• 제목/요약/키워드: probe-based storage

검색결과 32건 처리시간 0.022초

대면적 플랫폼을 갖는 Probe-based Storage Device(PSD)용 정전형 2축 MEMS 스테이지의 설계 (Design of an Electrostatic 2-axis MEMS Stage having Large Area Platform for Probe-based Storage Devices)

  • 정일진;전종업
    • 한국공작기계학회논문집
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    • 제15권3호
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    • pp.82-90
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    • 2006
  • Recently the electrostatic 2-axis MEMS stages have been fabricated for the purpose of an application to PSD (Probe-based Storage Device). However, all of the components(platform, comb electrodes, springs, anchors, etc.) in those stages are placed in-plane so that they have low areal efficienceis, which is undesirable as data storage devices. In this paper, we present a novel structure of an electrostatic 2-axis MEMS stage that is characterized by having large area platform. for obtaining large area efficiency, the actuator part consisting of mainly comb electrodes and springs is placed right below the platform. The structure and operational principle of the MEMS stage are described, followed by a design procedure, structural and modal analyses using FEM(Finite Element Method). The areal efficiency of the MEMS stage was designed to be about 25%, which is very large compared with the conventional ones having a few percentage.

Probe-based Storage Device(PSD)용 정전형 2축 MEMS 스테이지의 설계 및 제작 (Electrostatic 2-axis MEMS Stage for an Application to Probe-based Storage Devices)

  • 백경록;전종업
    • 한국정밀공학회지
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    • 제22권11호
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    • pp.173-181
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    • 2005
  • We report on the design and fabrication of an electrostatic 2-axis MEMS stage possessing a platform with a size of $5{times}5mm^2$. The stage, as a key component, would be used in developing probe-based storage devices in the future. It was fabricated by forming numerous $5{\times}5{\mu}m^2$ etching holes in the central platform, as a result, reducing the total number of masks to 1, thereby simplifying the whole fabrication process. Experimental results show that the driving range of the stage was $32{\mu}m$ at the supplied voltage of 20V and the natural frequency was approximately 300Hz. The mechanical coupling between x- and y-motion was also measured and verified to be $25\%$.

Silicon Nitride Cantilever Array Integrated with Si Heaters and Piezoelectric Sensors for Probe-based Data Storage

  • Nam Hyo-Jin;Kim Young-Sik;Lee Caroline Sunyong;Jin Won-Hyeog;Jang Seong-Soo;Cho Il-Joo;Bu Jong-Uk
    • 정보저장시스템학회논문집
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    • 제1권1호
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    • pp.73-77
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    • 2005
  • In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

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대면적 플랫폼을 갖는 Probe-based Storage Device(PSD)용 정전형 2축 MEMS 스테이지 (Electrostatic 2-axis MEMS Stage with a Large Area Platform for Probe-based Storage Devices)

  • 정일진;전종업
    • 한국정밀공학회지
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    • 제23권9호
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    • pp.179-189
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    • 2006
  • Recently the electrostatic 2-axis MEMS stages have been fabricated f3r the purpose of an application to PSD (Probe-based Storage Device). However, all of the components (platform, comb electrodes, springs, anchors, etc.) in those stages are placed in-plane so that they have low areal efficiencies such as a few percentage, which is undesirable as data storage devices. In this paper, we present a novel structure of an electrostatic 2-axis MEMS stage that is characterized by having a large areal efficiency of about 25%. For obtaining large area efficiency, the actuator part consisting of mainly comb electrodes and springs is placed right below the platform. The structure and operational principle of the MEMS stage are described, followed by a design and analysis, the fabrication and measurement results. Experimental results show that the driving ranges of the fabricated stage along the x and y axis were 27$\mu$m, 38$\mu$m at the supplied voltages of 65V, 70V, respectively and the natural frequencies along x and y axis were 180Hz, 310Hz, respectively. The total size of the stage is about 5.9$\times$6.8mm$^2$ and the platform size is about 2.7$\times$3.6mm$^2$.

초소형 고밀도 정보저장장치를 위한 고종횡비의 팁을 갖는 정전 구동형 폴리 실리콘 프로브 어레이 개발 (Electrostatically-Driven Polysilicon Probe Array with High-Aspect-Ratio Tip for an Application to Probe-Based Data Storage)

  • 전종업;이창수;최재준;민동기;전동렬
    • 한국정밀공학회지
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    • 제23권6호
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    • pp.166-173
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    • 2006
  • In this study, a probe array has been developed for use in a data storage device that is based on scanning probe microscope (SPM) and MEMS technology. When recording data bits by poling the PZT thin layer and reading them by sensing its piezoresponse, commercial probes of which the tip heights are typically shorter than $3{\mu}m$ raise a problem due to the electrostatic forces occurring between the probe body and the bottom electrode of a medium. In order to reduce this undesirable effect, a poly-silicon probe with a high aspect-ratio tip was fabricated using a molding technique. Poly-silicon probes fabricated by the molding technique have several features. The tip can be protected during the subsequent fabrication processes and have a high aspect ratio. The tip radius can be as small as 15 nm because sharpening oxidation process is allowed. To drive the probe, electrostatic actuation mechanism was employed since the fabrication process and driving/sensing circuit is very simple. The natural frequency and DC sensitivity of a fabricated probe were measured to be 18.75 kHz and 16.7 nm/V, respectively. The step response characteristic was investigated as well. Overshoot behavior in the probe movement was hardly observed because of large squeeze film air damping forces. Therefore, the probe fabricated in this study is considered to be very useful in probe-based data storages since it can stably approach toward the medium and be more robust against external shock.

탐침형 정보저장장치용 이차원 구동기의 내진 구조 (Design of X-Y Actuator with High Vibration Resistance lot Probe-based Data Storages)

  • 이경일;김성현;조진우;최영진;신진국
    • 정보저장시스템학회:학술대회논문집
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    • 정보저장시스템학회 2005년도 추계학술대회 논문집
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    • pp.195-196
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    • 2005
  • We report the new design of a miniature electromagnetic actuator for probe-based data storage with anti-vibration mechanism. The actuator consists of a media substrate, silicon frame, 2 pairs of magnets, a spacer, and a printed circuit board (PCB). The total area of the device is $11.2{\times}11.2 mm^2$ while the data recording area is $7.4{\times}7.4 mm^2$. A net momentum fee structure was included for high vibration resistance. The simulation shows that the lateral vibration can be reduced to below 100 nm for 1 G acceleration if the counter mass is adjusted with $1\%$ difference. The peak power for ${\pm}50 {\mu}m$ displacement is below 50 mW for a actuator with a resonance at 200 Hz.

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탐침형 정보저장 기술을 위한 실리콘 탐침의 나노 마멸 특성에 관한 연구 (Nano-wear Characteristics of Silicon Probe Tip for Probe Based Data Storage Technology)

  • 이용하;정구현;김대은;유진규;홍승범
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.552-555
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    • 2004
  • The reliability issue of the probe tip/recording media interface is one of the most crucial concerns in the Atomic Force Microscope (AFM)-based recording technology. In this work, the tribological characteristics of the probe/media interface were investigated by performing wear tests using an AFM. The ranges of applied normal load and sliding velocity for the wear test were 10 to 50nN and 2 to 20$\mu$m/s respectively. The damage of the probe tip was quantitatively as well as qualitatively characterized by Field Emission Scanning Probe Microscope (FESEM) analysis and calculated based on Archard s wear equation. It was shown that the wear coefficient of the probe tip was in the order of 10$^{-4}$ ~ 10$^{-3}$ , and significant contamination at the end of the probe tip was observed. Thus in order to implement the AFM-based recording technology, tribological optimization of the probe/media interface must be achieved.

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Thermopiezoelectric Cantilever for Probe-Based Data Storage System

  • Jang, Seong-Soo;Jin, Won-Hyeog;Kim, Young-Sik;Cho, Il-Joo;Lee, Dae-Sung;Nam, Hyo-Jin;Bu, Jong. U.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권4호
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    • pp.293-298
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    • 2006
  • Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

웨이퍼 본딩을 이용한 탐침형 정보 저장장치용 열-압전 켄틸레버 어레이 (Thermo-piezoelectric $Si_3N_4$ cantilever array on n CMOS circuit for probe-based data storage using wafer-level transfer method)

  • 김영식;장성수;이선영;진원혁;조일주;남효진;부종욱
    • 정보저장시스템학회:학술대회논문집
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    • 정보저장시스템학회 2005년도 추계학술대회 논문집
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    • pp.22-25
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    • 2005
  • In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

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실리콘 공정 및 동 도금 기술을 이용한 탐침형 정보저장장치의 전자기력 미디어 구동기 제작 (Development of an Electromagnetic Actuator for Probe-based Data using Si Storage by Process and Cu Electroplating)

  • 조진우;이경일;김성현;최영진
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권4호
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    • pp.225-230
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    • 2004
  • An electromagnetic actuator has been designed and fabricated for Probe-based data storage applications. The actuator consists of permanent magnets(SmCo) housing and a media Platform which is connected to the Si frame by four couples of Si leaf springs. In order to generate electromagnetic force, Cu coils were electroplated under the media platform. The magnetic field distribution was calculated with 3D Finite Element Method of Maxwell 3D program. The field strength felt by Cu coils was estimated to be about 0.33T when the distance between the media platform and permanent magnets is $200\mu\textrm{m}$. The static and dynamic motions of the actuator were analyzed by FEM method with ANSYS 5.3. The measured displacements of the actuator were about $\pm$$92\mu\textrm{m}$ for input current of $\pm$40㎃ and the resonance frequency was 100Hz. The proposed electromagnetic actuator can be utilized for media driver of probe-based data storage system.