• 한국재료학회지
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• 제13권1호
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• 한국재료학회지
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• 제1권1호
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• pp.17-22
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• 1991

불순물이 주입된 실리콘 기판에 500 두께의 탄탈륨 박막을 증착한 후 실리사이드를 형성시키기 위해 아르곤 분위기에서 급속열처리(RTA)률 하였다. 형성된 $TaSi_2$와 불순물의 거동은 XRD, SEM, 4-point probe, HP4145와 SIMS로 조사하였다. 불순물의 종류에 관계없이 $TaSi_2$는 RTA 온도가 $800^{\circ}C$일때 형성되기 시작하였으며 $1000^{\circ}C$이상에서 증착된 Ta가 전부 $TaSi_2$로 상 전이가 일어났다. 또한 $TaSi_2/P^+$영역에 대한 접촉저항간은 contact size가 $0.9{\times}0.9({\mu}{m^2}$)일때 $22{\Omega}$ 낮은값을 가졌으며 이온 주입된 불순물은 RTA처리시 형성된 $TaSi_2$층으로 out-diffusion이 일어났다.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.149-154
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• 2005

궁극적으로 게이트를 저저항 복합 실리사이드로 대체하는 가능성을 확인하기 위해 70 nm 두께의 폴리실리콘 위에 각 20nm의 Ni, Co를 열증착기로 적층순서를 달리하여 poly/Ni/Co, poly/Co/Ni구조를 만들었다. 쾌속열처리기를 이용하여 실리사이드화 열처리를 40초간 $700{\~}1100^{\circ}C$ 범위에서 실시하였다. 복합 실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경으로 확인하였다. 적층순서와 관계없이 폴리실리콘으로부터 제조된 복합실리사이드는 $800^{\circ}C$ 이상부터 급격한 고저항을 보이고, 두께도 급격히 얇아졌다. 두께의 감소는 기존의 단결정에서는 없던 현상으로 폴리실리콘의 두께가 한정된 경우 금속성분의 inversion 현상이 커서 폴리실리콘이 오히려 실리사이드 상부에 위치하여 제거되기 때문이라고 생각되었고 $1000^{\circ}C$ 이상에서는 실리사이드가 형성되지 못하였다. 이러한 결과는 나노급 두께의 게이트를 저저항 실리사이드로 만 들기 위해서는 inversion과 두께감소를 고려하여야 함을 의미하였다.

• 대한약리학회지
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• 제29권1호
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• pp.149-156
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• 1993

Ethanol이 암세포 증식 속도에 미치는 직접적인 영향 검색의 일환으로 배양된 mouse myeloma cell line Sp2/0-Ag14로부터 분리한 형질막 (Sp2/0-PMV) 유동성에 미치는 ethanol의 영향을 형광분석법으로 측정하였다. 그 결과 ethanol은 Sp2/0-PMV 지질 이중층 측방확산운동의 범위와 속도를 증가시켰고 회전확산운동 범위도 증가시켰다. 특히 ethanol은 Sp2/0-PMV 지질이중층 중 내부단층 (inner monolayer)에 비하여 비교적 선택적으로 외부단층 (outer monolayer)의 회전확산운동 범위를 증가시킨다는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.409-409
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• 2013

최근, 집적 소자의 미세화에 따라 늘어난 배선 신호 지연 및 상호 간섭, 그리고 소비 전력의 증가는 초고집적 소자 성능 개선에 한계를 가져온다. 이에 따라 기존의 알루미늄(Al)/실리콘 절연 산화막은 구리(Cu)/저유전율 박막(low-k)으로 대체되고 있고, 이는 소자 성능 개선에 큰 영향을 미친다. 그러나 Cu는 Si과 low-k 내부로 확산이 빠르게 일어나 소자의 비저항을 높이고, 누설 전류를 일으키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 이러한 Cu의 확산을 막기 위하여 Ta, TaN 등과 같은 확산방지막에 대한 연구가 활발히 진행되어 왔으나, 배선 공정의 집적화와 low-k 대체에 따른 공정 및 신뢰성 문제로 인해 새로운 확산방지막의 개발이 필요하게 되었다. 이를 위해, 본 연구에서는 Cu-V 합금을 사용하여 low-k 기판 위에 확산방지막을 자가 형성 시키는 공정에 대한 연구를 진행하였다. 다양한 low-k 기판에서 열처리조건에 따른 Cu-V 합금의 특성을 확인하기 위해 4-point probe를 통한 비저항 평가와 XRD (X-ray diffraction) 분석이 이뤄졌다. 또한, TEM (transmission electron microscope)을 이용하여 $300^{\circ}C$에서 1 시간 동안 열처리를 거쳐 자가형성된 V-based interlayer가 low-k와 Cu의 계면에서 균일하게 형성된 것을 확인하였다. 형성된 V-based interlayer의 barrier 특성을 평가하고자 Cu-V합금/low-k/Si 구조와 Cu/low-k/Si 구조의 leakage current를 비교 분석하였다. Cu/low-k/Si 구조는 비교적 낮은 온도에서 leakage current가 급격히 증가하는 양상을 보였으나, Cu-V 합금/low-k/Si 구조는 $550^{\circ}C$의 thermal stress 에서도 leakage current의 변화가 거의 없었다. 이러한 결과를 바탕으로 열처리를 통해 자가형성된 V-based interlayer의 Cu/low-k 간 확산방지막으로서 가능성을 검증하였다.

• 대한치과보철학회지
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• 제27권2호
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• pp.219-248
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• 1989

The purposes of this study were to analyze the microstructural and compositional changes of metal surfaces following different conditions of preoxidizing heat treatment, to investigate the composition of metal oxides, and to evaluate the effect of preoxidation and removal of surface oxides on microstructure and diffusion profiles. The techniques of EDAX (energy-dispersive analysis of x-ray), ESCA (electron spectroscopy for chemical analysis), and EPMA (electron probe micro analysis) were used, along with SEM (scanning electron microscopy). The obtained results were as follows : 1. A surface of the specimen became rough and the amount of the metal oxides increased with increasing the heat treatment time and temperature and the partial pressure of oxygen. 2. At an air pressure of 28' vacuum, the higher the temperature and the longer the time of preoxidation, the higher Ni concentration was detected. 3. Cr concentration in the specimen heat treated with air was higher than that of with vacuum. 4. The oxides in the specimens were mainly composed of Ni and Cr oxides. On the globular growth particles, significant rises in Al concentration of Rexillium III and Ti concentration of Verabond were noted. 5. Atomic diffusion occurred at the ceramic-metal interface, furthermore the amount of the flux was increased with preoxidation heat treatment.

• 대한기계학회논문집B
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• 제25권9호
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• pp.1175-1182
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• 2001

Chemical compositions of polydisperse SiO$_2$/TiO$_2$multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. SiO$_2$/TiO$_2$multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP(titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor, flow rate of carrier gas $N_2$was fixed at 0.6lpm for TTIP, at 0.1lpm for TEOS. In-situ sampling probe was used to supply particles into DMA(differential mobility analyzer) which was calibrated with using commercial DMA(TSI, model 3071A) and classifying monodisperse multicomponent particles. Classified monodisperse particles were collected with electrophoretic collector. The distributions of composition from particles to particle were determined using EDS(energy dispersive spectrometry) coupled with TEM(transmission electron microscope). The chemical(atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the chemical(atomic) composition of SiO$_2$decreased with the height from burner surface and the composition of SiO$_2$and TiO$_2$approached to the value of 1 to 1 fat downstream. It is also found that the composition of SiO$_2$decreases as the mobility diameter of aggregate increases.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.441-446
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• 2000

Chemical compositions of monodisperse $SiO_2/TiO_2$ multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. $SiO_2/TiO_2$ multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP (titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor theoretically, flow rate of carrier gas $N_2$ was fixed at 0.61pm for TTIP, at 0.11pm for TEOS. In situ sampling probe was used to supply particles into differential mobility analyzer(DMA) which was calibrated with using commercial DMA(TSI 3071A) and classifying monodisperse multicomponent particles. Classified particles were collected with electrophoretic collector. The distributions of composition from particle to particle were determined using EDS (energy dispersive spectrometry) coupled with TEM (transmission electron microscope). The chemical (atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the atomic composition of $SiO_2$ decreased with the height from burner surface and the composition of $SiO_2$ and $TiO_2$ approached to the value of 1 to 1 in far downstream. It is also found that the composition of $SiO_2$ decreases as the mobility diameter of aggregate increases.

• 대한치과기공학회지
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• 제35권2호
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• pp.137-142
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• 2013

Purpose: This study was to observe the surface and interfacial characteristic of Zirconia by surface treatment. And it was observed the roughness and contact angle according to processing, and the interfacial properties by surface treatment on zirconia. Methods: The oxide formation and ion diffusion between core and veneer ceramic were determined by the X-ray Dot Mapping of EPMA(Electron probe micro analyzer). The roughness was measured by 3D Digital microscope and the contact angle according to processing of zirconia was observed using distilled water on the surface. Results: The surface roughness of the specimens Z04, Z12, Z15 was measured $0.67({\pm}0.03){\mu}m$, $0.50({\pm}0.12){\mu}m$, $0.35({\pm}0.09){\mu}m$, respectively. As results of contact angle test, Z04, Z12, Z15 of specimen group without binder treatment was measured $46.79({\pm}3.17)^{\circ}$, $57.47({\pm}4.83)^{\circ}$, $56.19({\pm}2.66)^{\circ}$, respectively. but, L04, L12, L15 of specimen group without binder treatment was measured $63.84({\pm}2.20)^{\circ}$, $66.08({\pm}0.16)^{\circ}$, $65.10({\pm}1.01)^{\circ}$, respectively. Average contact angle of L15 was measured $65.10({\pm}1.01)^{\circ}$. In X-ray Dot Mapping results, thickness of binder including Al element was measured that each of L04, L12, L15 were $20{\mu}m$, $15{\mu}m$, $10{\mu}m$. Conclusion: The more rough surface increases the wettability, but the sintered exclusive binder decreases the wettability.