• Nuclear Engineering and Technology
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• 제53권10호
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• pp.3421-3430
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• 2021

Spherical NaI(Tl) detectors are used in gamma-ray spectrometry, where the gamma emissions come from the nuclei with energies in the range from a few keV up to 10 MeV. A spherical detector is aimed to give a good response to photons, which depends on their direction of travel concerning the detector center. Some distortions in the response of a gamma-ray detector with a different geometry can occur because of the non-uniform position of the source from the detector surface. The present work describes the calibration of a NaI(Tl) spherical detector using both an experimental technique and a numerical simulation method (NSM). The NSM is based on an efficiency transfer method (ETM, calculating the effective solid angle, the total efficiency, and the full-energy peak efficiency). Besides, there is a high probability for a source-to-detector distance less than 15 cm to have pulse coincidence summing (CS), which may occur when two successive photons of different energies from the same source are detected within a very short response time. Therefore, γ-γ ray CS factors are calculated numerically for a ¹⁵²Eu radioactive cylindrical source. The CS factors obtained are applied to correct the measured efficiency values for the radioactive volumetric source at different energies. The results show a good agreement between the NSM and the experimental values (after correction with the CS factors).

• 한국진공학회지
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• 제6권3호
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• pp.194-199
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• 1997

Al/a-Si:H/Mo 구조의 MIM(Metal-Insulator-Metal) antifuse를 제작하여 antifuse의 I-V 특서을 조사하고, 온저항의 분포를 구하였다. 제작된 antifuse의 누설전류는 1pA/$\mu\textrm{m}^2$이하였고, 프로그래밍 전압은 10~11V 내에 분포하였다. 프로그램 후 온저항은 대부분 10~20 Ω이었고, 20%정도는 100$\Omega$이상의 분포도를 보였다. 이러한 온저항 분포의 편차와 저항값을 줄이기 위해 이미 프로그램된 antifuse에 다시 전류를 주입하는 재 프로그래밍 방법을 시도 하였다. 이 방법을 통하여 100$\Omega$이상의 온저항을 가지는 antifulse를 다시 50$\Omega$이하로 낮출 수 있었다. 재 프로그래밍 방법을 사용한 antifuse는 한번만 프로그래밍 했을 때 보다 더욱 더 균일하고 낮은 온저항 분포를 가졌다.

• Nuclear Engineering and Technology
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• 제4권2호
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• pp.116-131
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• 1972

Li$^{7}$ (p, n) Be$^{7}$ 원자핵반응에서 Li target의 두께와 입사양자의 에너지를 적절히 선정하므로써 1-n sec 파동 Van de Graaff 가속도로부터 keV 영역에서의 연속중성자spectrum을 발생시키고 92% 농축된 5mm 두께의 $B^{10}$ 판과 4개의 4＂$\times$3＂ NaI (T1) 발광체로 이루어진 속중성자검출기를 이용 속중성자 비행시간법에 의한 중성자spectrometer 를 제작하였다. 장치의 에너지 분해능은 50 keV에서 0.3%보다 양호하며 신호대잡음비도 개량되었다. 이를 이용하여 몇가지 분석된 단일동위원소의 전단면적을 측정하고 R-matrix 전자계산 code로 분석하였다. 각 공명에 따르는 스핀식와 공명인수들을 찾아내었다.

• Journal of information and communication convergence engineering
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• 제5권2호
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• 전기학회논문지
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• 제64권12호
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국전자파학회논문지
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• 제30권4호
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• pp.307-313
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• 2019

Ka-대역 밀리미터파 복합모드 탐색기에 적용할 수 있는 진행파관 증폭기(traveling wave tube amplifier: TWTA)는 고전압생성부(high voltage power supply: HVPS), 변조부(grid modulator), 제어부(command & control), 고조파부(RF assembly)로 구성되는 고출력 펄스형 송신기이다. 펄스 반복 주파수(pulse repetition frequency: PRF)와 전원공급기 스위칭 주파수가 동기/가변되어 -17.9 kV 고전압을 생성하는 고전압 전원 공급기와 RF 펄스 변조를 위한 고속 그리드 스위칭 변조기를 설계하였다. 체적이 3.18 L로 소형화로 제작된 TWTA는 그리드 on/off 신호의 상승/하강시간이 최대 18.5 ns 이하 고속펄스 스위칭 특성을 가지고, 첨두전력은 564.9 W 이상으로 고출력 성능을 보였다. 또한 PRF와 PRF/2 범위 내에서 -68.4 dBc 이하의 우수한 불요파 성능을 확인하였다.

• 전력전자학회논문지
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• 제24권6호
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Nuclear Engineering and Technology
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• 제53권2호
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• pp.618-625
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• 2021

In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅_p-well) of 5.0 × 10¹², 4.0 × 10¹², and 3.0 × 10¹² atoms/cm² under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅_p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at V_ex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

• 한국결정성장학회지
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• 제24권2호
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• pp.59-64
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• 2014

전해질로 $Na_2SiO_3$을 사용하여 A1050 알루미늄 판재를 pulse 폭 $ 2000{\mu}sec$, impulse 420 V, 400 ${\mu}$sec의 unipolar pulse로 플라즈마 전해 산화 코팅(plasma electrolytic oxidation coating)을 하여 산화 피막을 2, 5, 15, 30분에 따라 형성시킨 다음 산화피막을 분석하였다. 표면에 형성된 산화물의 결정상은 ${\alpha}-alumina$와 ${\gamma}-Alumina$로서 시간에 따른 변화는 없었다. 반응 초반에는 ${\gamma}-Alumina$가 많이 생성되었지만 시간이 갈수록 ${\gamma}-Alumina$의 양에는 변화 없이 ${\alpha}-alumina$가 많이 생겨남을 알 수 있었다. 이런 결과는 micro plasma에 의해서 ${\gamma}-Alumina$가 우선 생성되고, 이후 계속되는 micro plasma의 열에 의해서 ${\alpha}-alumina$로의 전이가 일어나기 때문으로 판단된다.