• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• Ocean Systems Engineering
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• 제4권4호
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• pp.263-278
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• 2014

The spudcan requires the suitable design considering the soil, platform, and environmental conditions. Its shape needs to be designed to secure sufficient reaction of soil so that it can prevent overturning accidents. Its shape also has to minimize the installation and extraction time. Even in the same soil condition, the reaction of soil may be different depending on the shape of spud can, mainly the slope of top and bottom plates. Therefore, in this study, the relation between the slope of plates and the reaction of soil with and without water jetting is analyzed to better understand their interactions and correlations. For the investigation, a wind turbine installation jack-up rig (WTIJ) is selected as the target platform and the Gulf of Mexico is considered as the target site. A multi layered (sand overlying two clays) soil profile is applied as the assumed soil condition and the soil-structure interaction (SSI) analysis is performed by using ANSYS to analyze the effect of the slope change of the bottom plate and water jetting on the reaction of soil. This kind of investigation and simulation is needed to develop optimal and smart spudcan with water-jetting control in the future.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.485-488
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• 2004

As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

• 산업기술연구
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• 제21권B호
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• pp.287-294
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• 2001

This study is aimed to evaluate the springback characteristics of automotive steel sheets through the S-rail forming test and to find the process condition under which springback can be reduced. Die set for the S-rail test has been made according to the dimension of the NUMISHEET '96 benchmark model. Experiment and finite element analysis have been performed on two kinds of automotive steel sheets: mild steel, SPCEN and high strength steel, SPRC. The test results show that the amount of springback is larger on the high strength steel SPRC than on the mild steel SPCEN, and decreases with increasing blank holding force as the case of material flow. And the reduction of friction has the effect of lowering the blank holding force in view of punch force and material flow. It is shown that the strain distribution over the whole specimen and along the specified sections calculated from the finite element analysis coincides with the measured data except local differences.

• 소성∙가공
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• 제28권6호
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• pp.335-346
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• 2019

Thick plate forming is presented to manufacture a large and curved member of steam turbine diaphragm. Due to three-dimensional asymmetry of target geometry, it is hard to consistently keep the blank position in die cavity between forming punch and die. In order to relieve the position instability of the blank during the thick plate forming, a blank support structure is proposed to be composed of guide pins and linear bearing, and blank guide arm enlarged from both longitudinal ends of the thick blank. In this study, parametric investigations with regard to the geometric position and width of the blank guide arm are carried out. As main geometric parameters, 2 positions such as maximum curvature region and minimum one on a curved cross-section profile of the target shape are selected, and 14 widths of the blank guide arm are considered. Using 28 variable combinations, three-dimensional numerical simulations are performed to predict the appropriate range of the process parameters. The compatibility and validity of the blank support structure with the blank guide arm for the thick plate forming is verified through the thick plate forming experiments.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2001년도 추계학술대회 논문집
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• pp.204-207
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• 2001

The bending process for the circular curved tube and rectangular curved tube with fins can be developed by the hot metal extrusion machine with the multiple punches moving in the different velocity. The bending phenomenon can be controlled by the two variables. The one of them is the difference of velocity at the die exit section by the different velocity of billets through the multi-hole container. The other is the one by the different hole diameter. The results of the experiment show that the circular curved tube with fins and rectangular curved tube with pins can be formed by the extrusion process and that the curveture of the product can be controlled by the velocity of punch and diameter of container hole and that the defects such as the distortion of section and the thickness change of the wall of tube the folding and wrinkling of thin tube and fins did not happen after the bending processing by the extrusion bending machine.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2001년도 추계학술대회 논문집
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• pp.212-215
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• 2001

The bending process for the rectangular curved tube can be developed by the hot metal extrusion machine with the multiple punches moving in the different velocity. The bending phenomenon can be controlled by the two variables, the one of them is the difference of velocity at the die exit section by the different velocity of billets through the multi-hole container. The other is the difference by the different hole diameter. The results of the experiment show that the rectangular curved tube can be formed by the extrusion process and that the curvature of the curved product can be controlled by the velocity of punch and the diameter of container hole and that the defects such as the distortion of section and the thickness change of the wall of tube and the folding and wrinkling of thin tube did not happen after the bending processing by the extrusion bending machine.

• 소성∙가공
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• 제19권1호
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• pp.17-24
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• 2010

A stretch forming method has been widely used in sheet metal forming process. Especially, this process has been adopted in aircraft and high-speed train industries for skin structure forming having a variety of curvature. Until now, solid dies, which are designed with respect to the specific shapes and manufactured as a single piece, have been usually applied to stretch forming process. Therefore, a great number of solid dies has to be developed according to the shapes of the curved skin structure. Accordingly, a flexible die is proposed in this study. It replaces the conventional solid dies with a set of height adjustable punch array. A usefulness of the flexible die is verified through a formability comparison with the solid die using finite element method considering an elastic recovery and the stretch forming apparatus with the flexible die is developed.

• 대한전자공학회논문지
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• 제20권2호
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• pp.1-6
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• 1983

MOS 트랜지스터의 채널이 짧아짐에 따라 threshold 전압과 punchthrough 전압이 감소하는 현상을 실리콘 게이트 NMOS 기술로 제작한 소자로써 실험적으로 관찰하였다. 또한 게이트 산화막의 두께를 50nm와 70nm로 감소시키고 보론(boron)을 임플랜트한 소자를 제작하여 게이트 산화막의 두께와 서브스트레이트의 불순물의 농도가 threshold 전압과 Punchthrough 전압의 감소에 미치는 영향을 측정하였다. 또 채널의 길이가 3㎛인 소자에 대하여 hot-electron의 방출을 플로우팅 게이트 패준 방법에 의하여 측정하였으며 그 결과 채널의 길이가 3㎛까지는 hot-electron의 방출은 문제가 되진 않음을 관찰하였다.