• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.589-590
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• 2013

The fast development of electronic devices towards wireless, portable and multi-functionality desperately needs the self-powered and low maintenance power sources. The possibility to coupling the nanogenerator to wearable and portable electronic device facilitates the self powered device with independent and self sustained power source. Nanogenerator has ability to convert the low frequency mechanical vibration to electrical energy which is utilized to drive the electronic device [1]. The self powered power source has the ability to generate the power from environment and human activity has attracted much interest because of place and time independent. The human body motion based energy harvesting has created huge impact for future self powered electronics device applications. The power generated from the human body motion is enough to operate the future electronic devices. The energy harvesting from human body motion based on triboelectric effect has simple, cost-effective method [2, 3] and meet the required power density of devices. However, its output is still insufficient to driving electronic devices in continues manner so new technology and new device architecture required to meet required power. In the present work, we have fabricated the triboelectric nanogenerator using PDMS polymer. We have studied detail about the power output of the device with respect to different polymer thickness and varied separation distance.

• Journal of international Conference on Electrical Machines and Systems
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• 제2권4호
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• pp.441-446
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• 2013

A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.131-135
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• 2009

This paper reviews the characteristics of Power MOSFET device technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits.

• Journal of Power Electronics
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• 제14권2호
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• pp.257-264
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• 2014

A novel converter-free AC LED driver that is highly resistant to the fluctuation of AC voltage is proposed in this study. By removing large passive components, such as the bulky capacitor and the large-value inductor, the integration of the driver circuit is enhanced while the driving current remains stable. The proposed circuit provides LED lamps with a driving current that can follow the sinusoid waveform to obtain a very high power factor (PF) and low total harmonic distortion (THD). The LED input current produced by this driving current is insensitive to fluctuations in the AC voltage. Users will thus not feel that LED lamps are flashing during the fluctuation. Experiment results indicate that the proposed system can obtain PF of 0.999 and THD as low as 3.3% for a five-string 6 W LED load under 220 V at 50 Hz.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.195-198
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• 2017

This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.

• 산업기술연구
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• 제24권A호
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• pp.83-90
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• 2004

Generally, electronic appliances are used on the basis of normal power source supply. The power source inevitably includes the abnormal condition, such as, sudden voltage sagging, power interrupt, and induced noises. As the electronic appliances which include micro-controller-based circuits are being increased recently, the controller circuit sometimes malfunctions by the abnormal condition of the power source. This situation causes serious problems such as hitch of electric appliance, fire and medical instrument glitch, which produces serious situations. In this paper, development of power interrupt tester which is highly suitable for an endurance test device under abnormal power source to microprocessor-based circuits is proposed 89C2051 microcontroller is performed to make power interrupt signal, and software controls peripheral hardwares and built-in functions. Experimental results of this study will offer a good application to electronic appliance maker as a test device of hardware and software debugging use.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.11-16
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• 2001

Recent publications showed that a pair of neighboring printed circuit board (PCB) windings can be used as a contactless energy transfer device. As a continued study on this area, the current paper presents the modeling, analysis, and application of the neighboring PCB windings with an emphasis on their circuit properties and device characteristics as a contactless energy transfer device. Theoretical results of the paper are confirmed with experiments on a prototype contactless energy transfer circuit that delivers 24W output power at $68\%$ efficiency through two 35mm-diameter PCB windings separated each other by 2.4mm.

• 한국초전도ㆍ저온공학회논문지
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• 제9권3호
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• pp.57-61
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• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.377-387
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• 2012

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.