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High Temperature Dielectric Properties of Silicon Nitride Materials  

Choi, Doo-Hyun (ADD)
Publication Information
Journal of the Korea Institute of Military Science and Technology / v.10, no.3, 2007 , pp. 114-119 More about this Journal
Abstract
Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.
Keywords
High Temperature Dielectric Properties; Quartz Glass; Silicon Nitride; Waveguide; Jarvis Method; Dielectric Constant; Loss Tangent;
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