• Title/Summary/Keyword: quantum dots

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Study on UV Opto-Electric Properties of ZnS:Mn/ZnS Core-Shell QD

  • Lee, Yun-Ji;Cha, Ji-Min;Yoon, Chang-Bun;Lee, Seong-Eui
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.55-60
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    • 2018
  • In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.

Micropattern Arrays of Polymers/Quantum Dots Formed by Electrohydrodynamic Jet (e-jet) Printing (이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정)

  • Kim, Simon;Lee, Su Eon;Kim, Bong Hoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.18-23
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    • 2022
  • Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.

Electrical and Magnetic Properties of Tunneling Device with FePt Magnetic Quantum Dots (FePt 자기 양자점 터널링 소자의 전기적 특성과 자기적 특성 연구)

  • Pak, Sang-Woo;Suh, Joo-Young;Lee, Dong-Uk;Kim, Eun-Kyu
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.57-62
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    • 2011
  • We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8~15 nm were embedded in a $SiO_2$ layer through thermal annealing process at temperature of $800^{\circ}C$ in $N_2$ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (I-V) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear I-V curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.

Fabrication of Visible-Light Sensitized ZnTe/ZnSe (Core/Shell) Type-II Quantum Dots

  • Kim, Misung;Bang, Jiwon
    • Journal of the Korean Ceramic Society
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    • v.55 no.5
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    • pp.510-514
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    • 2018
  • Colloidal semiconductor quantum dots (QDs), because of the novel optical and electrical properties that stem from their three-dimensional confinement, have attracted great interest for their potential applications in such fields as bio-imaging, display, and opto-electronics. However, many semiconductors that can be exploited for QD applications contain toxic elements. Herein, we synthesized non-toxic ZnTe/ZnSe (core/shell) type-II QDs by pyrolysis method. Because of the unique type-II character of these QDs, their emission can range over an extended wavelength regime, showing photoluminescence (PL) from 450 nm to 580 nm. By optimizing the ZnSe shell growth condition, resulting ZnTe/ZnSe type-II QDs shows PL quantum yield up to ~ 25% with 35 nm PL bandwidth. Using a simple two step cation exchange reaction, we also fabricated ZnTe/ZnSe type-II QDs with absorption extended over the whole visible region. The visible-light sensitized heavy metal free ZnTe/ZnSe type-II QDs can be relevant for opto-electronic applications such as displays, light emitting diodes, and bio-imaging probes.

Semi-analytical Numerical Analysis of the Core-size and Electric-field Intensity Dependency of the Light Emission Wavelength of CdSe/ZnS Quantum Dots

  • Lee, Honyeon
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.3
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    • pp.11-17
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    • 2021
  • I performed a semi-analytical numerical analysis of the effects of core size and electric field intensity on the light emission wavelength of CdSe/ZnS quantum dots (QDs). The analysis used a quantum mechanical approach; I solved the Schrödinger equation describing the electron-hole pairs of QDs. The numerical solutions are described using a basis set composed of the eigenstates of the Schrödinger equation; they are thus equivalent to analytical solutions. This semi-analytical numerical method made it simple and reliable to evaluate the dependency of QD characteristics on the QD core size and electric field intensity. As the QD core diameter changed from 9.9 to 2.5 nm, the light emission wavelength of CdSe core-only QDs varied from 262.9 to 643.8 nm, and that of CdSe/ZnS core/shell QDs from 279.9 to 697.2 nm. On application of an electric field of 8 × 105 V/cm, the emission wavelengths of green-emitting CdSe and CdSe/ZnS QDs increased by 7.7 and 3.8 nm, respectively. This semi-analytical numerical analysis will aid the choice of QD size and material, and promote the development of improved QD light-emitting devices.

One-pot synthesis of highly fluorescent amino-functionalized graphene quantum dots for effective detection of copper ions

  • Tam, Tran Van;Choi, Won Mook
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1255-1260
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    • 2018
  • In this work, a green and simple one-pot route was developed for the synthesis of highly fluorescent aminofunctionalized graphene quantum dots (a-GQDs) via hydrothermal process without any further modification or surface passivation. We synthesized the a-GQDs using glucose as the carbon source and ammonium as a functionalizing agent without the use of a strong acid, oxidant, or other toxic chemical reagent. The as-obtained aGQDs have a uniform size of 3-4 nm, high contents of amino groups, and show a bright green emission with high quantum yield of 32.8%. Furthermore, the a-GQDs show effective fluorescence quenching for $Cu^{2+}$ ions which can serve as effective fluorescent probe for the detection of $Cu^{2+}$. The fluorescent probe using the obtained aGQDs exhibits high sensitivity and selectivity toward $Cu^{2+}$ with the limit of detection as low as 5.6 nM. The mechanism of the $Cu^{2+}$ induced fluorescence quenching of a-GQDs can be attributed to the electron transfer by the formation of metal complex between $Cu^{2+}$ and the amino groups on the surface of a-GQDs. These results suggest great potential for the simple and green synthesis of functionalized GQDs and a practical sensing platform for $Cu^{2+}$ detection in environmental and biological applications.

Assemled Nanocrystal Quantum Dots for Photovoltaics

  • Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.106-106
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    • 2012
  • Strategies to facilitate carrier transfer/transport while preserving confined characteristics of isolated nanocrystal quantum dots (NQDs) will be discussed. Specifically, synthesis and characterizations of 1) the fabrication of neat NQD solids (assembled NQD films) with modified surfaces by attaching ligands or by applying physical processes such as heat annealing [J. Phys. Chem. C (2011), 115(3), 607] and 2) coupling NQDs to one-dimensional nanostructures such as single-walled carbon nanotubes (SWNTs) [ACS Nano, (2010) 4(1), 324] will be presented. Further, recent achievement ours of fabricating NQDs assemblies into photovoltaic devices for elucidating transfer mechanism witll be discussed.

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