• Title/Summary/Keyword: protection switching

Search Result 162, Processing Time 0.04 seconds

Current Source ZCS PFM DC-DC Converter for Magnetron Power Supply

  • Kwon, Soon-Kurl
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.23 no.7
    • /
    • pp.20-28
    • /
    • 2009
  • This paper presents the design of zero current switching ZCS pulse frequency modulation type DC-DC converter for magnetron power supply. A magnetron serving as the microwave source in a microwave oven is driven by a switch mode power supply (SMPS). SMPSs have the advantages of improved efficiency, reduced size and weight, regulation and the ability to operate directly from the converter DC bus. The demands of the load system and the design of the power supply required to produce constant power at 4[kV]. A magnetron power supply requires the ability to limit the load current under short circuit conditions. The current source series resonant converter is a circuit configuration which can achieve this. The main features of the proposed converter are an inherent protection against a short circuit at the output, a high voltage gain and zero current switching over a large range of output power. These characteristics make it a viable choice for the implementation of a high voltage magnetron power supply.

Development of a Topology for the Power Supply with Reduced Conduction Loss and Swithing Stress (도전손실과 스위칭 스트레스 저감한 전원장치 토폴로지의 개발)

  • 라병훈;권순걸;이현우
    • Proceedings of the IEEK Conference
    • /
    • 2001.06e
    • /
    • pp.245-248
    • /
    • 2001
  • This paper is indicating the problems, which are the conduction loss on the high frequency transformer, the protection of rectification diode as the snubber loss and the stress of switching main devices, as be made high current and high speed in the phase-shift switching full-bridge DC-DC converter is used the power supply’s main circuit of high capacity. To improve those problems, in this paper, it is proposed that is the resonant circuit auxiliary can be reduced conduction losses and stabilized output control. And, it is constructed prototype of the power supply as the result of computer simulations.

  • PDF

A New Fault Protection Circuit of 600V PT-IGBT for the Improved Avalanche Energy Employing the Floating p-well (Floating P-well을 이용하여 Avalanche 에너지를 개선하기 위한 600 볼트급 IGBT의 새로운 보호 회로)

  • Lim, Ji-Yong;Ji, In-Hwan;Choi, Young-Hwan;Han, Min-Koo
    • Proceedings of the KIEE Conference
    • /
    • 2005.07c
    • /
    • pp.1847-1849
    • /
    • 2005
  • Unclamped Inductive Switching (UIS) 능력을 향상시키기 위하여 Floating p- well을 적용한 IGBT의 단락 회로 상태에서 과전압을 감지하는 새로운 보호회로를 제안하고 제작하였다. 실험 결과 제안된 회로는 fault 상황에서 fault 신호를 감지하고 즉시 게이트 전압을 낮추어 컬렉터 전류를 감소시켰다. 또한 Hard Switching Fault (HSF)와 Fault Under Load (FUL) 상황에서의 측정 및 2차원 Mixed-Mode 시뮬레이션을 통해 제안된 회로와 소자의 동작을 확인하였다.

  • PDF

Clinical Apply of Dual Energy CT (kVp switching) : A Novel Approach for MAR(Metal Artifact Reduction) Method (듀얼에너지 CT(kvp switching)의 임상 적용: MAR(Metal Artifact Reduction) 알고리즘의 적용)

  • Kim, Myeong-Seong;Jeong, Jong-Seong;Kim, Myeong-Goo
    • Journal of Radiation Protection and Research
    • /
    • v.36 no.2
    • /
    • pp.79-85
    • /
    • 2011
  • OThe purpose of this article was to measure and compare the value of the metal artifact reduction (MAR) algorithm by Dual energy(kVp switching) CT (Computed Tomography) for non using MAR and we introduced new variable Dual energy CT applications through a clinical scan. The used equipment was GE Discovery 750HD with Dual-Energy system(kVp switching). CT scan was performed on the neck and abdomen area subject for patients. Studies were from Dec 20 2010 to Feb 10 2011 and included 25 subject patients with prosthesis. We were measured the HU (Hounsfield Unit) and noise value at metal artifact appear(focal loss of signal and white streak artifact area) according to the using MAR algorithm. Statistical analyses were performed using the paired sample t-test. In patient subject case, the statistical difference of showing HU was p=0.01 and p=0.04 respectively. At maximum black hole artifact area and white streak artifact area according to the using MAR algorithm. However noise was p=0.05 and p=0.04 respectively; and not the affected black hole and white streak artifact area. Dual Energy CT with the MAR algorithm technique is useful reduce metal artifacts and could improve the diagnostic value in the diagnostic image evaluation of metallic implants area.

A study on the design automation for isolated DC-DC converters (절연형 DC-DC 컨버터의 설계 자동화에 관한 연구)

  • Kim, Ju-Il;Kim, Jong-Tae
    • Proceedings of the KIEE Conference
    • /
    • 1997.07f
    • /
    • pp.2207-2209
    • /
    • 1997
  • This Paper Presents the design automation for isolated DC-DC converters. Isolated DC-DC converts have many advantages such as protection, wide range variation, and multiple output. Prosedures consist of several steps. There are the selection of converter topology, the selection of switching devices. the calculation for the value of inductances and capacitances, and the design of transformers. We verified it with many practical examples from databooks.

  • PDF

A Study on the Electronic Ballast for Neon Lamp (네온 램프용 전자식 안정기에 관한 연구)

  • 강범석;김희준
    • Proceedings of the KIPE Conference
    • /
    • 1998.07a
    • /
    • pp.314-318
    • /
    • 1998
  • This paper discusses the development of electronic ballast for neon lamp as an application of a zero voltage switching high frequency inverter. Abnormal increase of secondary voltage due to grounded fault or partial damage of serial arranged loads is clarified and the protection circuit for this abnormal voltage increase is proposed. Also stable lighting condition for removing the unstable characteristics due to different load conditions is proposed.

  • PDF

Study on Design of 60 V TDMOSFET for Protection Circuit Module (Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구)

  • Lee, Hyun-Woong;Jung, Eun-Sik;Oh, Reum;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.5
    • /
    • pp.340-344
    • /
    • 2012
  • Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

The Development of the High-efficiency Rectifier on Marine Metallic Structures(II) (해양금속구조물의 전기방식을 위한 고효율 정류기 개발(II))

  • Ha, Tae-Hyun;Bae, Jeong-Hyo;Kim, Dae-Kyeong;Lee, Hyun-Goo;Choi, Sang-Bong;Jeong, Seong-Hwan
    • Proceedings of the KIEE Conference
    • /
    • 2000.11d
    • /
    • pp.727-728
    • /
    • 2000
  • The Cathodic Protection system which is usually applied to marine metallic structures in domestic is Sacrificial Anode Method. In general. low efficiency rectifiers are using in the field of Cathodic Protection. These rectifiers are not only low efficiency but also manual type which is not able to control remotely. In this paper we describe the high efficiency rectifier used the high speed switching method for optimum corrosion control of marine metallic structures.

  • PDF

Design and Fabrication of Wide-band Transient Voltage Blocking Device (광대역 과도전압 차단장치의 설계 및 제작)

  • 송재용;이종혁;길경석
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 1999.05a
    • /
    • pp.330-334
    • /
    • 1999
  • This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

  • PDF

High Efficiency Buck-Converter with Short Circuit Protection

  • Cho, Han-Hee;Park, Kyeong-Hyeon;Cho, Sang-Woon;Koo, Yong-Seo
    • IEIE Transactions on Smart Processing and Computing
    • /
    • v.3 no.6
    • /
    • pp.425-429
    • /
    • 2014
  • This paper proposes a DC-DC Buck-Converter with DT-CMOS (Dynamic Threshold-voltage MOSFET) Switch. The proposed circuit was evaluated and compared with a CMOS switch by both the circuit and device simulations. The DT-CMOS switch reduced the output ripple and the conduction loss through a low on-resistance. Overall, the proposed circuit showed excellent performance efficiency compared to the converter with conventional CMOS switch. The proposed circuit has switching frequency of 1.2MHz, 3.3V input voltage, 2.5V output voltage, and maximum current of 100mA. In addition, this paper proposes a SCP (Short Circuit Protection) circuit to ensure reliability.