• 제목/요약/키워드: proximity correction

검색결과 41건 처리시간 0.021초

Optical Proximity Corrections for Digital Micromirror Device-based Maskless Lithography

  • Hur, Jungyu;Seo, Manseung
    • Journal of the Optical Society of Korea
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    • 제16권3호
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    • pp.221-227
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    • 2012
  • We propose optical proximity corrections (OPCs) for digital micromirror device (DMD)-based maskless lithography. A pattern writing scheme is analyzed and a theoretical model for obtaining the dose distribution profile and resulting structure is derived. By using simulation based on this model we were able to reduce the edge placement error (EPE) between the design width and the critical dimension (CD) of a fabricated photoresist, which enables improvement of the CD. Moreover, by experiments carried out with the parameter derived from the writing scheme, we minimized the corner-rounding effect by controlling light transmission to the corners of a feature by modulating a DMD.

Computational assessment of blockage and wind simulator proximity effects for a new full-scale testing facility

  • Bitsuamlak, Girma T.;Dagnew, Agerneh;Chowdhury, Arindam Gan
    • Wind and Structures
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    • 제13권1호
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    • pp.21-36
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    • 2010
  • A new full scale testing apparatus generically named the Wall of Wind (WoW) has been built by the researchers at the International Hurricane Research Center (IHRC) at Florida International University (FIU). WoW is capable of testing single story building models subjected up to category 3 hurricane wind speeds. Depending on the relative model and WoW wind field sizes, testing may entail blockage issues. In addition, the proximity of the test building to the wind simulator may also affect the aerodynamic data. This study focuses on the Computational Fluid Dynamics (CFD) assessment of the effects on the quality of the aerodynamic data of (i) blockage due to model buildings of various sizes and (ii) wind simulator proximity for various distances between the wind simulator and the test building. The test buildings were assumed to have simple parallelepiped shapes. The computer simulations were performed under both finite WoW wind-field conditions and in an extended Atmospheric Boundary Layer (ABL) wind flow. Mean pressure coefficients for the roof and the windward and leeward walls served as measures of the blockage and wind simulator proximity effects. The study uses the commercial software FLUENT with Reynolds Averaged Navier Stokes equations and a Renormalization Group (RNG) k-${\varepsilon}$ turbulence model. The results indicated that for larger size test specimens (i.e. for cases where the height of test specimen is larger than one third of the wind field height) blockage correction may become necessary. The test specimen should also be placed at a distance greater than twice the height of the test specimen from the fans to reduce proximity effect.

0.18${\mu}{\textrm}{m}$이하 metal layer 사진공정에서의 overlay 보정 (Overlay correction in sub-0.18${\mu}{\textrm}{m}$ metal layer photolithography process)

  • 이미영;이홍주
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2002년도 춘계학술발표논문집
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    • pp.106-108
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    • 2002
  • 반도체 physical layout design rule이 작아짐에 따라 Proximity effect와 overlay가 Pattern 구현에 크게 영향을 미치고 있다. Metal layer와 contact의 부족한 overlay margin으로 overlay 불량이 발생하고, 감소한 space margin으로 인해 bridge와 같은 문제가 나타난다. 따라서, resolution을 향상시키고, 최소한의 overlay margin을 확보함으로써 미세 pattern의 구현을 가능하게 한다. 이를 위해 OPC와 attPSM 같은 분해능향상기술이 사용된다. 그러나 attPSM의 사용은 원하지 않는 pattern이 생성되는 sidelobe와 같은 문제가 발생한다. 따라서 serial image simulation올 통해 추출한 rule을 rule-based correction에 적용하여 sidelobe현상을 방지한다. 그리고 overlay margin 부족으로 나타나는 문제는 metal layer와 contact overlap되는 영역의 line edge를 확장하고, rule checking을 통해 최소한의 space margin을 확보하여 해결한다 따라서 overlay error를 rule-based correction을 사용하여 효과적으로 방지한다.

0.12$\mu\textrm{m}$설계규칙을 갖는 DRAM 셀 주용 레이어의 OPC 및 PSM (Study the Feasibility of Optical Lithography for critical Lyers of 0.12$\mu\textrm{m}$)

  • 박기천;오용호;임성우;고춘수;이재철
    • 한국전기전자재료학회논문지
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    • 제14권1호
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    • pp.6-11
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    • 2001
  • We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.

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Metal과 Contact Layer Patterning을 위한 규칙기반 OPC 및 ORC Approach (Rule-based OPC and ORC Approach for Metal and Contact Layer Patterning)

  • 이미영;이우희;이준하;이흥주
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2003년도 춘계학술발표논문집
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    • pp.239-242
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    • 2003
  • Scale down으로 인해 부족해진 overlay margin을 통해 충분히 확보해주고, 이와 동시에 attPSM(attenuated phase shift)의 사용으로 발생하는 side-lobe 현상을 억제하기 위한 방법으로 rule-based OPC(optical proximity correction)룰 사용하여 side-lobe만을 효과적으로 추출한 후, 그 자리에 scattering bar를 삽입하였다. 그리고 ORC(optical rule checking)를 통해 original layout과 aerial image의 EPEs(edge placement errors)를 검사하여 검증에 걸리는 시간을 감소시켰다.

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온도특성을 고려한 저압간선의 경제적인 설계기법에 관한 연구 (A Study on the Economical Design of Low-Voltae feeder Considering the temperature character)

  • 최홍규;조계술
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2002년도 학술대회논문집
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    • pp.349-354
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    • 2002
  • A size of low-voltage conductor cables is determined by the voltage drop of a system, the cable impedance and the cable ampacity based on temperature correction factor in accordance with the condition of cable installation. Therefore, the proper temperature correction factor according to the condition of cable installation should be applied to determining the cable ampacity and also the skin effect and proximity effect, along with the kind and size of conductor and the condition of cable installation, should be properly considered to analyze the proper value of resistance and the reactance of the conductors. This paper addresses the systematic design flow for determining the size of low voltage level conductor cables in calculating the temperature character where error should be minimized in comparison with the general formula and which can be applied in design work for determining the size of conductor cables.

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CO-REGISTRATION OF KOMPSAT IMAGERY AND DIGITAL MAP

  • Han, Dong-Yeob;Lee, Hyo-Seong
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2008년도 International Symposium on Remote Sensing
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    • pp.11-13
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    • 2008
  • This study proposes the method to use existing digital maps as one of the technologies to exclude individual differences that occur in the process of manually determining GCP for the geometric correction of KOMPSAT images and applying it to the images and to automate the generation of ortho-images. It is known that, in case high-resolution satellite images are corrected geometrically by using RPC, first order polynomials are generally applied as the correction formula in order to obtain good results. In this study, we matched the corresponding objects between 1:25,000 digital map and a KOMPSAT image to obtain the coefficients of the zero order polynomial and showed the differences in the pixel locations obtained through the matching. We performed proximity corrections using the Boolean operation between the point data of the surface linear objects and the point data of the edge objects of the image. The surface linear objects are road, water, building from topographic map.

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SAR Despeckling with Boundary Correction

  • Lee, Sang-Hoon
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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    • pp.270-273
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    • 2007
  • In this paper, a SAR-despeck1ing approach of adaptive iteration based a Bayesian model using the lognormal distribution for image intensity and a Gibbs random field (GRF) for image texture is proposed for noise removal of the images that are corrupted by multiplicative speckle noise. When the image intensity is logarithmically transformed, the speckle noise is approximately Gaussian additive noise, and it tends to a normal probability much faster than the intensity distribution. The MRF is incorporated into digital image analysis by viewing pixel types as states of molecules in a lattice-like physical system. The iterative approach based on MRF is very effective for the inner areas of regions in the observed scene, but may result in yielding false reconstruction around the boundaries due to using wrong information of adjacent regions with different characteristics. The proposed method suggests an adaptive approach using variable parameters depending on the location of reconstructed area, that is, how near to the boundary. The proximity of boundary is estimated by the statistics based on edge value, standard deviation, entropy, and the 4th moment of intensity distribution.

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SRAF를 적용한 극자외선 노광기술용 위상 변위 마스크의 반사도에 따른 이미징 특성 연구 (Evaluation of Imaging Performance of Phase Shift Mask Depending on Reflectivity with Sub-resolution Assist Feature in EUV Lithography)

  • 장용주;김정식;홍성철;조한구;안진호
    • 반도체디스플레이기술학회지
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    • 제14권3호
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    • pp.1-5
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    • 2015
  • In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by $PROLITH^{TM}$. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.