• Title/Summary/Keyword: protective film

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The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Nano-Mechanical and Tribological Characteristics of Ultra-Thin Amorphous Carbon Film Investigated by AFM

  • Chung, Koo-Hyun;Lee, Jae-Won;Kim, Dae-Eun
    • Journal of Mechanical Science and Technology
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    • v.18 no.10
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    • pp.1772-1781
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    • 2004
  • The mechanical as well as tribological characteristics of coating films as thin as a few nm become more crucial as applications in micro-systems grow. Especially, the amorphous carbon film has a potential to be used as a protective layer for micro-systems. In this work, quantitative evaluation of nano-indentation, scratching, and wear tests were performed on the 7nm thick amorphous carbon film using an Atomic Force Microscope (AFM). It was shown that AFM-based nano-indentation using a diamond coated tip can be feasibly utilized for mechanical characterization of ultra-thin films. Also, it was found that the critical load where the failure of the carbon film occurred was about 18${\mu}$N by the ramp load scratch test. Finally, the wear experimental results showed that the quantitative wear rate of the carbon film ranged 10$\^$-9/~10$\^$-8/ ㎣ /N cycle. These experimental methods can be effectively utilized for a better understanding the mechanical and tribological characteristics at the nano-scale.

Thick Film Type duster in Mg2SiO4/Glass composite ceramics for Anion Generation (Mg2SiO4/Glass Composite계 세라믹스를 이용한 음이온 발생용 후막형 클러스터)

  • Yeo, Dong-Hun;Shin, Hyo-Soon;Hong, Youn-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.118-123
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    • 2010
  • The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

The Effect of Grain Size and Film Thickness on the Thermal Expansion Coefficient of Copper and Silver Thin Films (구리와 은 박막의 열팽창계수에 미치는 결정립 크기와 박막 두께의 영향)

  • Hwang, Seulgi;Kim, Youngman
    • Korean Journal of Metals and Materials
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    • v.48 no.12
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    • pp.1064-1069
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    • 2010
  • Thin films have been used in a large variety of technological applications such as solar cells, optical memories, photolithographic masks, protective coatings, and electronic contacts. If thin films experience frequent temperature changes, thermal stresses are generated due to the difference in the coefficient of thermal expansion between the film and substrate. Thermal stresses may lead to damage or deformation in thin film used in electronic devices and micro-machined structures. Thus, knowledge of the thermomechanical properties of thin films, such as the coefficient of thermal expansion, is an important issue in determining the stability and reliability of the thin film devices. In this study, thermal cycling of Cu and Ag thin films with various microstructures was employed to assess the coefficient of thermal expansion of the films. The result revealed that the coefficient of thermal expansion (CTE) of the Cu and Ag thin films increased with an increasing grain size. However, the effect of film thickness on the CTE did not show a remarkable difference.

Surface and Physical Properties of Polymer Insulator Coated with Diamond-Like Carbon Thin Film (DLC 박막이 코팅된 폴리머 애자의 표면 및 물리적 특성)

  • Kim, Young Gon;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.16-20
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    • 2021
  • In this study, we tried finding new materials to improve the stain resistance properties of polymer insulating materials. Using the filtered vacuum arc source (FVAS) with a graphite target source, DLC thin films were deposited on silicon and polymer insulator substrates depending on their thickness to confirm the surface properties, physical properties, and structural properties of the thin films. Subsequently, the possibility of using a DLC thin film as a protective coating material for polymer insulators was confirmed. DLC thin films manufactured in accordance with the thickness of various thin films exhibited a very smooth and uniform surface. As the thin film thickness increased, the surface roughness value decreased and the contact angle value increased. In addition, the elastic modulus and hardness of the DLC thin film slightly increased, and the maximum values of elastic modulus and hardness were 214.5 GPa and 19.8 GPa, respectively. In addition, the DLC thin film showed a very low leakage current value, thereby exhibiting electrical insulation properties.

Surface Electrical Conductivity and Growth Behavior of Aluminum 3003 Oxide Film (알루미늄 3003 산화피막 성장 거동에 의한 표면 절연 특성 관찰)

  • Subin, Park;Chanyoung, Jeong
    • Corrosion Science and Technology
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    • v.21 no.6
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    • pp.487-494
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    • 2022
  • Anodizing is a typical electrochemical surface treatment method that can improve the corrosion and insulating properties of aluminum alloys. The anodization process can obtain a dense structure. It can be used to artificially grow the thickness of an anodization film. Aluminum 3003 alloy used in this study is the most commonly used alloy for batteries due to its high strength and excellent formability as well as its weldability and corrosion resistance. Aluminum 3003 alloy was anodized at 0 ℃ with 0.3 M oxalic acid at 20 V, 40 V, or 60 V for 1 hour, 6 hours, or 12 hours. As a result of analyzing the composition of each specimen with an Energy Dispersive Spectrometer (EDS), aluminum was converted into an oxide film. The thickness of the formed anodization film increased when the applied voltage and anodization time increased. High corrosion potential values and low corrosion current density values were observed for the thickest oxide layer. The anodization film formed by anodization acted as a protective layer. The electrical resistance increased as the applied voltage and anodization time increased.

Nanostructured PVdF-HFP/TiO2 Composite as Protective Layer on Lithium Metal Battery Anode with Enhanced Electrochemical Performance (PVdF-HFP/TiO2 나노복합체 보호층을 통한 리튬금속전지 음극의 전기화학적 성능 향상)

  • Lee, Sanghyun;Choi, Sang-Seok;Kim, Dong-Eun;Hyun, Jun-Heock;Park, Young-Wook;Yu, Jin-Seong;Jeon, So-Yoon;Park, Joongwon;Shin, Weon Ho;Sohn, Hiesang
    • Membrane Journal
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    • v.31 no.6
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    • pp.417-425
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    • 2021
  • As the demand for high-capacity batteries increases, there has been growing researches on the lithium metal anode with a capacity (3,860 mAh/g) of higher than that of conventional one and a low electrochemical potential (-3.040 V). In this study, using the anatase phased TiO2 nanoparticles synthesized by hydrothermal synthesis, a PVdF-HFP/TiO2 organic/inorganic composite material was designed and used as an interfacial protective layer for a Li metal anode. As-formed organic/inorganic-lithium composite thin film was confirmed through the crystalline structure and morphological analyses. In addition, the electrochemical test (cycle stability and voltage profile) confirmed that the protective layer of PVdF-HFP/TiO2 composite (10 wt% TiO2 and 1.1 ㎛ film thickness) contributed to the enhanced electrochemical performance of the lithium metal anode (Colombic efficiency retention: 90% for 77 cycles). Based on comparative test with the untreated lithium electrode, it was confirmed that our protective layer plays an important role to stabilize/improve the EC performance of the lithium metal negative electrode.

The Electrochemical Behavior of Ni-base Metallic Glasses Containing Cr in H2SO4 Solutions

  • Arab, Sanaa.T.;Emran, Khadijah.M.;Al-Turaif, Hamad A.
    • Journal of the Korean Chemical Society
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    • v.56 no.4
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    • pp.448-458
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    • 2012
  • In order to develop alloy resistance in aggressive sulphat ion, the corrosion behavior of metallic glasses $Ni_{92{\cdot}3}Si_{4.5}B_{32}$, $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ (at %) at different concentrations of $H_2SO_4$ solutions was examined by electrochemical methods and Scanning Electron Microscope (SEM) and X-ray Photoelectron Microscopy (XPS) analyses. The corrosion kinetics and passivation behavior was studied. A direct proportion was observed between the corrosion rate and acid concentration in the case of $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloys. Critical concentration was observed in the case of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ alloy. The influence of the alloying element is reflected in the increasing resistance of the protective film. XPS analysis confirms that the protection film on the $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ alloy was NiS which is less protective than that formed on Cr containing alloys. The corrosion rate of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$. alloys containing 7% and 13% Cr are $7.90-26.1{\times}10^{-3}$ mm/y which is lower about 43-54 times of the alloy $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ (free of Cr). The high resistance of $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloy at the very aggressive media may due to thicker passive film of $Cr_2O_3$ which hydrated to hydrated chromium oxyhydroxide.

A Study on the MgO Protective Layer Deposited by Oxygen-Neutral-Beam-Assisted Deposition in AC PDP (산소 중성빔으로 보조증착된 MgO 보호막을 갖는 AC PDP의 특성에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.96-101
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    • 2008
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).

Study on Surface Characteristics of Fe Doped MgO Protective Layer (Fe가 첨가된 MgO 보호막의 표면특성 개선에 관한 연구)

  • Lee, Don-Kyu;Park, Cha-Soo;Kim, Kwong-Toe;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.2
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    • pp.106-112
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    • 2010
  • In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.