• Title/Summary/Keyword: r-lattice

Search Result 242, Processing Time 0.022 seconds

A Study on the Development of Assembling Soil Nailing Method and Its Applications (조립식 쏘일네일링 공법의 개발과 시험시공사례에 관한 연구)

  • Kwon, Young-Ho;Park, Shin-Young;Ryu, Jeong-Soo;Gang, In-Kyu
    • Proceedings of the Korean Geotechical Society Conference
    • /
    • 2005.03a
    • /
    • pp.113-120
    • /
    • 2005
  • Soil nailing system can be mentioned to a method of supporting as the shear strength of in-situ soils is increased by passive inclusions. In the general soil nailing system, facing walls are used in two kind of a lattice concrete block or a cast in placed concrete wall. A case of lattice concrete blocks is used in slow slopes greater than 1:0.7. Also, a case of a cast in placed concrete wall is used in steep slopes less than 1:0.5. The cast in placed concrete walls are constructed to 30cm thick together with a shotcrete facing. In this study, the assembling soil nailing method as a new soil nailing system is proposed. This method is constructed assembly using precast concrete panels. Therefore ability of the construction and quality of the facings can be modified than a usual soil nailing system. Also, this method can be obtained the effects that a global slope stability increase, as precast concrete panels is put on cutting face after excavating a slope.

  • PDF

(A Study on Optimization for Connected-(r,s)-out-of-(m,n):F System ) ((m,n)중 연속(r,s):F시스템의 최적화 연구)

  • Lee, Sang-Heon;Gang, Yeong-Tae
    • Proceedings of the Korean Operations and Management Science Society Conference
    • /
    • 2006.11a
    • /
    • pp.618-629
    • /
    • 2006
  • This Paper is about optimizing preventive maintenance period of connected (r,s) out of(m,n) : F lattice system that one of multi-component system, (m,n) matrix failure of whole system is occurrence when parts that belong in (r,s) matrix part procession of parts arranged with procession are breakdown all. The preventive maintenance about system is very important viewing from system reliability and operational expense viewpoint. Preventive maintenance that misses a time calls big loss by system failure and expense of frequent full equipment is paid excessively in preventive maintenance itself but expense is paid much in preventive maintenance itself and whole expense escalation can be achieved preferably. Through this research, reliability model is constructed that do expense by smallest under full equipment policy chosen through comparison of each full equipment policy and preventive maintenance expense full equipment cycle and r ,s value are made using simulated annealing algorithm and simulated annealing algorithm that converge fast in multi-component system certified most suitable to optimization decision

  • PDF

Epitaxial Growth of Rare-earth Ion Doped $CaF_2$ layers by MBE

  • Ko, J.N.;Chen, Y.;Fukuda, T.
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1998.09a
    • /
    • pp.3-7
    • /
    • 1998
  • The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.

  • PDF

Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device

  • Yoo, Sung-Won;Kim, Hyunsuk;Kang, Myounggon;Shin, Hyungcheol
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.16 no.2
    • /
    • pp.204-209
    • /
    • 2016
  • The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

High speed performance of Pb(Zr,Ti)O$_3$ capacitors through lattice engineering (격자 조정을 통한 PZT커패시터의 고속동작 성능)

  • Yang, B.L.
    • Journal of the Korean institute of surface engineering
    • /
    • v.35 no.3
    • /
    • pp.127-132
    • /
    • 2002
  • High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.

Fabrication of Three-Dimensional Magnetophotonic Crystals:Opal Thin Films Filled with Bi:YIG

  • Fujikawa, R.;Baryshev, A.V.;Uchida, H.;Lim, P.B.;Inoue, M.
    • Journal of Magnetics
    • /
    • v.11 no.3
    • /
    • pp.147-150
    • /
    • 2006
  • We have fabricated three-dimensional magnetophotonic crystals based on $\alpha$-$SiO_2$ opal films. Opal thin films grown on glass substrates were filled with bismuth substituted iron garnet (Bi:YIG). Scanning electron microscopy data, optical and magnetic properties of the synthesized samples confirm the presence of the Bi:YIG contentin the opal lattice. It is shown that the samples exhibit the (111) stop band, and transmissivity of the threedimensional magnetophotonic crystals is defined by both the film lattice and the Bi:YIG content.

Tracer Concentration Contours in Grain Lattice and Grain Boundary Diffusion

  • Kim, Yong-Soo;Donald R. Olander
    • Nuclear Engineering and Technology
    • /
    • v.29 no.1
    • /
    • pp.7-14
    • /
    • 1997
  • Grain boundary diffusion plays a significant role in fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission produce such as Xe and Kr generated during nuclear fission have to diffuse in the grain lattice and the boundary inside fuel pellets before they reach the open spaces in a fuel rod. These processes can be studied by 'tracer diffusion' techniques, by which grain boundary diffusivity can be estimated and directly used for low burn-up fission gas release analysis. However, only a few models accounting for the both processes are available and mostly handle them numerically due to mathematical complexity. Also the numerical solution has limitations in a practical use. In this paper, an approximate analytical solution in case of stationary grain boundary in a polycrystalline solid is developed for the tracer diffusion techniques. This closed-form solution is compared to available exact and numerical solutions and it turns out that it makes computation not only greatly easier but also more accurate than previous models. It can be applied to theoretical modelings for low bum-up fission gas release phenomena and experimental analyses as well, especially for PIE (post irradiation examination).

  • PDF

Synthesis and Comparative Analysis of Crystallite Size and Lattice Strain of Pb2Ba1.7Sr0.3Ca2Cu3O10+δ Superconductor

  • Hasan, Maher Abd Ali;Jasim, Kareem Ali;Miran, Hussein Ali Jan
    • Korean Journal of Materials Research
    • /
    • v.32 no.2
    • /
    • pp.66-71
    • /
    • 2022
  • In this article, Pb2Ba1.7Sr0.3Ca2Cu3O10+δ superconductor material was synthesized using conventional solid-state reaction method. X-ray diffraction (XRD) analysis demonstrated one dominant phase 2223 and some impurities in the product powder. The strongest peaks in the XRD pattern were successfully indexed assuming a pseudo-tetragonal cell with lattice constants of a = 3.732, b = 3.733 and c = 14.75 Å for a Pb-Based compound. The crystallite size and lattice strain between the layers of the studied compound were estimated using several methods, namely the Scherrer, Williamson-Hall (W.H), size-strain plot (SSP) and Halder Wagner (H.W) approach. The values of crystallite size, calculated by Scherrer, W.H, SSP and H.W methods, were 89.4540774, 86.658638, 87.7555823 and 85.470086 Å, respectively. Moreover, the lattice strain values obtained by W.H, SSP and H.W methods were 0.0063240, 0.006325 and 0.006, respectively. It was noted that all crystallite size results are consistent; however, the best method is the size-strain plot because it gave a value of R2 approaching one. Furthermore, degree of crystallites was calculated and found to be 59.003321%. Resistivity analysis suggests zero-resistance, which is typical of superconducting materials at critical temperature. Four-probe technique was utilized to measure the critical temperature at onset Tc(onset), zero resistivity Tc(off set), and transition (width ΔT), corresponding to temperatures of 128 K, 116 K, and 12 K, respectively.

Effect of AIN Buffers by R. F. Sputter on Defects of GaN Thin films (R. F. Sputter법으로 성장된 AIN 완충층이 GaN 박막결함에 미치는 영향)

  • 이민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.5
    • /
    • pp.497-501
    • /
    • 2004
  • The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

THE EFFECT OF PROCESSING PARAMETTERS ON THE MAGNETIC PROPERTIES OF Mn-Zn FERRITE FOR SMPS

  • Suk, J.H.;Jung, K.K.;Shon, H.J.;Hur, W.D.
    • Journal of the Korean Magnetics Society
    • /
    • v.5 no.5
    • /
    • pp.610-613
    • /
    • 1995
  • The effect of processing parameters such as milling, additives and sintering atmoshpere on the magnetic properties of Mn-Zn ferrite was investigated. The experiment was followed by general ceramic fabrication process and added additives were $CaCO_{3}$, $SiO_{2}$, $V_{2}O_{5}$, $ZrO_{2}$, and $Nb_{2}O_{5}$. The effects of additives could be divided into three categories which were formation ofliquid phase, substitution in lattice and inducing stress. Core loss smong the magnetic properties was dependent mainly on the additives and also correlated with processing parameters. As a result, an optimum condition of preparing process for a high quality Mn-Zn ferrite was suggested by controlling the correlation of each processing parameters.

  • PDF