• Ceramist
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• v.23 no.2
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• pp.132-144
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• 2020

Solid oxide fuel cell (SOFC) have attracted much attention due to clean, efficient and environmental-friendly generation of electricity for next-generation energy conversion devices. Recently, many studies have been reported on improving the performance of SOFC electrodes and electrolytes by applying atomic layer deposition (ALD) process, which has advantages of excellent film quality and conformality, and precise control of film thickness by utilizing its unique self-limiting surface reaction. ALD process with these advantages has been shown to provide functional ceramic interfaces for SOFC electrodes and electrolytes. In this article, recent examples of successful functionalization and stabilization on SOFC electrodes and electrolytes by the application of ALD process for realizing high performance SOFC cells are reported.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.383-387
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• 2023

The quartz crystal microbalance (QCM), commonly used in high vacuum deposition, becomes difficult to use when a thick film is deposited on the quartz, affecting the crystal's inherent vibration. In this study, a non-destructive optical measurement method was developed to measure the film's deposition rate during the in-situ film deposition process. By measuring the scattered laser intensity caused by the dimer in the parylene gas passing through the gas flow path, it was successfully confirmed that the ratio of the dimer in the parylene gas increases as the pyrolysis temperature decreases. Additionally, it was noted that the film's thickness and haze increase as the pyrolysis temperature decreases by confirming the characteristics of the visible parylene films. Through the research results, we aim to utilize the stable in-situ film deposition rate measurement system to control the precise film deposition rate of parylene films.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.491-495
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• 2014

We developed a compact high-precision slot-die coating machine for thin-film deposition on a flexible substrate. For smooth and precise coating, air-bearing and linear motor system were employed to minimize velocity ripple. The gap control mechanism is specially designed to have repeatability of gap between nozzle and substrate under 1 ${\mu}m$. Due to extremely precise gap control, the machine can coat thin-films down to 50 nm with $200mm{\times}100mm$ size. A thin film of Ag nano-particle ink is coated for demonstration.

• Journal of Welding and Joining
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• v.14 no.5
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• pp.87-94
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• 1996

It has been well known in GMA welding process that wire feeding speed (WFS) or deposition rate increases linealy with the increase of wire extension. In this investigation, however, such an well-known relationship was .reconsidered in terms of contact-tube to work distance (CTWD) instead of wire extension. To verify the proposed relationship between WFS and CTWD, bead-on-plate welding was performed with various CTWDs in the range of 15∼35mm under the condition of near-constant voltage and current As expected, the test results showed an excellent linear relation between WFS and CTWD. Furthermore, the value of the slope turned out to be quite similar to those of previous investigators obtained either theoretically or experimentally through the Precise measurement of electrode extension. Present result also demonstred that the increase of CTWD could be very practical measure for increaring deposition rate without any increase of heat input Depending on the tip recess the practical maximum of CTWD was appeared to be limited somewhere in 25∼30mm mainly due to the entrappment of porocity.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.75-80
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• 2015

This paper proposes a selective electrodeposition process that uses laser masking and a DC voltage. Selective electrodeposition using laser masking and a DC voltage is more efficient than that using laser masking and a pulse voltage. In other words, electrodeposition with a DC voltage allows for precise selective deposition without the limitation of the deposition region. Also, a selective electrodeposition method that uses laser masking and DC voltage can reduce the electrodeposition time. The characteristics of a copper layer deposited by laser masking and DC voltage were examined under various conditions. A selective copper layer with various micro patterns of $2{\mu}m$ thickness was successfully fabricated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.276.2-276.2
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• 2016

Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.