• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.861-863
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• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.247-249
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• 2004

Electric systems can be classified into two classes on the basis of the location of its energy source. One system is to be connected with its outside energy source. Obviously, these electric system is limited of its motion range and impossible to operate in the situation without a way to find an energy source nearby. another is to posses the energy source within it. These electric systems are free of motion range limit while their using is limited by the life of source. These limits can be tided over by using passive-type RF communication. RF-ID is a system that Is possible to interchange electricity and data by Radio Frequency to locate and identify various objects including a man.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.35-38
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• 2006

Using the repeaters is indispensable to WiBro services. Repeater types are distinguished by usage, output power and required performance. In the paper, we have studied on the WiBro digital optic repeater design which has excellent performance characteristic than any other repeaters. WiBro has specific characteristic on modulation method TDD(Time Division Duplex)/OFDMA(Orthogonal Frequency Division Multiple Access) so that it demands specified H/W to design WiBro repeater. Switching technique has been introduced because of TDD characteristic in each amplifier on the repeater. Time Advance technique has been considered because of OFDM characteristic among RAS(Radio Access Station) and repeater. In this paper, we have studied on these techniques to increase repeater cell coverage and distance between RAS and repeater.

• ETRI Journal
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• v.32 no.4
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• pp.503-511
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• 2010

WiBro radio frequency (RF) repeater is used for solving the problem of partial shadow areas in the wireless communication field that uses time-division duplexing (TDD) mode. In this paper, a method to efficiently generate TDD signals for WiBro RF repeater is proposed and its digital circuit is implemented. A TDD signal is detected from RF signals transmitted/received to/from RF repeater and then inputted again into the RF repeater, so that it can operate normally. First, the envelope of downlink signals is detected and then clamped to extract the basic form of a TDD signal using an operational amplifier circuit. Next, the TDD signal is generated by restoring and filtering the shape which has been distorted by the wireless channel. The algorithm and system to acquire TDD signal are developed with a goal to have simple but powerful functions with as little cost as possible. The proposed method is implemented as an RF-digital integrated system and verified through the experiments under the same condition as actual WiBro service environment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1275-1284
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• 2010

100 MHz bandwidth and 1 Gbit/s data speed are needed in LTE-advanced for the next generation mobile communication system. Therefore, spectrum aggregation method has been studied recently to extend usable frequency bands. Also bandwidth utilization is increased since vacant frequencies are used to communicate. However, transceiver structure requires the digital RF and SDR. Therefore, frequency synthesizer and PA must operate over wide-bandwidth and RF impairments also increases in transceiver. Uplink of LTE advanced uses DFT-S OFDM using plural power amplifier. The effect of ICI increases in frequency domain of receiver due to phase noise and IQ imbalance. In this paper, we analyze influences of ICI in frequency domain of receiver considering phase noise and IQ imbalance in multiband system. Also, we separate phase noise and IQ imbalance effect from channel response in frequency domain of uplink system. And we propose a method to estimate the channel exactly and to compensate IQ imbalance and phase noise. Simulation result shows that the proposed method achieves the 2 dB performance gain of BER=$10^{-4}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.691-699
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• 2012

In this paper, we present a Vt-DRO with a low phase noise, which is achieved by improving the coupling structure between the dielectric resonator and microstrip line. The Vt-DRO is a closed-loop type and is composed of 3 blocks; dielectric resonator, phase shifter, and amplifier. We propose a mathematical estimation method of phase noise, using the group delay of the resonator. By modifying the coupling structure between the dielectric resonator and microstrip line, we achieved a group delay of 53 nsec. For convenience of measurement, wafer probes were inserted at each stage to measure the S-parameters of each block. The measured S-parameter of the Vt-DRO satisfies the open-loop oscillation condition. The Vt-DRO was implemented by connecting the input and output of the designed open-loop to form a closed-loop. As a result, the phase noise of the Vt-DRO was measured as -132.7 dBc/Hz(@ 100 kHz offset frequency), which approximates the predicted result at the center frequency of 5.3 GHz. The tuning-range of the Vt-DRO is about 5 MHz for tuning voltage of 0~10 V and the power is 4.5 dBm. PFTN-FOM is -31 dBm.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.68-74
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• 2010

A sub-${\mu}$W CMOS Wien-Bridge oscillator for ultra low power (ULP) radio applications is presented. The Wien-Bridge oscillator is based on an non-inverting opamp amplifier with a closed-loop gain $1+R_2/R_1$ as a means of providing necessary loop gain. An additional RC network provides appropriate phase shift for satisfying the Barkhausen oscillation condition at the given frequency of 1/($2{\pi}RC$). In this design, we propose a novel loop gain control method based on a variable capacitor network instead of a rather conventional variable resistor network. Implemented in $0.18{\mu}m$ CMOS, the oscillator consumes only 560 nA at the oscillation frequency of 22 kHz.

• ETRI Journal
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• v.36 no.1
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• pp.42-50
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• 2014

Orthogonal frequency division multiplexing (OFDM) is a modulation technique that allows the transmission of high data rates over wideband radio channels subject to frequency selective fading by dividing the data into several narrowband and flat fading channels. OFDM has high spectral efficiency and channel robustness. However, a major drawback of OFDM is that the peak-to-average power ratio (PAPR) of the transmitted signals is high, which causes nonlinear distortion in the received data and reduces the efficiency of the high power amplifier in the transmitter. The most straightforward method to solve this problem is to use a nonlinear mapping algorithm to transform the signal into a new signal that has a smaller PAPR. One of the latest nonlinear methods proposed to reduce the PAPR is the $L_2$-by-3 algorithm, which is based on the discrete sliding norm transform. In this paper, a new algorithm based on the $L_2$-by-3 method is proposed. The proposed method is very simple and has a low complexity analysis. Simulation results show that the proposed method performs better, has better power spectral density, and is less sensitive to the modulation type and number of subcarriers than $L_2$-by-3.