• Journal of Adhesion and Interface
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• v.13 no.4
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• pp.188-192
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• 2012

Herein, CdS-coated PMMA nanoparticles were prepared by in-situ surfactant-free emulsion copolymerization and subsequent CdS coating process. As-prepared CdS/PMMA hybrid particles had 201.7 nm in diameter. The amount of CdS nanocrystals in the hybrid particles was 10.37 wt% determined by TGA and elemental analysis. The size of CdS crystals was 3.55 nm preferentially grown in (111) plane. UV-vis spectrum of PMMA/CdS nanoparticles showed the significant blue-shift in optical illumination. The reason was found because the synthesized CdS nanocrystals on PMMA particles had a different band gap energy of 2.70 eV which was significantly higher than that of known-value of bulk CdS (2.41 eV) due to a quantum confinement effect.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.41-46
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• 2022

The superconducting properties of high temperature superconducting (HTS) GdBCO coated conductor (CC) tape (Ag/GdBCO/Buffer-layers/Stainless Steel) were investigated, specifically a series of samples prepared by vacuum heat treatment (200℃ to 600℃), using a Quantum Design PPMS-14. The critical current density J_c value was obtained by applying the modified Bean model to the irreversible magnetization ∆M_irr(H) data which was estimated from the magnetization M(H) loop. The reduction rates of lnJ_c and T_c values according to the increase of the vacuum annealing temperature T_an were d(lnJ_c)/dT_an = - 0.016 A/(cm²∙℃) and dT_c/dT_an = - 0.24, respectively. We examined the effect of recovery temperature T_re (475℃ to 700℃) and recovery duration time t (0.5 h to 24 h) on the restoration of previously completely lost superconductivity in samples that subsequently received heat treatment in an O₂ gas flow space. All samples were fully restored to superconductivity by heat treatment in an O₂ gas flow space. The recovery temperatures T_re (475℃ to 700℃) and recovery duration times t (0.5 h to 24 h) were both independent of the superconductivity recovery characteristics.

• Analytical Science and Technology
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• v.20 no.5
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• pp.413-418
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• 2007

Poly(vinylpyrrolidone) stabilized cadmium sulfide (CdS) nanoparticles were loaded onto the surface of silica ($SiO_2$) nanoparticles by using ${\gamma}$-irradiation. TEM micrograph reveals the presence of ~20nm sized CdS nanoparticles on the surface of $SiO_2$ nanoparticles. XRD patterns confirm the crystalline. PL spectra of the simple PVP-stabilized CdS nanoparticle and $SiO_2$@CdS composite confirm the differences in the emission characteristics between them. Two prominent emission peaks were noted around 550 nm and 600 nm for PVP-stabilized CdS nanoparticles). The emission peaks noted for the PVP-stabilized CdS nanoparticles were found to be blue shifted for $SiO_2$@CdS composites. Besides, an additional emission peak around 450 nm was noticed for the $SiO_2$@CdS composite. The presence of CdS nanoparticles influence the emission characteristics and induce quantum confinement effect.

• Korean Journal of Medicinal Crop Science
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• v.15 no.3
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• pp.194-198
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• 2007

Yield and ginsenoside contents of ginseng (Panax ginseng C. A. Meyer) is affected by light intensity and quality, and the color and the thickness of PE shading net when PE net is utilized for shading material. This study was carried out to investigate the effect of light quality on root yield and ginsenoside contents off-year-old ginseng by using polyethylene shading net with each blue and yellow color, Spectral irradiance under blue and yellow shading net showed the peak at 498 nm and 606 nm, respectively, which made distinct difference in light quality. Heat injury ratio of blue shading net was increased distinctly more than that of yellow shading net in summer season because of higher transmitted quantum (23%)and air temperature (0.3 $^{\circ}$C) in blue shading net than those of yellow shading net. Chlorophyll content and leaf area under yellow shading net were higher than those of blue shading net, and its heat injury ratio was lower than those of blue. These effects may led to 48% higher increase of root yield under yellow shading net than that under blue shading net. The content of total ginsenoside in taproot was not significantly differed between blue and yellow shading net, while the content in lateral and fine root was significantly increased in blue shading net compared to yellow shading net. PDM ratio of blue shading net showed more significant increase in lateral root than that of yellow shading net. All of Rb$_1$/Rg$_1$ ratio in three parts of root under blue shading net was higher than that of yellow shading net, but there were no significant increase in the ratio of lateral root.

• Journal of Bio-Environment Control
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• v.19 no.4
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• pp.203-209
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• 2010

This study was performed to investigate photosynthetic responses of 4 foliage plants in relation to light intensity, carbon dioxide concentration, and media, and to select efficient plants for the indoor environment control based on the results. Four foliage plants used in this study included Syngonium podophyllum, Schefflera arboricola cv. Hong Kong, Dieffenbachia amoena, and Dracaena deremensis cv. Warneckii Compacta. The plants cultivated in two different growth media, peatmoss and hydroball, and subjected to various light intensities (0, 30, 50, 80, 100, 200, 400, and $600\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ PPFD) and $CO_2$ levels (0, 50, 100, 200, 400, 700, 1000, and $1500\;{\mu}mol{CO_2}{\cdot}mol^{-1}$). As a result of the photosynthetic rate of foliage plants according to change of light intensity and $CO_2$ levels, Schefflera arboricola and Dieffenbachia amoena showed high apparent quantum yield, which stands for the photosynthetic rate under low light intensity, and both plants also recorded higher photosynthetic rate under high $CO_2$ concentration compared to the other two indoor plants. Dracaena deremensis showed the lowest photosynthetic rate under the low light intensity or high $CO_2$ concentration. There were inconsistent results in photosynthetic rate of foliage plants grown in peatmoss or hydroball. Higher photosynthetic rate was observed in Schefflera arboricola with peatmoss rather than hydroball as light and $CO_2$ concentration increased. However, hydroball had a positive effect on Dieffenbachia amoena in terms of photosynthetic rate. In case of Syngonium podophyllum, peatmoss induced higher photosynthetic rate according to increased light intensity, but there was no effect of media on the rate under various $CO_2$ treatements. In contrast, media did not affect to photosynthetic efficiency of Dracaena deremensis subjected to various light intensities and the rate of Dracaena deremensis with peatmoss was a little high when $CO_2$ concentration increased. In conclusion, potential plants for the indoor air pulification and environmental control were Schefflera arboricola and Dieffenbachia amoena because they showed high photosynthetic rate under typical indoor conditions, low light intensity and high $CO_2$ concentration.

• Korean Journal of Environmental Biology
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• v.20 no.3
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• pp.197-204
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• 2002

Gourd seeds were irradiated with the doses of 0-20 Gy to investigate the effect of the low dose $\gamma$-radiation on the early growth and physiological activity. The stimulating effects of the low dose y- radiation on the early growth were not noticeably high, but were increased generally at 4-16 Gy irradiation group. The catalase and peroxidase activity of cotyledon from seeds irradiated with $\gamma$- radiation were increased at 8 Gy irradiation group. The photochemical activity of leaf was noticeably high at 4 Gy irradiation group. The photochemical yield of PSII, estimated as Fv/Fm, decreased with increasing illumination time by 50% after 4 hrs in the control and 8 Gy irradiation group, while Fo slightly increased. However, Fv/Em in the 4 Gy irradiation group decreased by 40% of inhibition, indicating that photoinhibition decreased by the low dose $\gamma$- radiation. Changes in the effective quantum yield of PSII, $\varphi_{PSII}$ and 1/Fo- l/Fm, a measure of the rate constant of excitation trapping by the PSII reaction center, showed similar pattern to Fv/Em. NPQ decreased by 70% after photoinhibitory treatment with showing similar pattern between the control and the irradiation group. These results showed the positive effect of low dose $\gamma$- radiation on the seedling growth and the reduction of photoinhibition in the 4 Gy irradiation group.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.35 no.1
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• pp.38-50
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• 2013

Purpose: The aim of this study is to evaluate the effect and potential of electron beam (E-beam) irradiation treatment to the synthetic bony mixtures composed of hydroxyapatite (HA; Bongros$^{(R)}$, Bio@ Co., Korea) and tricalcium phosphate (${\beta}$-TCP, Sigma-Aldrich Co., USA), mixed at various ratios and of type I collagen (Rat tail, BD Biosciences Co., Sweden) as an organic matrix. Methods: We used 1.0~2.0 MeV linear accelerator and 2.0 MeV superconductive linear accelerator (power 100 KW, pressure 115 kPa, temperature $-30{\sim}120^{\circ}C$, sensor sensitivity 0.1~1.2 mV/kPa, generating power sensitivity 44.75 mV/kPa, supply voltage $5{\pm}0.25$ V) with different irradiation dose, such as 1, 30 and 60 kGy. Structural changes in this synthetic bone material were studied in vitro, by scanning electron microscopy (SEM), elementary analysis and field emission scanning electron microscope (FE-SEM), attenuated total reflection (ATR), and electron spectroscopy for chemical analysis (ESCA). Results: The large particular size of HA was changed after E-beam irradiation, to which small particle of TCP was engaged with organic collagen components in SEM findings. Conclusion: The important new in vitro data to be applicable as the substitutes of artificial bone materials in dental and medical fields will be able to be summarized.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.479-485
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• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.