• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1266-1274
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• 2006

A non-overlap boosted-clock charge pump(NBCCP) with internal pumping capacitor, an advantageous circuit from a minimizing point of TFT-LCD driver IC module, is proposed in this paper. By using the non-overlap boosted-clock swinging in 2VDC voltage, the number of pumping stages is reduced to half and a back current of pumping charge from charge pumping node to input stage is also prevented compared with conventional cross-coupled charge pump with internal pumping capacitor. As a result, pumping current of the proposed NBCCP circuit is increased more than conventional cross-coupled charge pump, and a layout area is decreased. A proposed DC-DC converter for TFT-LCD driver IC is designed with $0.18{\mu}m$ triple-well CMOS process and a test chip is in the marking.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1899-1909
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• 2007

A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.9-16
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• 2017

This study describes the development of a 1-inch cryogenic glove valve for an LNG pumping system and localization development achieved through the performance test. The cryogenic valve used in the LNG pumping system plays an important role in maintaining a flow rate by LNG transportation. This trial manufactured goods, which was achieved through reverse engineering and developing the assembly process. The result of the leak test satisfied the internal pressure condition using the 78-bar normal temperature test and maintained the anti-leakage condition. Also, the result of the cryogenic leak test (BS 6364: low temperature test procedure) maintained anti-leakage at -196 and 52 bar, which satisfied the test standards.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.22-28
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• 2013

It is important to begin left ventricular assist device (LVAD) treatment at appropriate time for heart failure patients who expect cardiac recovery after the therapy. In order to predict the optimal timing of LVAD implantation, we predicted pumping efficacy of LVAD according to the severity of heart failure theoretically. We used LVAD-implanted cardiovascular system model which consist of 8 Windkessel compartments for the simulation study. The time-varying compliance theory was used to simulate ventricular pumping function in the model. The ventricular systolic dysfunction was implemented by increasing the end-systolic ventricular compliance. Using the mathematical model, we predicted cardiac responses such as left ventricular peak pressure, cardiac output, ejection fraction, and stroke work according to the severity of ventricular systolic dysfunction under the treatments of continuous and pulsatile LVAD. Left ventricular peak pressure, which indicates the ventricular loading condition, decreased maximally at the 1st level heart-failure under pulsatile LVAD therapy and 2nd level heart-failure under continuous LVAD therapy. We conclude that optimal timing for pulsatile LVAD treatment is 1st level heart-failure and for continuous LVAD treatment is 2nd level heart-failure when considering LVAD treatment as "bridge to recovery".

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.59-59
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• 2012

Vacuum pumping remains central to the performance and economy of many manufacturing processes, scientific instruments and scientific research. More vacuum is being used in many of the latest or leading edge manufacturing processes: Current examples include 3D semiconductor devices, EUV lithography, 450 mm silicon wafers, AMOLED displays, LEDs, Lithium-ion batteries and steel degassing. In other applications, vacuum pumping technology developments have led to much lower product costs which for example have enabled mass spectrometers to become a ubiquitous tool is life science research. Vacuum pumps have continuously evolved during the past 100 years of vacuum-based industrial processing but remain a key component which is often on the critical path of process and product improvements. This is especially so in the growing number of applications where the pumps are highly stressed. This presentation outlines significant developments in vacuum that have brought about this progress. The likely course of continued improvements is discussed in terms of increased performance and reliability, robust by-product handling, better cost efficiency and reduced environmental impact especially power consumption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.449-457
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• 2011

Effect of pump combinations on the vacuum characteristics of vacuum system was simulated for optimum design of system. In this investigation, the feasibility of modelling mechanism for VacSimMulti simulator was proposed. Simulation results of various pumping combinations showed the possibilities and reliabilities of simulation for the performance of vacuum system in specific semiconductor processing. Simulation of roughing pump presented the expected pumping behaviors based on commercial specifications of employed pumps. Application of booster pump exhibited the high pumping efficiency for middle vacuum range. Combinations of optimum backing pump for diffusion and turbo vacuum system were obtained. And, the predictable characteristics of process application of both simulated systems were also acquired.

• International Journal of Aeronautical and Space Sciences
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• v.12 no.1
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• pp.69-77
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• 2011

A peristaltic micropump with lightweight piezo-composite actuator (LIPCA) membrane valves is presented. The micropump contained three cylinder chambers that were connected by microchannels and two active membrane valves. A circular miniature LIPCA was developed and manufactured to be used as actuating diaphragms. The LIPCA diaphragm acted as an active membrane valve that alternate between open and closed positions at the inlet and outlet in order to produce high pumping pressure. In this LIPCA, a lead zirconium titanate ceramic with a thickness of 0.1 mm was used as an active layer. The results confirmed that the actuator produced a large out-of-plane deflection. During the design process, a coupled field analysis was conducted in order to predict the actuating behavior of the LIPCA diaphragm; the behavior of the actuator was investigated from both a theoretical and experimental perspective. The active membrane valve concept was introduced as a means for increasing pumping pressure, and microelectromechanical system techniques were used to fabricate the peristaltic micropump. The pumping performance was analyzed experimentally in terms of the flow rate, pumping pressure and power consumption.

• Journal of Korea Water Resources Association
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• v.30 no.5
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• pp.495-501
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• 1997

Pumping power being given, traditional method requires an iteration process for the solution of discharge and pipe diameter. Yoo and Kang (1996) have developed explicit equations for the estimation of discharge and pipe diameter for the cases of uniformly rough pipe on a sloping bed with a pumping power. The use of poser law for the estimation of friction factor enabled to develop the explicit form of equations. Yoo (1995a) has suggested the mean friction factor method for the estimation of friction factor of commercial pipe or composite surface pipe. With the same approach, the present work has developed the explicit equations of discharge or pipe diameter for the general case of commercial pipe on a sloping bed with a pumping power by adopting the mean friction factor method.

• Journal of the korean Society of Automotive Engineers
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• v.7 no.1
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• pp.24-34
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• 1985

The study of unsteady gas exchange processes in the inlet and exhaust systems of the single-cylinder 4-stroke cycle spark ignition engine is presented in this paper. The generalized method of characteristics including friction, heat transfer, change of flow area and entropy gradients was used for solving the equations defining the gas exchange process. The path line calculation was also conducted to allow for calculation of the gas composition and entropy change along the path lines, and of the variable specific heat due to the change of temperature and composition. As the result of the simulation, the properties at each point in the inlet and exhaust pipe, pressure and temperature in the cylinder, and charging efficiency were obtained. Pumping loss and residual gas fraction were also computed. The effect of engine speed, exhaust and inlet pipe length on the pumping loss and charging efficiency were studied showing that the results were in agreement with what has been known from experiments.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.776-780
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• 2007

In this paper, the charge pump circuit of a VPP generator for a low voltage DRAM is newly proposed. The proposed charge pump is a 2-stage cross coupled charge pump circuit. The charge transfer efficiency is improved, and Distributed Clock Inverter is located in each charge pump stage to reduce clock period so that the pumping current is increased. In addition, the precharge circuit is located at Gate node of charge transfer transistor to solve the problem which is that the Gate node is maintained high voltage because the boosted charge can't discharge, so device reliability is decreased. The simulation result is that pumping current, pumping efficiency and power efficiency is improved. The layout of the proposed VPP generator is designed using $0.18{\mu}m$ Triple-Well process.