• 세라미스트
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• 제22권4호
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• pp.429-451
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• 2019

Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.

• 한국산업융합학회 논문집
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• 제10권3호
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• pp.179-185
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• 2007

Quartz glass are used in semiconductor industries as the reaction furnace, wafer carrier and accessaries. During the process the quartz glass received compression by direct contact with other quartz glass ware and metal as the form of weight itself and vacuum pressure and fatigue by vibrations caused by process. Even as the other ceramic materials quartz glass have high compressive strength but often there happened crack and breakage of quartz glass resulted in a great damage in the process. In this paper investigation will be carried out on fracture behavior of quartz glass under local load to give guideline to prevent unintended fracture of quartz glass.

• 세라미스트
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• 제22권4호
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• pp.452-463
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• 2019

A quartz glass crucible is the essential material for manufacturing silicon ingots such as semiconductors and solar cells. Quartz glass crucibles for semiconductors and solar cells are made similar, but differ in surface purity, structure and durability. Recently, ultra high purity synthetic glass crucibles for semiconductors have become more important due to foreign problems. In Korea, it has succeeded in producing 28-inch quartz glass crucibles through the past 10 years. However, 32-inch synthetic quartz glass for the production of silicon ingots for semiconductors is not up to the level of advanced technology, and the technology gap is expected to be 2 to 3 years. In order to overcome these technological gaps and localize synthetic quartz glass ware, close cooperation between production companies and demand companies and localization of synthetic quartz glass powder must also be made. In addition, if government support can be added, faster results can be expected.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.513-519
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• 2006

본 연구에서는 유리(glass)와 석영(quartz)을 재질로 사용하여 MEMS(micro-electro mechanical systems) 공정을 통해 전기영동(electrophoresis)을 위한 microchip을 제작하였다. UV 광이 실리콘(silicon)을 투과하지 못하는 점에 착안하여, 다결정 실리콘(polycrystalline Si, poly-Si) 층을 채널 이외의 부분에 증착시킨 광 차단판(optical slit)에 의해 채널에만 집중된 UV 광의 신호/잡음비(signal-to-noise ratio: S/N ratio)를 크게 향상시켰다. Glass chip에서는 증착된 poly-Si 층이 식각 마스크(etch mask)의 역할을 하는 동시에 접합표면을 적절히 형성하여 양극 접합(anodic bonding)을 가능케 하 였다. Quartz 웨이퍼에 비해 불순물을 많이 포함하는 glass 웨이퍼에서는 표면이 거친 채널 내부를 형성하게 되어 시료용액의 미세한 흐름에 영향을 미치게 된다. 이에 따라, HF와 $NH_4F$ 용액에 의한 혼합 식각액(etchant)을 도입하여 표면 거칠기를 감소시켰다. 두 종류의 재질로 제작된 채널의 형태와 크기를 관찰하였고, microchip electrophoresis에 적용한 결과, quartz과 glass chip의 전기삼투 흐름속도(electroosmotic flow velocity)가 0.5와 0.36 mm/s로 측정되었다. Poly-Si 층에 의한 광 차단판의 존재에 의해, peak의 S/N ratio는 quartz chip이 약 2배 수준, glass chip이 약 3배 수준으로 향상되었고, UV 최대흡광 감도는 각각 약 1.6배 및 1.7배 정도 증가하였다.

• 한국기계가공학회지
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• 제8권4호
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• pp.14-19
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• 2009

Micro fluid channels are machined on quartz glass using powder blasting, and the machining characteristics of the channels are experimentally evaluated. The powder blasting process parameters such as injection pressure, abrasive particle size and density, stand-off distance, number of nozzle scanning, and shape/size of the required patterns affect machining results. In this study, the influence of the number of nozzle scanning, abrasive particle size, and blasting pressure on the formation of micro channels is investigated. Machined shapes and surface roughness are measured, and the results are discussed. Through the experiments and analysis, LOC are ettectinely machined on quartz glass using powder blasting.

• 한국산업융합학회 논문집
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• 제10권4호
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• pp.213-219
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• 2007

Glass-to-metal contact should be prevented in the design of any structural glass component. Because glass is extremely brittle and will fracture readily if even a small point load is applied. If the assembly includes a glass component supported by metallic structure, designers should provide a pliable interface of some kind between the two parts. But there happens high demand of glass-to metal contact in semiconductor industries due to adoption of dry cleaning process as one of the good solution to reduce running cost - carry out equipments cleaning with high corrosive and etching gas such as CF4 with keeping process temperature as the same as high service temperature. Therefore the quartz glass have to be received compression by direct contact with metal as the form of weight itself and vacuum pressure and fatigue by vibrations caused by process during the process. In this paper investigation will be carried out on fracture behavior of quartz glass contacted with metal directly under local load and fatigue given by process vibration with apparatus which can give $lox{\backslash}cal$ load and vibration through PZT ceramics to give guideline to prevent unintended fracture of quartz glass.

• 한국결정성장학회지
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• 제4권3호
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• pp.315-324
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• 1994

고순도 규사 원료를 열처리하는 경우, 불순물로 포함되어 있는 미량성분이 quartz의 전이과정에 미치는 영향 및 전이 경로에 대하여 조사하였다. 미량성분의 영향을 조사한 결과, 규사 중의 미량성분 함량이 많아지면 cristobalite 생성량은 많아지며, quartz의 소멸온도 및 cristobalite의 생성온도는 낮아졌다. quartz의 전이경로를 조사한 결과 quartz $\rightarrow$ 천이비정질상 $\rightarrow$ melt (T) 및 quartz $\rightarrow$ 천이비정질상 $\rightarrow$ cristobalite $\rightarrow$ melt (C)의 경로가 항상 공존하며, 미량성분이 적은 경우는 T 경로가 우세하지만, 미량성분이 많은 경우는 C 경로가 우세한 것으로 규명되었다. 또한 XRD를 이용한 결정질 함량의 분석 결과로 부터 계산한 밀도와 pycnometer로 측정한 밀도를 비교한 결과 서로 일치하였다. 규사를 용융하여 석영유리를 제조하는 경우,특정온도에서 규사의 팽창 정도를 유추할 수 있을 것이다.

• 환경위생공학
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• 제10권2호
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• pp.67-73
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• 1995

In order to study of characteristics of collected filter as analysis of carbon in airborne particulate matters by Elemental Analyzer, quartz fiber filter and glass fiber filter were used. The results are followed as; There was no difference of confidence in collection rate of airborne particulate matters between quartz fiber filter and glass fiber filter. Airborne particulate matters were collected on both filters evenly and the use of quartz fiber filter is better than glass fiber filter as analysis of carbon by thermal method.

• 한국세라믹학회지
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• 제54권4호
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• pp.298-302
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• 2017

To investigate the influence of alkaline impurity K content on bubbles of quartz glass, samples were prepared based on $SiO_2$ sand with differing amounts of potassium hydroxide solution added by electric fusion. Bubble properties such as number, diameter and bubble fraction were determined using a stereoscopic microscope. The results of the observations indicated that an alkaline impurity content of 100 ppm had a good effect on bubble decline in quartz glass. The effect on OH was investigated by FTIR(Fourier transform infrared spectroscopy).

• 한국군사과학기술학회지
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• 제10권3호
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• pp.114-119
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• 2007

Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.