightly, and the probability of failure of soil slope increases accordingly. The failure probability of the slope increases by nearly 31% when the variation coefficient increases from COV_c=0.2, COV_φ=0.05 to COV_c=0.5, COV_φ=0.2.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.6
• /
• pp.728-732
• /
• 2014

Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

• Communications for Statistical Applications and Methods
• /
• v.18 no.1
• /
• pp.111-118
• /
• 2011

This paper suggests a ratio-cum product estimator of a finite population mean using information on the coefficient of variation and the fcoefficient of kurtosis of auxiliary variate in stratified random sampling. Bias and MSE expressions of the suggested estimator are derived up to the first degree of approximation. The suggested estimator has been compared with the combined ratio estimator and several other estimators considered by Kadilar and Cingi (2003). In addition, an empirical study is also provided in support of theoretical findings.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.365-375
• /
• 2014

This paper proposes an abnormal V-shaped-error-free non-blind deconvolution technique featuring an adaptively segmented forward-problem based iterative deconvolution (ASDCN) process. Unlike the algebraic based inverse operations, this eliminates any operations of differential and division by zero to successfully circumvent the issue on the abnormal V-shaped error. This effectiveness has been demonstrated for the first time with applying to a real analysis for the effects of the Random Telegraph Noise (RTN) and/or Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. It has been shown that the proposed ASDCN technique can reduce its relative errors of RTN deconvolution by $10^{13}$ to $10^{15}$ fold, which are good enough for avoiding the abnormal ringing errors in the RTN deconvolution process. This enables to suppress the cdf error of the convolution of the RTN with the RDF (i.e., fail-bit-count error) to $1/10^{10}$ error for the conventional algorithm.

• Geomechanics and Engineering
• /
• v.38 no.1
• /
• pp.93-106
• /
• 2024

The present paper investigates the spatial variability effect of soil property on the three-dimensional probabilistic characteristics of the bearing capacity factor (i.e., mean and coefficient of variation) of a circular footing resting on clayey soil where both mean and standard deviation of undrained shear strength increases with depth, keeping the coefficient of variation constant. The mean trend of undrained shear strength is defined by introducing the dimensionless strength gradient parameter. The finite difference method along with the random field and Monte Carlo simulation technique, is used to execute the numerical analyses. The lognormal distribution is chosen to generate random fields of the undrained shear strength. In the study, the potential failure of the structure is represented through the failure probability. The influences of different vertical scales of fluctuation, dimensionless strength gradient parameters, and coefficient of variation of undrained shear strength on the probabilistic characteristics of the bearing capacity factor and failure probability of the footing, along with the probability and cumulative density functions, are explored in this study. The variations of failure probability for different factors of safety corresponding to different parameters are also illustrated. The results are presented in non-dimensional form as they might be helpful to the practicing engineers dealing with this type of problem.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.427-435
• /
• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.2
• /
• pp.118-129
• /
• 2010

A lower-threshold-voltage (LVth) SRAM cell with an elevated cell biasing scheme, which enables to reduce the random threshold-voltage (Vth) variation and to alleviate the stability-degradation caused by word-line (WL) and cell power line (VDDM) disturbed accesses in row and column directions, has been proposed. The random Vth variation (${\sigma}Vth$) is suppressed by the proposed LVth cell. As a result, the LVth cell reduces the variation of static noise margin (SNM) for the data retention, which enables to maintain a higher SNM over a larger memory size, compared with a conventionally being used higher Vth (HVth) cell. An elevated cell biasing scheme cancels the substantial trade-off relationship between SNM and the write margin (WRTM) in an SRAM cell. Obtained simulation results with a 45-nm CMOS technology model demonstrate that the proposed techniques allow sufficient stability margins to be maintained up to $6{\sigma}$ level with a 0.5-V data retention voltage and a 0.7-V logic bias voltage.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.20 no.7
• /
• pp.2159-2166
• /
• 1996

The stochastic properties of variation in fatigue crack growth are important in reliability and stability of structures. In this study,the stochastic model for the variation of fatigue crack growth rate was proposed in consideration of nonhomogeneity of materials. For this model, experiments were ocnducted on 7075-T6 aluminum alloy under the constant stress intensity factor range. The variation of fatigue crack growth rate was expressed by random variables Z and r based on the variation of material coefficients C and m in the paris-Erodogan's equation. The distribution of fatigue life with respect to the stress intensity factor range was evaluated by the stochastic Markov chain model based on the Paris-Erdogan's equation. The merit of proposed model is that only a small number of test are required to determine this this function, and fatigue crack growth life is easily predicted at the given stress intensity factor range.