• Progress in Superconductivity
• /
• v.2 no.1
• /
• pp.20-26
• /
• 2000

A 40-channel superconducting quantum interference device (SQUID) system was constructed for measuring neuromagnetic fields. Main features of the system are the use of double relaxation oscillation SQUIDs (DROSs), and planar gradiometers measuring magnetic field components tangential to the head surface. The DROSs with high flux-to-voltage transfers enabled direct readout of the SQUID output by room-temperature dc preamplifiers and simple flux-locked loop circuits could be used for SQUID operation. The pickup coil is an integrated first-order planar gradiometer with a baseline of 40 mm. Average noise level of the 40 channels is around 1.2 $fT/cm/{\surd}Hz$ at 100 Hz, corresponding to a field noise of 5 $fT/{\surd}Hz$, operated inside a magnetically shielded room. The SQUID insert was designed to have low thermal load, minimizing the loss of liquid helium. The constructed system was applied to measure auditory-evoked neuromagnetic fields.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.229-229
• /
• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.195-199
• /
• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.2
• /
• pp.23-28
• /
• 2008

To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about $400{\AA}$. We investigated the dependence of the PFO thickness ranging from $200{\AA}$ to $300{\AA}$ on the electrical, optical properties of PLEDs. Among prepared PLED devices with different PFO thicknesses, the highest value of the luminance was obtained for the PLED device with $250{\AA}$ in thickness. As a result, the current density and luminance ware found to be about $400mA/cm^2$ and $1500cd/m^2$ at 13V, respectively. In addition, the luminance and current efficiency of PLED device with double emitting layer (PFO/PFO:MEH-PPV) were improved about 3 times compared with the one with single emitting layer (PFO:MEH-PPV).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.3
• /
• pp.479-485
• /
• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.153-153
• /
• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Journal of the Korean Vacuum Society
• /
• v.20 no.4
• /
• pp.288-293
• /
• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• Journal of Photoscience
• /
• v.10 no.1
• /
• pp.9-20
• /
• 2003

Recent studies on the photoreactivity of l,4-unsaturated systems have changed some ideas that were firmly established in this area of research for many years. Thus, we have described the first examples of 2-aza-di-$\pi$-methane (2-ADPM) rearrangements promoted by triplet-sensitization and by single electron transfer (SET) using electron-acceptor sensitizers. These reactions afford N-vinylaziridine and cyclopropylimine photoproducts in the first examples of di-$\pi$-methane processes that yield three-membered ring heterocycles. l-Aza-1,4-dienes also undergo SET-promoted l-aza-di-$\pi$-methane (l-ADPM) rearrangements via radical-cation intermediates using electron acceptor sensitizers. In some cases, alternative cyclizations yielding different carbocycles and heterocycles have been observed. The l-ADPM and di-$\pi$-methane (DPM) reactions also occur via radical-anion intermediates on irradiation using electron donor sensitizers. On the other hand, the photoreactivity reported for $\beta$,${\gamma}$-unsaturated aldehydes for many years was decarbonylation to the corresponding alkenes. However, our studies demonstrate that these compounds undergo the oxa-di-$\pi$-methane (ODPM) rearrangement with high chemical and quantum efficiency. A comparison of the photochemical reactivity of $\beta$,${\gamma}$-unsaturated aldehydes and corresponding methyl ketones has shown that the ketones do not undergo the ODPM rearrangement while the corresponding aldehydes are reactive by this pathway. Monosubstituted $\beta$,${\gamma}$-unsaturated aldehydes at C-2 undergo the ODPM rearrangement yielding the corresponding cyclopropane carbaldehydes diastereoselectively. Finally, we have described the first examples of reactions, similar to the well know Norrish Type I process, which take place in the triplet excited state of $\beta$,${\gamma}$-unsaturated carbonyl compounds by excitation of the C-C double bond instead of the carbonyl group.

• Progress in Superconductivity
• /
• v.10 no.2
• /
• pp.139-143
• /
• 2009

We have fabricated a low-noise 61-channel axial-type first-order gradiometer system for measuring fetal magnetocardiography(MCG) signals. Superconducting quantum interference device(SQUID) sensor was based on double relaxation oscillation SQUID(DROS) for detecting biomagnetic signal, such as MCG, magnetoencphalogram(MEG) and fetal-MCG. The SQUID sensor detected axial component of fetal MCG signal. The pickup coil of SQUID sensor was wound with 120 ${\mu}m$ NbTi wire on bobbin(20 mm diameter) and was a first-order gradiometer to reject the environment noise. The sensors have low white noise of 3 $fT/Hz^{1/2}$ at 100 Hz on average. The fetal MCG was measured from $24{\sim}36$ weeks fetus in a magnetically shielded room(MSR) with shielding factor of 35 dB at 0.1 Hz and 80 dB at 100 Hz(comparatively mild shielding). The MCG signal contained maternal and fetal MCG. Fetal MCG could be distinguished relatively easily from maternal MCG by using independent component analysis(ICA) filter. In addition, we could observe T peak as well as QRS wave, respectively. It will be useful in detecting fetal cardiac diseases.

• Analytical Science and Technology
• /
• v.8 no.2
• /
• pp.125-129
• /
• 1995

The energy transfer is observed in double-activator-doped LaOCl:Pr, Tb and LaOCl:Pr, Eu system. From laser excitation and fluorescence spectra, a peculiar process for energy transfer between the activators is found. The energy absorbed by $Tb^{3+}$ is directly transferred to $Pr^{3+}$ ion. A cascade relaxation of an excited $Pr^{3+}$ level to lower level, $^1D_2$ is induced by $Eu^{3+}$, $Tb^{3+}$, which has $^7F_J$ ground levels like $Eu^{3+}$ ion, does not affect the cascade relaxation. The result represents that the quantum state of ion is not absolute condition for the energy transfer and that the energy transfer is competitive between levels of activator when the activator ions are closely located.