Browse > Article

Electrostatically-Driven Polysilicon Probe Array with High-Aspect-Ratio Tip for an Application to Probe-Based Data Storage  

Jeon Jong-Up (울산대학교 기계자동차공학부)
Lee Chang-Soo (삼성종합기술원)
Choi Jae-Joon (삼성종합기술원)
Min Dong-Ki (삼성종합기술원)
Jeon Dong-Ryeol (명지대학교 물리학과)
Publication Information
Abstract
In this study, a probe array has been developed for use in a data storage device that is based on scanning probe microscope (SPM) and MEMS technology. When recording data bits by poling the PZT thin layer and reading them by sensing its piezoresponse, commercial probes of which the tip heights are typically shorter than $3{\mu}m$ raise a problem due to the electrostatic forces occurring between the probe body and the bottom electrode of a medium. In order to reduce this undesirable effect, a poly-silicon probe with a high aspect-ratio tip was fabricated using a molding technique. Poly-silicon probes fabricated by the molding technique have several features. The tip can be protected during the subsequent fabrication processes and have a high aspect ratio. The tip radius can be as small as 15 nm because sharpening oxidation process is allowed. To drive the probe, electrostatic actuation mechanism was employed since the fabrication process and driving/sensing circuit is very simple. The natural frequency and DC sensitivity of a fabricated probe were measured to be 18.75 kHz and 16.7 nm/V, respectively. The step response characteristic was investigated as well. Overshoot behavior in the probe movement was hardly observed because of large squeeze film air damping forces. Therefore, the probe fabricated in this study is considered to be very useful in probe-based data storages since it can stably approach toward the medium and be more robust against external shock.
Keywords
Scanning probe microscope; Data storage; Polysilicon probe; Molding; High-aspect-ratio tip;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Vettiger, P., Brugger, J., Despont, M., Drechsler, U., Duig, U., Haberle, W., Lutwyche, M., Rothuizen, H., Stutz, R., Widmer, R. and Binnig, G, 'Ultrahigh Density, High-Data-Rate NEMS-Based AFM Data Storage System,' Microelectronic Eng., Vol. 46, pp. 11-17, 1999   DOI   ScienceOn
2 Itoh, T., Ohashi, T. and Suga, T., 'Noncontact Scanning Force Microscopy using a Direct-Oscillating Piezoelectric Microcantilever,' J. Vac. Sci. Technol. B, Vol. 14, No.3, pp. 1577-1581,1996   DOI   ScienceOn
3 Minne, S. C., Yaralioglu, G, Manalis, S. R., Adams, J. D., Zesch, J., Atalar, A. and Quate, C. F., 'Automated Parallel High-Speed Atomic Force Microscopy,' Appl. Phys. Lett., Vol. 72, No. 18, pp. 2340-2342, 1998   DOI   ScienceOn
4 Marcus, R. B., Ravi, T. S., Gmitter, T, Chin, K., Liu, D., Orvis, W. J., Ciarlo, D. R., Hunt, C. E. and Trujillo, J., 'Formation of Silicon Tips with <1nm Radius,' Appl. Phys. Lett. Vol. 56, No.3, pp. 236-238, 1990   DOI
5 Hong, S., Woo, J., Shin, H., Jeon, J. U., Pak, Y. E., Colla, E. L., Setter, N., Kim, E. and No, K., 'Principle of Ferroelectric Domain Imaging using Atomic Force Microscope,' J. Appl. Phys., Vol. 89, No.2, pp. 1377-1386, 2001   DOI   ScienceOn
6 Imura, R., Shintani, T., Nakamura, K. and Hosaka, S., 'Nanoscale Modification of Phase Change Materials with Near-Field Light,' Microelectronic Eng., Vol. 30, pp. 387-390, 1996   DOI   ScienceOn
7 Ma, L. P., Yang, W. J., Xue, Z. Q. and Pang, S. J., 'Data Storage with 0.7nm Recording Marks on Crystalline Organic Thin Film by a Scanning Tunneling Microscope,' Appl. Phys. Lett., Vol. 73, No. 6, pp. 850-852, 1998   DOI   ScienceOn
8 Takimoto, K., Kawade, H., Kishi, E., Yano, K., Sakai, K., Hatanaka, K., Eguchi, K. and Nakagiri, T., 'Switching and Memory Phenomena in LangmuirBlodgett Films with Scanning Tunneling Microscope,' Appl. Phys. Lett., Vol. 61, No. 25, pp. 3032-3034, 1992   DOI
9 Binnig, G, Despont, M., Drechsler, U., Haberle, W., Lutwyche, M., Vettiger, P., Mamin, H. J., Chui, B. W. and Kenny, T. W., 'Ultrahigh-Density Atomic Force Microscopy Data Storage with Erase Capability,' Appl. Phys. Lett., Vol. 74, No.9, pp. 1329-1331, 1999   DOI   ScienceOn
10 Sato, A. and Tsukamoto, Y., 'Nanornetre-Scale Recording and Erasing with the Scanning Tunneling Microscope,' Nature, Vol. 363, pp. 431-432, 1993   DOI   ScienceOn
11 Hidaka, T., Maruyama, T., Saitoh, M., Mikoshiba, N., Shimizu, M., Shiosaki, T., Wills, L. A., Hiskes, R., Dicarolis, S. A. and Amano, J., 'Formation and Observation of 50 nm Polarized Domains in $PbZr_{1_ x}Ti_xO_3$ Thin Film using Scanning Probe Microscope,' Appl. Phys. Lett., Vol. 68, No. 17, pp. 2358-2359, 1996   DOI
12 Barrett, R. C. and Quate, C. F., 'Charge Storage in a Nitride-Oxide-Silicon Medium by Scanning Capacitance Microscopy,' J. Appl. Phys., Vol. 70, No. 5, pp. 2725-2733, 1991   DOI
13 Lee, K., Shin, H., Moon, W. K., Jeon, J. U. and Pak, Y. E., 'Detection Mechanism of Spontaneous Polarization in Ferroelectric Thin Films using Electrostatic Force Microscopy,' Jpn. J. Appl. Phys., Vol. 38, No. 3A, pp. 264-266, 1999   DOI
14 Shin, H., Lee, K., Lim, G, Jeon, J. D., Pak, Y. E., Hong, S. and No, K., 'Formation and Observation of Ferroelectric Domains in $PbZr_{1_x}Ti_xO_3$(PZT) Thin ?Films using Atomic Force Microscopy,' Proc. 6th SPIE's Ann. Int. Symp. on Smart Structures and Materials, Switzerland, Vol. 3675, pp. 94-102, 1999