• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• 한국광학회지
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• 제30권4호
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• pp.167-173
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• 2019

본 논문에서는 고출력 광섬유 레이저의 유도 브릴루앙 산란 억제 특성을 분석하기 위하여, 구형파, 사인파, 임의파 조건의 온도구배 기구부를 설계 및 제작하였다. 또한 전광섬유 MOPA (master oscillator power amplifier) 구조의 이터븀 첨가 편광유지 광섬유 증폭기를 제작하였으며, 온도구배 조건별 역반사 스펙트럼 및 출력을 측정하였다. 구형파 조건의 온도구배에 의해 유도 브릴루앙 산란이 가장 효과적으로 억제되었으며, PRBS (pseudo-random binary sequence) 위상변조 조건과 온도구배 간의 유도 브릴루앙 산란 특성에 끼치는 상호 영향성을 분석하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1240-1243
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• 2003

In this paper, an encryption method to share a secret binary image is proposed. It divides the image to be encrypted into an arbitrary number of images and encrypts them using XOR process with different binary random images which was prepared by the means of the XOR process, too. Each encrypted slice image can be distributed to the authenticated ones. However, we transfer the encrypted images to the binary phase masks to strengthen the security power, that means phase masks can not be copied with general light-intensity sensitive tools such as CCDs or cameras. For decryption, we used the Mach-Zehnder interferometer in which linearly polarized two light beams in orthogonal direction, respectively. The experimental result proved the efficiency of the proposed method.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• Journal of Magnetics
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• 제11권4호
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• pp.170-181
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• 2006

Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.8-9
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• 2009

After reviewing the principle of a new display utilizing bent-core liquid crystals, we summarize the advantages and problems of this display. Then we will introduce our effort to overcome these problems mostly by synthesizing new materials. We obtained a variety of newly synthesized compounds showing the $SmAP_R$ phase. Mixing was effective to decrease and widening the temperature range of the $SmAP_R$ phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.103-104
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• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.919-922
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• 2000

A robust optical security technique using ortho-gonally polarized lights in the interferometer is proposed. We use orthogonally polarized lights in order to minimize the noise generated by the refractive index change due to vibration, flow of air, change of temperature etc. To make orthogonally polarized lights the first beam splitter in the Mach-Zehnder interferometer is substituted by a polarizing beam splitter(PBS). Because of incoherence of orthogonally polarized lights, the noise generated by the change of refractive index is minimized. To encrypt an image we use the random partition and the diffusing of pixel. Finally we make Phase-only-filters of each image which is randomly partitioned and diffused pixel by pixel. Simulation results show the proposed system has the ability of encryption and decryption of an image.